Untitled
Abstract: No abstract text available
Text: 976nm Butterfly Packaged Diode Laser K98S14F-3.00W Key Features： 3W output power 105µm fiber core diameter 0.22NA 976nm wavelength Applications： Laser pumping Medical use Printing Heating Material processing Marking BWT Beijing’s High Power Diode Laser Modules are manufactured by
|
Original
|
PDF
|
976nm
K98S14F-3
|
Untitled
Abstract: No abstract text available
Text: 976nm Butterfly Packaged Diode Laser K98S14F-2.00W Key Features： 2W output power 105µm fiber core diameter 0.22NA 976nm wavelength Applications： Laser pumping Medical use Printing Heating Material processing Marking BWT Beijing’s High Power Diode Laser Modules are manufactured by
|
Original
|
PDF
|
976nm
K98S14F-2
HW/bwt/915nm-980nm/k98s14f
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD800S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, % 7 28 & 1 6*" & -. * & : -9 6 * "
|
Original
|
PDF
|
DD800S33K2C
|
DD800S33K2C
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD800S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, % 7 28 & 1 6*" & -. * & : -9 6 * "
|
Original
|
PDF
|
DD800S33K2C
DD800S33K2C
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD800S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, % 7 28 & 1 6*" & -. * & : -9 6 * "
|
Original
|
PDF
|
DD800S33K2C
|
DIODE K9
Abstract: DD800S33K2C
Text: Technische Information / technical information IGBT-Module IGBT-modules DD800S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, % 7 28 & 1 6*" & -. * & : -9 6 * "
|
Original
|
PDF
|
DD800S33K2C
DIODE K9
DD800S33K2C
|
nc65
Abstract: fp25r12w2t fp25r12w2t4_b11 P2NC6
Text: Technische Information / technical information FP25R12W2T4_B11 IGBT-Module IGBT-modules EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode
|
Original
|
PDF
|
FP25R12W2T4
nc65
fp25r12w2t
fp25r12w2t4_b11
P2NC6
|
DIN 16901
Abstract: DIN ISO 2768-M DIN 16901 130 DIN 16901 140 FS450R12KE3 DIN 16901 150 5B4A
Text: Technische Information / technical information FS450R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
|
Original
|
PDF
|
FS450R12KE3
DIN 16901
DIN ISO 2768-M
DIN 16901 130
DIN 16901 140
FS450R12KE3
DIN 16901 150
5B4A
|
fs450r12ke3
Abstract: DIN 16901 130 P4E7
Text: Technische Information / technical information FS450R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
|
Original
|
PDF
|
FS450R12KE3
fs450r12ke3
DIN 16901 130
P4E7
|
LTC4098-3.6
Abstract: A20-LCD15.6 SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current
|
Original
|
PDF
|
IFS75B12N3E4
428654F4
D3265
ECFC24
B32DC
CD3289
ECFC26
B32DC6
C36B3
1231423567896AB
LTC4098-3.6
A20-LCD15.6
SXA-01GW-P0.6
|
AL6G
Abstract: No abstract text available
Text: Technische Information / technical information IFS75B12N3E4_B39 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current
|
Original
|
PDF
|
IFS75B12N3E4
AL6G
|
Untitled
Abstract: No abstract text available
Text: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such
|
Original
|
PDF
|
DK-8381
KLED0002E01
|
BB199
Abstract: nxp Standard Marking
Text: BB199 Variable capacitance diode for VCO and VCXO Rev. 1 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description The BB199 is a low voltage variable capacitance diode for the Voltage Controlled Oscillator VCO and Voltage Controlled Crystal Oscillator (VCXO) applications.
