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    Nexperia 74HC73D-Q100J

    IC FF JK TYPE DUAL 1BIT 14SO
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    DigiKey 74HC73D-Q100J Digi-Reel 9,840 1
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    74HC73D-Q100J Reel 5,000 2,500
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    Farnell 74HC73D-Q100J Reel 1,417 9 Weeks, 1 Days 100
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    74HC73D-Q100J Cut Tape 1,417 9 Weeks, 1 Days 1
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    RS 74HC73D-Q100J Reel 2,250 2,500
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    74HC73D-Q100J Package 2,250 25
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    Avnet Americas 74HC73D-Q100J Reel 8 Weeks 5,000
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    Nexperia 74HC74D-Q100,118

    IC FF D-TYPE DUAL 1BIT 14SO
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    DigiKey 74HC74D-Q100,118 Cut Tape 2,494 1
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    74HC74D-Q100,118 Digi-Reel 2,494 1
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    Avnet Silica 74HC74D-Q100,118 5,000 10 Weeks 2,500
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    Mouser Electronics 74HC74D-Q100,118 49,203
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    EBV Elektronik 74HC74D-Q100,118 7,500 10 Weeks 2,500
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    Rochester Electronics 74HC74D-Q100,118 1,685 1
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    Avnet Americas 74HC74D-Q100,118 Reel 8 Weeks 7,500
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    New Advantage Corporation 74HC74D-Q100,118 30,000 1
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    Nexperia 74AHCT123AD-Q100J

    IC MULTIVIBRATOR 5NS 16SO
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    DigiKey 74AHCT123AD-Q100J Digi-Reel 2,480 1
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    74AHCT123AD-Q100J Cut Tape 2,480 1
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    Rochester Electronics 74AHCT123AD-Q100J 120,000 1
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    Avnet Americas 74AHCT123AD-Q100J Reel 8 Weeks 7,500
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    Nexperia 74HC126D-Q100J

    IC BUFFER NON-INVERT 6V 14SO
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    DigiKey 74HC126D-Q100J Digi-Reel 2,459 1
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    74HC126D-Q100J Cut Tape 2,459 1
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    Avnet Silica 74HC126D-Q100J 7,500 10 Weeks 2,500
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    EBV Elektronik 74HC126D-Q100J 10 Weeks 2,500
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    Rochester Electronics 74HC126D-Q100J 1,880 1
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    Avnet Americas 74HC126D-Q100J Reel 8 Weeks 7,500
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    Avnet Asia 74HC126D-Q100J 12,500 8 Weeks 7,500
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    Nexperia 74AHCT30D-Q100J

    IC GATE NAND 1CH 8-INP 14SO
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    DigiKey 74AHCT30D-Q100J Digi-Reel 2,089 1
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    74AHCT30D-Q100J Cut Tape 2,089 1
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    Rochester Electronics 74AHCT30D-Q100J 70,000 1
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    DQ100 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DQ1001-7R Power-One 60...132 Watt DC-DC Converters Original PDF
    DQ1001-7R-9 Power-One DC-DC Converter: (43 to 108) V to (5.1) V Original PDF
    DQ1001-7R-9G Power-One DC-DC Converter: (43 to 108) V to (5.1) V Original PDF
    DQ1001-7RP Power-One DC-DC Converter: (43 to 108) V to (5.1) V Original PDF
    DQ1001-7RPG Power-One DC-DC Converter: (43 to 108) V to (5.1) V Original PDF
    DQ1001-9R Power-One DC DC Converters, Power Supplies - External/Internal (Off-Board), DC/DC CONVERT 5.1V 20A Original PDF
    DQ1001-9RG Bel Power Solutions Power Supplies - External/Internal (Off-Board) - DC DC Converters - DC/DC CONVERTER 5.1V 102W Original PDF

    DQ100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DQ111

    Abstract: DQ139 DQ131
    Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply


    Original
    PDF UGSN7004A8HHF-256 2000mil) 256MB 256MB 200pin 128MB 200-Pin DIMM25 DQ120 DQ121 DQ111 DQ139 DQ131

    DQ111

    Abstract: No abstract text available
    Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]


    Original
    PDF SM544083U74S6UU 128MByte 4Mx16 DQ111

    Untitled

    Abstract: No abstract text available
    Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,


    Original
    PDF SM544028002BXGU 32MByte 32-megabyte 100-pin, 72-bit 70/80ns

    BA5 marking

    Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
    Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package


