DMN65D8LDW
Abstract: No abstract text available
Text: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 8Ω @ VGS = 5V 170mA 6Ω @ VGS = 10V 200mA V(BR)DSS • • • • • • • • • • 60V • • This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching
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Original
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PDF
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DMN65D8LDW
200mA
170mA
AEC-Q101
DS35500
DMN65D8LDW
|
Untitled
Abstract: No abstract text available
Text: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the
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Original
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PDF
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DMN65D8LDW
170mA
OT363
200mA
DS35500
|
Untitled
Abstract: No abstract text available
Text: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the
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Original
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PDF
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DMN65D8LDW
OT363
170mA
200mA
AEC-Q101
DS35500
|
DMN65D
Abstract: DMN65D8LDW DMN65D8LDW-7
Text: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the
|
Original
|
PDF
|
DMN65D8LDW
OT363
170mA
200mA
AEC-Q101
DS35500
DMN65D
DMN65D8LDW
DMN65D8LDW-7
|
Untitled
Abstract: No abstract text available
Text: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) Package 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching
|
Original
|
PDF
|
DMN65D8LDW
OT363
170mA
200mA
DS35500
|
Untitled
Abstract: No abstract text available
Text: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V 6Ω @ VGS = 10V • ID TA = +25°C 170mA SOT363 200mA Description This new generation MOSFET has been designed to minimize the
|
Original
|
PDF
|
DMN65D8LDW
170mA
OT363
200mA
DS35500
|
DMN65D8LDW
Abstract: No abstract text available
Text: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 8Ω @ VGS = 5V 170mA 6Ω @ VGS = 10V 200mA V(BR)DSS • • • • • • • • • • 60V • • This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching
|
Original
|
PDF
|
DMN65D8LDW
200mA
170mA
AEC-Q101
DS35500
DMN65D8LDW
|