DQ111
Abstract: DQ139 DQ131
Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply
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UGSN7004A8HHF-256
2000mil)
256MB
256MB
200pin
128MB
200-Pin
DIMM25
DQ120
DQ121
DQ111
DQ139
DQ131
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DQ111
Abstract: No abstract text available
Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]
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SM544083U74S6UU
128MByte
4Mx16
DQ111
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Untitled
Abstract: No abstract text available
Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,
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SM544028002BXGU
32MByte
32-megabyte
100-pin,
72-bit
70/80ns
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BA5 marking
Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package
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HMD4M144D9WG
64Mbyte
4Mx144)
200-pin
HMD4M144D9WG
144bit
4Mx16bit
50-pin
16bit
BA5 marking
DQ112-127
BA7 marking
DQ113
BA6 marking
BA6137
DQ99
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DQ124
Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
Text: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)
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UG016E14488HSG
200-Pin
256MB
2560mil)
DQ124
DQ77
DQ100
DQ99
DQ87
DQ88
DQ111
DQ106
DQ72
DQ79
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DQ112
Abstract: UG016C14488HSG-6 DQ100 DQ88
Text: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)
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UG016C14488HSG
200-Pin
256MB
2560mil)
DQ112
UG016C14488HSG-6
DQ100
DQ88
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Untitled
Abstract: No abstract text available
Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8
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UG08E14488HSG-6
200Pin
U08E14488HSG-6
400mil
16bit
240mil
2000mil)
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sht22
Abstract: SHT12 5BE1 EL114 6nc3 SHT20 RAM128KX8 SHT13 VG-468 57BE2
Text: 5 EBSA-110 SHEET SIG 4 Schematic PREFIXES 3 2 BAN#=EBSA-110 REV#=REVB Directory 1 - STRONGARM SHT20, C 1 - Schematic sht 2 - Block sht 3 CPU_, sht 4 - Debug sht 5 - SSRAM sht 6 BUF_, IO_ Address sht 7 MUX_, SIM_ DRAM sht 8 CTA_, CTB_ Control sht 9 CTA_, CTB_
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EBSA-110
SHT20,
ebsa110
sht22
SHT12
5BE1
EL114
6nc3
SHT20
RAM128KX8
SHT13
VG-468
57BE2
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Untitled
Abstract: No abstract text available
Text: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8
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UG016C14488HSG-6
200Pin
U016C14488HSG-6
400mil
20bit
240mil
2560mil)
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LH28F160BJHE-BTLZD
Abstract: No abstract text available
Text: LHF16JZD ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company. ●When using the products covered herein, please observe the conditions written herein and the
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LHF16JZD
LH28F160BJHE-BTLZD
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1348B Stacked Chip 16M Flash and 4M SRAM Model No.: LRS1348B Spec No.: EL127003 Issue Date: July 3, 2000 sharp L R S 13 48 B • Handle this document carefully for it contains material protected by international copyright law.
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LRS1348B
LRS1348B)
EL127003
EL127003
FUM99902
AP-001-SD-E
AP-006-PT-E
AP-007-SW-E
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ba4410
Abstract: Samsung MCP Flash Memory SAMSUNG k5 dual diode BA45 BA6511 samsung MCP K5 BA40 BA-36 BA5111 bga221
Text: K5A3x41YT B A MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (2Mx16) Dual Bank NOR Flash Memory / 4M(256Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft August 28, 2001 1.0 Final Specification
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K5A3x41YT
2Mx16)
256Kx16)
66-Ball
80x11
08MAX
ba4410
Samsung MCP
Flash Memory SAMSUNG k5
dual diode BA45
BA6511
samsung MCP K5
BA40
BA-36
BA5111
bga221
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LH28F160BJHE-BTLZD
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BJHE-BTLZD Flash Memory 16M 1M x 16 (Model No.: LHF16JZD) Spec No.: EL133046 Issue Date: Mrch 22, 2001 sharp LHF16JZD ●Handle this document carefully for it contains material protected by international copyright law.
