Untitled
Abstract: No abstract text available
Text: RF7166 DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE VBATT NC 2 GPCTRL1 GND GPCTRL0 1 TX ENABLE GND VRAMP Package Style: Module 6.63mmx5.24mmx1.0mm 22 21 20 19 18 17 Features Applications 3V Dual-Band GSM/GPRS Handsets GSM900/DCS1800 Products
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RF7166
GSM900/DCS1800
63mmx5
24mmx1
GSM900/DCS1800
2002/95/EC
DS100222
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IXTF1N250
Abstract: T1N2 1N250
Text: Advance Technical Information High Voltage Power MOSFET IXTF1N250 VDSS = 2500V ID25 = 1A Ω RDS on ≤ 40Ω N-Channel Enhancement Mode (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTF1N250
500mA
1N250
12-17-09-B
IXTF1N250
T1N2
1N250
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RF3931
Abstract: EAR99 ATC800A gan1 ECE-V1HA101UP EEU-FC2A331 RF35 GRM55ER72A475KA01L RF3931PCBA-410 11j26
Text: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance - Output Power 30W at P3dB
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RF3931
EAR99
RF3931
330uF,
EEU-FC2A331
130mA
DS100222
ATC800A
gan1
ECE-V1HA101UP
EEU-FC2A331
RF35
GRM55ER72A475KA01L
RF3931PCBA-410
11j26
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage Power MOSFET VDSS = 2500V ID25 = 1A Ω RDS on ≤ 40Ω IXTF1N250 N-Channel Enhancement Mode (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR
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Original
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PDF
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IXTF1N250
500mA
1N250
12-17-09-B
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