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    transistor marking k7A

    Abstract: 2N7002-01
    Text: 2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D TOP VIEW G Mechanical Data · · · ·


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    PDF 2N7002-01 OT-23 OT-23, MIL-STD-202, DS30026 500mA transistor marking k7A 2N7002-01

    3 lead led bicolor common anode

    Abstract: MV6361A MV6461A MV6661A T-100
    Text: BICOLOR T-100 3 mm SOLID STATE LED LAMPS PACKAGE DIMENSIONS 0.122 (3.1) 0.106 (2.7) HER / AlGaAs RED MV6661A GREEN / AlGaAs RED MV6461A YELLOW / AlGaAs RED MV6361A Ø0.137 (3.48) Ø0.113 (2.88) CL 0.047 (1.2) 0.032 (0.8) 0.189 (4.8) 0.165 (4.2) 0.059 (1.5)


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    PDF T-100 MV6661A MV6461A MV6361A MV6X61A DS300261 3 lead led bicolor common anode MV6361A MV6461A MV6661A T-100

    L2998

    Abstract: LP2955 LP2998 M08A SSTL-18
    Text: ご注意:この日本語データシートは参考資料として提供しており内容が最新でない 場合があります。製品のご検討およびご採用に際しては、必ず最新の英文デー タシートをご確認ください。


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    PDF LP2998 SSTL-2SSTL-18 LP2998 SSTL-18 DS300269-02-JP L2998 LP2955 M08A SSTL-18

    2N7002-01

    Abstract: 2N7002 k7a transistor
    Text: 2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10


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    PDF 2N7002-01 OT-23 OT-23, MIL-STD-202, DS30026 500mA 2N7002-01 2N7002 k7a transistor

    CNY17F3

    Abstract: MOC8102 moc8103 moc8101 Quarz 4 MHz CNY17F-1 CNY17F-2 CNY17F-X MOC8105 MOC8106
    Text: 6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS NO BASE CONNECTION MOC8101 MOC8105 CNY17F-1 MOC8102 MOC8106 CNY17F-2 MOC8103 MOC8107 CNY17F-3 MOC8104 MOC8108 CNY17F-4 FEATURES The MOC810X and CNY17F-X devices consist of a gallium arsenide LED optically coupled


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    PDF MOC8101 MOC8105 CNY17F-1 MOC8102 MOC8106 CNY17F-2 MOC8103 MOC8107 CNY17F-3 MOC8104 CNY17F3 MOC8102 moc8103 moc8101 Quarz 4 MHz CNY17F-1 CNY17F-2 CNY17F-X MOC8105 MOC8106

    33SD

    Abstract: CNY17F-3 CNY17F Fairchild
    Text: 6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS NO BASE CONNECTION MOC8101 MOC8105 CNY17F-1 MOC8102 MOC8106 CNY17F-2 MOC8103 MOC8107 CNY17F-3 MOC8104 MOC8108 CNY17F-4 FEATURES The MOC810X and CNY17F-X devices consist of a gallium arsenide LED optically coupled


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    PDF MOC8101 MOC8105 CNY17F-1 MOC810X CNY17F-X MOC8102 MOC8106 CNY17F-2 MOC8103 33SD CNY17F-3 CNY17F Fairchild

    L2998

    Abstract: LP2955 LP2998 M08A SSTL-18 SSTL-2 LP2998 psop
    Text: ご注意:この日本語データシートは参考資料として提供しており内容が最新でない 場合があります。製品のご検討およびご採用に際しては、必ず最新の英文デー タシートをご確認ください。


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    PDF LP2998 SSTL-2SSTL-18 LP2998 SSTL-18 DS300269-02-JP L2998 LP2955 M08A SSTL-18 SSTL-2 LP2998 psop

    CNY17F Fairchild

    Abstract: No abstract text available
    Text: 6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS NO BASE CONNECTION MOC8101 MOC8105 CNY17F-1 MOC8102 MOC8106 CNY17F-2 MOC8103 MOC8107 CNY17F-3 MOC8104 MOC8108 CNY17F-4 FEATURES The MOC810X and CNY17F-X devices consist of a gallium arsenide LED optically coupled


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    PDF MOC8101 MOC8105 CNY17F-1 MOC810X CNY17F-X MOC8102 MOC8106 CNY17F-2 MOC8103 CNY17F Fairchild

    MOC8030

    Abstract: MOC8050
    Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.