    Original
    PDF HMD4M144D9WG 64Mbyte 4Mx144) 200-pin HMD4M144D9WG 144bit 4Mx16bit 50-pin 16bit BA5 marking DQ112-127 BA7 marking DQ113 BA6 marking BA6137 DQ99

    k 1358

    Abstract: 56FBGA
    Text: 32 Mbit Burst Mode Concurrent SuperFlash ComboMemory SST34WA32A3 / SST34WA32A4 / SST34WA3283 / SST34WA3284 Advance Information FEATURES: • Flash Organization: – 2M x 16 • PSRAM Organization: – 8 Mbit: 512k X 16 – 16 Mbit: 1M x 16 • Single Voltage Read and Write Operations


    Original
    PDF SST34WA32A3 SST34WA32A4 SST34WA3283 SST34WA3284 SST34WA32x3 SST34WA32x4 MO-225, 56-fbga-MVN-6x8-1 56-Ball S71358-01-000 k 1358 56FBGA

    BQ2001

    Abstract: No abstract text available
    Text: Q Series Data Sheet 66 – 132 Watt DC-DC Converters Features • RoHS lead-free-solder and lead-solder-exempted products are available • Wide input voltage ranges up to 150 VDC • 1 or 2 isolated outputs from 3.3 to 48 V • Class I equipment • Extremely high efficiency of up to 90%


    Original
    PDF BCD20011- 12-Mar-2012 BQ2001

    DQ124

    Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
    Text: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)


    Original
    PDF UG016E14488HSG 200-Pin 256MB 2560mil) DQ124 DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79

    DQ112

    Abstract: UG016C14488HSG-6 DQ100 DQ88
    Text: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)


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    PDF UG016C14488HSG 200-Pin 256MB 2560mil) DQ112 UG016C14488HSG-6 DQ100 DQ88

    Untitled

    Abstract: No abstract text available
    Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8


    Original
    PDF UG08E14488HSG-6 200Pin U08E14488HSG-6 400mil 16bit 240mil 2000mil)

    GR-1244-CORE

    Abstract: GR-253-CORE IDT82V3280 GR-1377-CORE 19.440 MHz TCXO
    Text: WAN PLL IDT82V3280 Version 2 June 19, 2006 6024 Silver Creek Valley Road, San Jose, CA 95138 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 284-2775 Printed in U.S.A. 2006 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. IDT does not assume any responsibility for use of any circuitry described other than the circuitry embodied in an IDT product. The Company makes no representations that circuitry


    Original
    PDF IDT82V3280 PN100) PNG100) DQ100) DQG100) 82V3280 GR-1244-CORE GR-253-CORE IDT82V3280 GR-1377-CORE 19.440 MHz TCXO

    48 VOLT 20AMP battery charger

    Abstract: lm1785 BP1601 ZY2105 qts48t46096 PSR53-7 HBD060ZGE-A MPB150 40IMX35D05D15-8 FXP7000-48-S
    Text: Z-One Digital Power Analog POL Isolated DC-DC Front Ends Chassis Mount PoE Ruggedized CompactPCI Renewable Energy Network Power Systems Intelligent Controls 2010 Online Product Update Table of Contents Point-Of-Load Conversion & Management Bus Programmable Digital POL Solutions


    Original
    PDF LKP5662-7R LKP5660-7R LKP5661-5R 48 VOLT 20AMP battery charger lm1785 BP1601 ZY2105 qts48t46096 PSR53-7 HBD060ZGE-A MPB150 40IMX35D05D15-8 FXP7000-48-S

    LWN2880-6

    Abstract: No abstract text available
    Text: Z-One Digital Power Analog POL Isolated DC-DC Front Ends Chassis Mount Modular Products 2010 ONLINE AC-DC & DC-DC POWER SOLUTIONS PRODUCT UPDATE PoE CompactPCI Ruggedized Table of Contents Point-Of-Load Conversion & Management Bus Programmable Digital POL Solutions


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8


    Original
    PDF UG016C14488HSG-6 200Pin U016C14488HSG-6 400mil 20bit 240mil 2560mil)

    Untitled

    Abstract: No abstract text available
    Text: WAN PLL IDT82V3285 Version March 02, 2009 6024 Silver Creek Valley Road, San Jose, CA 95138 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 284-2775 Printed in U.S.A. 2006 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. IDT does not assume any responsibility for use of any circuitry described other than the circuitry embodied in an IDT product. The Company makes no representations that circuitry


    Original
    PDF IDT82V3285 DQ100) DQG100) 82V3285

    MT18DT8144G

    Abstract: No abstract text available
    Text: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM


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    PDF 200-pin, 128MB 192-cycle MT18DT8144G DQ995 MT18DT8144G

    gqxxxx

    Abstract: uster E131905 BQ2001 CH-8610
    Text: File E131905 Vol. 15 Sec. 3 and Report Page 1 Issued: Revised: 1996-05-07 2008-04-25 DESCRIPTION PRODUCT COVERED: * USR/CNR: DC/DC Power Supply, Q Series represented by YQXXXX-WZ where Y represents letters B, C, D, E, G, or 48, X represents a number 0-9 which