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LH28F160BJHE-BTLZD
LHF16JZD)
EL133046
LHF16JZD
LH28F160BJHE-BTLZD
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MT18DT8144G
Abstract: No abstract text available
Text: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM
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200-pin,
128MB
192-cycle
MT18DT8144G
DQ995
MT18DT8144G
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LH28F160BJHG-TTL90
Abstract: No abstract text available
Text: Date 16M x16 Flash Memory LH28F160BJHG-TTL90 Feb. 28. 2001 LHF16JZB ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written
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LH28F160BJHG-TTL90
LHF16JZB
AP-001-SD-E
AP-006-PT-E
AP-007-SW-E
LH28F160BJHG-TTL90
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LH28F160BJD-TTL80
Abstract: LH28F160BJ
Text: Date 16M x16 Flash Memory LH28F160BJD-TTL80 Jul. 14. 2003 LHF16JZ7 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written
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LH28F160BJD-TTL80
LHF16JZ7
AP-001-SD-E
AP-006-PT-E
AP-007-SW-E
LH28F160BJD-TTL80
LH28F160BJ
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48-PIN
Abstract: LH28F160SGED-L10 TSOP048-P-1220
Text: LH28F160SGED-L10 LH28F160SGED-L10 16 M-bit 512 kB x 16 x 2-Bank SmartVoltage Dual Work Flash Memory DESCRIPTION The LH28F160SGED-L10 Dual Work flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for
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LH28F160SGED-L10
LH28F160SGED-L10
LH28F160SGEDL10
48-pin
TSOP-048-P-1220)
TSOP048-P-1220)
TSOP048-P-1220
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LH28F160BJHG-BTLZ3
Abstract: EL125
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BJHG-BTLZ3 Flash Memory 16M 1M x 16 (Model No.: LHF16JZA) Spec No.: EL125090 Issue Date: September 27, 2000 sharp LHF16JZA ●Handle this document carefully for it contains material protected by international copyright law.
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LH28F160BJHG-BTLZ3
LHF16JZA)
EL125090
LHF16JZA
LH28F160BJHG-BTLZ3
EL125
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1348B Stacked Chip 16M Flash and 4M SRAM Model No.: LRS1348B Spec No.: EL127003 Issue Date: July 3, 2000 sharp L R S 13 48 B • Handle this document carefully for it contains material protected by international copyright law.
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LRS1348B
LRS1348B)
EL127003
EL127003
FUM99902
AP-001-SD-E
AP-006-PT-E
AP-007-SW-E
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SiS301
Abstract: bt815 SILICON INTEGRATED SYSTEMS SiS300 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18
Text: SiS300 2D/3D/Video/DVD Accelerator SiS300 2D/3D/Video/DVD Accelerator Preliminary Rev. 0.3 March 23, 1999 This specification is subject to change without notice. Silicon Integrated Systems Corporation assumes no responsibility for any errors contained herein.
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SiS300
128-bit
SiS301
bt815
SILICON INTEGRATED SYSTEMS
1Mx16x4
LCD 320X200
CR10
CR14
CR16
CR18
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MAX843
Abstract: No abstract text available
Text: 19-0388; Rev 0; 4/95 V M y J X IV M Low-Noise, Regulated, -2V GaAsFET Bias The MAX840 offers both a -2V preset output and a -0.5V to -9.4V a d ju stab le output. The M AX843/M AX844 use an external positive control voltage to set the negative output voltage. Input voltage range for all the devices is
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MAX840
AX843/M
AX844
MAX843/MAX844
5B7LL51
0011B75
MAX840/MAX843/MAX844
MAX843/MAX844
001127t
MAX843
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Graphic equalizer circuit diagram
Abstract: 7-Band Graphic Equalizer Display Filter
Text: SONY. C X A 1 3 5 2 A S 2-channel 5 Elements Graphic Equalizer IC Description The CXA1352AS is a bipolar IC for graphic equalizer use. Alt controls are DC performed while the addition of single-potentiometers easily composes a 2-channel graphic equalizer.
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CXA1352AS
001157b
CXA1352AS
0D11577
CXA1352A5
QG11S7Ã
Graphic equalizer circuit diagram
7-Band Graphic Equalizer Display Filter
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Untitled
Abstract: No abstract text available
Text: Whpl H E W L E T T mLrÏÆP A C K A R D Low Cost Gigabit Rate Transmit/Receive Chip Set Technical Data HDM P-1012 T ran sm itter HDM P-1014 R eceiv er F ea tu res D escrip tio n • T ran sp aren t, E x ten d ed R ib b on Cable R ep la cem en t • Im p lem en ted in a L ow
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P-1012
P-1014
HDMP-1012
HDMP-1014
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Untitled
Abstract: No abstract text available
Text: SHARP SHARP LHF80G05 # H a n d le this docum ent carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written perm ission o f the company. # W h e n using the products covered herein, please observe the conditions written herein
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LHF80G05
TSOP48--
AA1142
LH28F800SGHEL70
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