K95 Package
Abstract: No abstract text available
Text: BAW101V HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • NEW PRODUCT • • • • • Fast Switching Speed: Maximum of 50ns High Reverse Breakdown Voltage: 325V for Single Diode or 650V for Series Connection Two Electrically Isolated Elements in a Single Compact Package
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Original
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PDF
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BAW101V
150nA
OT-563
J-STD-020
DS32178
K95 Package
|
DS321
Abstract: No abstract text available
Text: BAW101V NEW PRODUCT HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • • • • • • Fast Switching Speed: max. 50ns High Reverse Breakdown Voltage: 300V Two Electrically Isolated Elements in a Single Compact Package Low Leakage Current: 150nA at Room Temperature
|
Original
|
PDF
|
BAW101V
150nA
OT-563
J-STD-020
MIL-STD-202,
DS32178
DS321
|
K95 Package
Abstract: No abstract text available
Text: BAW101V NEW PRODUCT HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • • • • • • Fast Switching Speed: max. 50ns High Reverse Breakdown Voltage: 300V Two Electrically Isolated Elements in a Single Compact Package Low Leakage Current: 150nA at Room Temperature
|
Original
|
PDF
|
BAW101V
150nA
OT-563
J-STD-020
MIL-STD-202,
DS32178
K95 Package
|
Untitled
Abstract: No abstract text available
Text: BAW101V HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • N EW PRODU CT • • • • • Fast Switching Speed: Maximum of 50ns High Reverse Breakdown Voltage: 325V for Single Diode or 650V for Series Connection Two Electrically Isolated Elements in a Single Compact Package
|
Original
|
PDF
|
BAW101V
150nA
OT-563
DS32178
|