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    DN3765 Search Results

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    DN3765 Price and Stock

    Microchip Technology Inc DN3765K4-G

    MOSFET N-CH 650V 300MA TO252-3
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    DigiKey DN3765K4-G Digi-Reel 2,572 1
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    DN3765K4-G Cut Tape 2,572 1
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    DN3765K4-G Reel 2,000 2,000
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    Avnet Americas DN3765K4-G Reel 8 Weeks 2,000
    • 1 $3.29
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    Mouser Electronics DN3765K4-G 930
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    Verical DN3765K4-G 5,980 3
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    DN3765K4-G 2,000 2,000
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    Arrow Electronics DN3765K4-G Cut Strips 5,980 8 Weeks 1
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    DN3765K4-G 2,000 8 Weeks 2,000
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    Newark DN3765K4-G Cut Tape 2,000
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    DN3765K4-G Reel 2,000
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    RS DN3765K4-G Bulk 2,000 20 Weeks 1
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    Microchip Technology Inc DN3765K4-G Reel 8 Weeks
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    Onlinecomponents.com DN3765K4-G
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    NAC DN3765K4-G 2,000
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    Avnet Silica DN3765K4-G 10 Weeks 2,000
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    EBV Elektronik DN3765K4-G 9 Weeks 2,000
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    Master Electronics DN3765K4-G
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    DN3765 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DN3765 Supertex N-Channel Depletion-Mode Vertical DMOS FET Original PDF
    DN3765K4-G Supertex N-Channel Depletion-Mode Vertical DMOS FET Original PDF

    DN3765 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage


    Original     		PDF DN3765 DSFP-DN3765 A070113

    DN3765

    Abstract: No abstract text available
    Text: DN3765 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 95.3 95.3 11 ± 1.5 Au 1 (mils) DN3765 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


    Original     		PDF DN3765 DN3765 A020309

    mos fet marking k4

    Abstract: dn37 DN3765 DN3765K4-G
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		PDF DN3765 DSFP-DN3765 A103108 mos fet marking k4 dn37 DN3765 DN3765K4-G

    Untitled

    Abstract: No abstract text available
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		PDF DN3765 O-252, DSFP-DN3765 NR111207

    Untitled

    Abstract: No abstract text available
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		PDF DN3765 DSFP-DN3765 A091208

    transistor MARKING K4

    Abstract: No abstract text available
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		PDF DN3765 DSFP-DN3765 A103108 689-DN3765K4-G DN3765K4-G transistor MARKING K4

    DN3765

    Abstract: No abstract text available
    Text: Supertex inc. DN3765 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 95.3 95.3 11 ± 1.5 Au 1 (mils) DN3765 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si


    Original     		PDF DN3765 DN3765 A031610

    mos fet marking k4

    Abstract: DN3765 DN3765K4-G 2L43 transistor MARKING K4
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		PDF DN3765 O-252, DSFP-DN3765 NR101207 mos fet marking k4 DN3765 DN3765K4-G 2L43 transistor MARKING K4

    Untitled

    Abstract: No abstract text available
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of


    Original     		PDF DN3765 DSFP-DN3765 A103108

    Untitled

    Abstract: No abstract text available
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		PDF DN3765 O-252, DSFP-DN3765 NR111707

    HV9961

    Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
    Text: Supertex inc. Short Form Catalog 2011 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,


    Original     		PDF product25 HV9961 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509

    STR 6656

    Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
    Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,


    Original     		PDF

    ic str wg 252

    Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
    Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,


    Original     		PDF

    DN2450

    Abstract: K4 SOT-89 DN2470 sot-89 dual diode DN2530 DN2535 DN2540 DN2625 DN3135 DN3145
    Text: Selector Guide Depletion Mode MOSFETs BVDSX min RDS ON max (V) (Ω) DN1509 90 DN2450 Device VGS(OFF) IDSS @ VGS = 0V min max min max (V) (V) (mA) (mA) 6.0 - 1.8 - 3.5 300 - 500 10 -1.5 -3.5 700 - DN2470 700 42 - 1.5 - 3.5 500 (typ) - DN2530 300 12 - 1.0 - 3.5


    Original     		PDF DN1509 DN2450 DN2470 DN2530 DN2535 OT-89 O-252 DN2450 K4 SOT-89 DN2470 sot-89 dual diode DN2530 DN2535 DN2540 DN2625 DN3135 DN3145

    DN2470

    Abstract: 1100 SOT-89 DN2530 DN2535 DN2540 DN2625 DN3135 DN3145 DN3525 DN3535
    Text: Selector Guide Depletion Mode MOSFETs BVDSS min RDS ON max (V) (Ω) DN1509 90 DN2470 Device VGS(OFF) IDSS @ VGS = 0V Package Options Application Notes - 3-Lead SOT-89 (N8) - 500 (typ) - 3-Lead TO-252 (K4) - - 3.5 200 - 3-Lead TO-92 (N3) - 3-Lead SOT-89 (N8)


    Original     		PDF DN1509 DN2470 OT-89 O-252 DN2530 DN2535 O-220 AN-D30 DN2540 DN2470 1100 SOT-89 DN2530 DN2535 DN2540 DN2625 DN3135 DN3145 DN3525 DN3535