    Original
    PDF E131905 BQ1101 BQ1001 BQ2320 BQ2540 BQ2660 BQ2001 CH-8610, gqxxxx uster E131905 BQ2001 CH-8610

    Q2000 dc dc converter

    Abstract: BQ2001
    Text: Q Series Data Sheet 66 - 132 Watt DC-DC Converter Features • RoHS lead-free-solder and lead-solder-exempted products are available • Wide input voltage ranges up to 150 VDC • 1 or 2 isolated outputs from 3.3 to 48 VDC • Class I equipment • Extremely high efficiency of up to 90%


    Original
    PDF 89/336/EEC BCD20011-G Q2000 dc dc converter BQ2001

    BQ2001

    Abstract: No abstract text available
    Text: Q Series Data Sheet 66 - 132 Watt DC-DC Converter Features • RoHS lead-free-solder and lead-solder-exempted products are available • Wide input voltage ranges up to 150 VDC • 1 or 2 isolated outputs from 3.3 to 48 VDC • Class I equipment • Extremely high efficiency of up to 90%


    Original
    PDF 300132lusively 89/336/EEC BCD20011-G 14-May-09 BQ2001

    smart modular

    Abstract: SMART Modular Technologies SM51441000-7 SM51441000-8
    Text: SM51441000 August 1994 Rev 1 SMART Modular Technologies SM51441000 16MByte 1M x 144 CMOS DRAM Module General Description Features The SM51441000 is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line


    Original
    PDF SM51441000 16MByte SM51441000 16-megabyte 100-pin, 72-bit 70/80ns 20/18W smart modular SMART Modular Technologies SM51441000-7 SM51441000-8

    EQ2660-9R

    Abstract: BQ2660-9R CQ2660-9R BQ2320-9R Q2000 dc dc converter BQ2540-9R BQ2001 DQ100 RIA12 BQ2001-9R
    Text: Q Series Data Sheet 66 – 132 Watt DC-DC Converter Features • RoHS lead-free-solder and lead-solder-exempted products are available • Wide input voltage ranges up to 150 VDC • 1 or 2 isolated outputs from 3.3 to 48 VDC • Class I equipment • Extremely high efficiency of up to 90%


    Original
    PDF BCD20011-G 22-Dec-09 EQ2660-9R BQ2660-9R CQ2660-9R BQ2320-9R Q2000 dc dc converter BQ2540-9R BQ2001 DQ100 RIA12 BQ2001-9R

    p720C

    Abstract: No abstract text available
    Text: WAN PLL IDT82V3280 Version 1 September 28, 2005 6024 Silver Creek Valley Road, San Jose, CA 95138 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 284-2775 Printed in U.S.A. 2005 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. IDT does not assume any responsibility for use of any circuitry described other than the circuitry embodied in an IDT product. The Company makes no representations that circuitry


    Original
    PDF IDT82V3280 its28, 82V3280 PN100) PNG100) DQ100) DQG100) p720C

    Untitled

    Abstract: No abstract text available
    Text: M IC S Q N I IIW - 1 W IH • t s em c o n o u c to r MT2D88C25632, MT4D88C5123Z 1MBr 2MB DRAM CARDS n c DRAM CARD 1, 2 MEGABYTES 256K, 512K x 32; 5.0V FAST PAGE MODE FEATURES • Low power • JEDEC-standard 88-pin DRAM card pinout • Polarized receptacle connector


    OCR Scan
    PDF MT2D88C25632, MT4D88C5123Z 88-pin MT2DMC25C32. C51232 GD11374 MT4D88C51232 MT20MC2S632.

    D4512

    Abstract: d4512844 D29D31 DQ200-V D45128
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4564EC726 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C-4564EC726 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of 128 M SDRAM: ,uPD45128441 are assembled.


    OCR Scan
    PDF MC-4564EC726 72-BIT MC-4564EC726 uPD45128441 -4564EC726EFB-A80 -4564EC726EFB-A10 D4512 d4512844 D29D31 DQ200-V D45128

    MB81C4256

    Abstract: No abstract text available
    Text: February 1990 Edition 1.0 DATA SHEET FUJITSU MB81C4256-70U-80U-10U-12L CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 256 x 4 Bits Fast Page Mode DRAM The Fujitsu M B81C4256 is a CM OS, fully decoded dynam ic RAM organized as 262,144 words x 4 bits. The MB81C4256 has been designed fo r mainframe memories,


    OCR Scan
    PDF MB81C4256-70U-80U-10U-12L B81C4256 MB81C4256 MB81C4256-70L MB81C4256-80L MB81C4256-1 MB81C4256-12L C26064S-1C