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    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGN USE FZT688B DNLS412E LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Features •        Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 57.5m at 4A High DC Current Gain hFE > 400 at IC = 3A


    Original     		PDF FZT688B DNLS412E DPLS315E) OT-223 DS31324

    n412

    Abstract: A1 marking code J-STD-020D DPLS31
    Text: DNLS412E LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW EW PR P R ODUC ODUCT T Features • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 57.5mΩ at 4A


    Original     		PDF DNLS412E DPLS315E) OT-223 DS31324 n412 A1 marking code J-STD-020D DPLS31

    Untitled

    Abstract: No abstract text available
    Text: DNLS412E LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 57.5mΩ at 4A High DC Current Gain hFE > 400 at IC = 3A Complementary PNP Type Available (DPLS315E)


    Original     		PDF DNLS412E DPLS315E) OT-223 DS31324