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    PDF MOC8030 MOC8050 MOC8030 MOC8050 MOC8030) MOC8050) E90700 01HOUT DS300264

    MOC8204

    Abstract: OPTO MOC8204
    Text: GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION MOC8204 The MOC8204 device consists of a gallium arsenide infrared emitting diode optically coupled to a high voltage, silicon, phototransistor detector in a standard 6-pin DIP package. It is designed for high voltage applications and


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    PDF MOC8204 MOC8204 DS300269 OPTO MOC8204

    3 pin phototransistor

    Abstract: 4 pin phototransistor phototransistor 3 pin OPTO MOC8204 MOC8204
    Text: GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION MOC8204 The MOC8204 device consists of a gallium arsenide infrared emitting diode optically coupled to a high voltage, silicon, phototransistor detector in a standard 6-pin DIP package. It is designed for high voltage applications and


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    PDF MOC8204 MOC8204 3 pin phototransistor 4 pin phototransistor phototransistor 3 pin OPTO MOC8204

    UV 471

    Abstract: C04-076 D040A DS30000
    Text: PIC16LC74B-16/PTL16 8-Bit CMOS Microcontrollers with A/D Converter  1999 Microchip Technology Inc. RC7/RX/DT RD4/PSP4 RD5/PSP5 RD6/PSP6 RD7/PSP7 VSS VDD RB0/INT RB1 RB2 RB3 RC6/TX/CK RC5/SDO RC4/SDI/SDA RD3/PSP3 RD2/PSP2 RD1/PSP1 RD0/PSP0 RC3/SCK/SCL RC2/CCP1


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    PDF PIC16LC74B-16/PTL16 16MHz UV 471 C04-076 D040A DS30000

    MOC8030

    Abstract: MOC8050 darlington 300w
    Text: PHOTODARLINGTON OPTOCOUPLERS Preliminary NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.


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    PDF MOC8030 MOC8050 MOC8030 MOC8050 MOC8030) MOC8050) E90700 DS300264 darlington 300w

    Untitled

    Abstract: No abstract text available
    Text: PIC16LC74B-16/PTL16 8-Bit CMOS Microcontrollers with A/D Converter  1999 Microchip Technology Inc. RC7/RX/DT RD4/PSP4 RD5/PSP5 RD6/PSP6 RD7/PSP7 VSS VDD RB0/INT RB1 RB2 RB3 RC6/TX/CK RC5/SDO RC4/SDI/SDA RD3/PSP3 RD2/PSP2 RD1/PSP1 RD0/PSP0 RC3/SCK/SCL RC2/CCP1


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    PDF PIC16LC74B-16/PTL16 PIC16LC74B-16/PTL16 16MHz DS30026A-page

    UV 471

    Abstract: C04-076 MARKING CODE edl 71A marking DS30000
    Text: PIC16LC74B-16/PTL16 8-Bit CMOS Microcontrollers with A/D Converter  1999 Microchip Technology Inc. RC7/RX/DT RD4/PSP4 RD5/PSP5 RD6/PSP6 RD7/PSP7 VSS VDD RB0/INT RB1 RB2 RB3 RC6/TX/CK RC5/SDO RC4/SDI/SDA RD3/PSP3 RD2/PSP2 RD1/PSP1 RD0/PSP0 RC3/SCK/SCL RC2/CCP1


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    PDF PIC16LC74B-16/PTL16 16MHz D-81739 UV 471 C04-076 MARKING CODE edl 71A marking DS30000

    k7a transistor

    Abstract: transistor marking k7A
    Text: 2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 Dim Min Max A 0.37


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    PDF 2N7002-01 OT-23 OT-23, MIL-STD-202, 500mA DS30026 k7a transistor transistor marking k7A

    MOC8030

    Abstract: MOC8050
    Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.


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    PDF MOC8030 MOC8050 MOC8030 MOC8050 MOC8030) MOC8050) E90700 01lopment.

    marking j5a

    Abstract: 2N7002 VISHAY 2N7002-01 14 SOT-23 05A3S transistor marking k7A
    Text: 2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance: R d s <o n Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 -H : h“ A TOP VIEW B C A l2l , lîl Mechanical Data


    OCR Scan
    PDF 2N7002-01 OT-23, MIL-STD-202, OT-23 DS30026 2N7002-01 marking j5a 2N7002 VISHAY 14 SOT-23 05A3S transistor marking k7A

    Untitled

    Abstract: No abstract text available
    Text: M iC F S O G H I P P IC 16L C 74B -16/P T L 16 8-Bit CMOS Microcontrollers with A/D Converter PIC16LC74B-16/PTL16 Microcontroller Core Features: Pin Diagram: C\J CL _i O < O O v a OO^CLCLCLCL^Q-O xQQoiaiaiaiooii • High-performance RISC CPU • Specially tested


    OCR Scan
    PDF -16/P PIC16LC74B-16/PTL16 16MHz DS30026A-page

    k72 transistor sot 23

    Abstract: transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23
    Text: 2N7002-01 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~ *\ : h - A TOP VIEW


    OCR Scan
    PDF 2N7002-01 OT-23, MIL-STD-202, OT-23 300ns, DS30026 2N7002-01 k72 transistor sot 23 transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23

    K72 so

    Abstract: transistor s72 S72 marking transistor marking s72 marking 702 2N7002-01 k72 sot 23 TRANSISTOR S72 Transistor
    Text: 2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance: 2.5£2 Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 - H : h“ A TOP VIEW l2l , lîl Mechanical Data Case: SO T-23, Molded Plastic


    OCR Scan
    PDF 2N7002-01 OT-23 IL-STD-202, -250pA 300ns, DS30026 K72 so transistor s72 S72 marking transistor marking s72 marking 702 2N7002-01 k72 sot 23 TRANSISTOR S72 Transistor