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    DMG3415U-13

    Abstract: "marking code" 34P sot23 marking code YW DIODE marking 34P sot23
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMG3415U AEC-Q101 DS31735 DMG3415U-13 "marking code" 34P sot23 marking code YW DIODE marking 34P sot23

    "marking code" 34P sot23

    Abstract: marking 34P sot23
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V Features • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMG3415U AEC-Q101 DS31735 "marking code" 34P sot23 marking 34P sot23

    marking 34P sot 23

    Abstract: DMG3415U "marking code" 34P sot23 dmg3415u-7 J-STD-020D marking code 34P
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 42.5mΩ @ VGS = -4.5V • 53mΩ @ VGS = -2.5V • 71mΩ @ VGS = -1.8V


    Original     		PDF DMG3415U AEC-Q101 OT-23 J-STD-020D DS31735 marking 34P sot 23 DMG3415U "marking code" 34P sot23 dmg3415u-7 J-STD-020D marking code 34P

    Untitled

    Abstract: No abstract text available
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMG3415U DS31735

    DMG3415UQ-7

    Abstract: DMG3415U-7 DS31735 marking 34P sot23
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMG3415U AEC-Q101 DS31735 621-DMG3415U-7 DMG3415U-7 DMG3415UQ-7 DMG3415U-7 marking 34P sot23

    DMG3415U

    Abstract: marking 34P sot 23 dmg3415u-7 YM 294 J-STD-020D
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 39mΩ @ VGS = -4.5V • 52mΩ @ VGS = -2.5V • 65mΩ @ VGS = -1.8V


    Original     		PDF DMG3415U AEC-Q101 OT-23 J-STD-020D DS31735 DMG3415U marking 34P sot 23 dmg3415u-7 YM 294 J-STD-020D

    Untitled

    Abstract: No abstract text available
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS R DS(on) max -20V 42.5mΩ @ V GS = -4.5V 71mΩ @ V GS = -1.8V ID T A = +25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (R DS(ON) ) and yet maintain superior switching


    Original     		PDF DMG3415U AEC-Q101 DS31735

    Untitled

    Abstract: No abstract text available
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V ID TA = +25°C -4.0A -2.0A Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage


    Original     		PDF DMG3415U AEC-Q101 DS31735

    marking 34P sot23

    Abstract: No abstract text available
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMG3415U AEC-Q101 DS31735 marking 34P sot23

    Untitled

    Abstract: No abstract text available
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMG3415U AEC-Q101 DS31735