|
Original
|
PDF
|
BB199
BB199
nxp Standard Marking
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DZ3600S17K3_B2 Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values !32C5C 361CB3D 1322 14DDD" 2313BCBC36134#62332 36B4"3
|
Original
|
PDF
|
DZ3600S17K3
2313BCBC
223DB
86B56
1231423567896A42BCD6EF
54B36
3567896A42BCD6
|
|
|
F2 7h
Abstract: f2 diode
Text: ZMY 1 . ZMY 200 1,3W power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module 7 C + @ = Absolute Maximum Ratings Symbol Conditions Surface mount diode Features
|
Original
|
PDF
|
|
K95 Package
Abstract: No abstract text available
Text: BAW101V HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • NEW PRODUCT • • • • • Fast Switching Speed: Maximum of 50ns High Reverse Breakdown Voltage: 325V for Single Diode or 650V for Series Connection Two Electrically Isolated Elements in a Single Compact Package
|
Original
|
PDF
|
BAW101V
150nA
OT-563
J-STD-020
DS32178
K95 Package
|
bc352
Abstract: KM90 BC370 K9015 2N3341 2N5242 OC201 2u 64 diode
Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index
|
Original
|
PDF
|
MPS5142
MPS5143
2N998
2N3677
2N2411
2N1991
PN5143
2N5143
2N2802
2N2803
bc352
KM90
BC370
K9015
2N3341
2N5242
OC201
2u 64 diode
|
BC352* CSR
Abstract: csr BC352 2N936 Emihus 2N828 MPS5143 Bc352 LOW-POWER SILICON PNP 2N850 transitron
Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index
|
Original
|
PDF
|
MPS5142
MPS5143
2N998
2N3677
2N2411
2N1991
PN5143
2N5143
2N2802
2N2803
BC352* CSR
csr BC352
2N936
Emihus
2N828
Bc352
LOW-POWER SILICON PNP
2N850
transitron
|
Untitled
Abstract: No abstract text available
Text: BAW101V HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • N EW PRODU CT • • • • • Fast Switching Speed: Maximum of 50ns High Reverse Breakdown Voltage: 325V for Single Diode or 650V for Series Connection Two Electrically Isolated Elements in a Single Compact Package
|
Original
|
PDF
|
BAW101V
150nA
OT-563
DS32178
|
k9 diode
Abstract: No abstract text available
Text: Technische Information / Technical Information Schnelle Dioden-Modul Fast Diode Module DZ 180 U 25 K-K9 S Elektrische Eigenschaften / Electrical properties Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: UM9301 PIN DIODE COMMERCIAL ATTENUATOR DIODE Features • • • • Specified low distortion Low rectification properties at low reverse bias Resistance specified at 3 current points High reliability fused-in-glass construction Description The UM9301 PIN Diode utilizes a special
|
OCR Scan
|
PDF
|
UM9301
UM9301
|
Untitled
Abstract: No abstract text available
Text: E R E 4 2 M - 1 5 I5 A mi FAST RECOVERY DIODE Features D am per diode fo r high definition TV and high resolution display. • i\tz? Ji' It —Jl' K9-f -f Insulated package by fully m o ld in g . Connection Diagram High voltage by mesa design. • ftflMKtt
|
OCR Scan
|
PDF
|
l95t/R89
|
200LC40B
Abstract: No abstract text available
Text: Super Fast Recovery Diode Diode Module Wtm D200LC40B OUTLINE 400V 200A Feature • S ffiS S U • High lo Rating • trr=150ns • Isolation type • FA • Semiconductor Process Machine • High power source • Factory Automation • trr=150ns Main Use
|
OCR Scan
|
PDF
|
D200LC40B
150ns
200LC40B
0LC40B
|
9962 GH
Abstract: L9932 l9933 9945 A transistor DTL 9930 9936 GN 9962 6H fairchild 9930 integrated circuits data inverter circuit diagram 9936 FD100 diode
Text: DIODE-TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT MILITARY TEMPERATURE RANGE: - 5 5 ° C to + 1 2 5 ° C GENERAL DESCRIPTION The Fairchild 9930 series of Diode Transistor Micrologic is a member of the Compatible Current Sinking Logic CCSL family designed for use in
|
OCR Scan
|
PDF
|
O-116)
0035j^
U3IXXXX51X
U6AXXXX51X
9962 GH
L9932
l9933
9945 A transistor
DTL 9930
9936 GN
9962 6H
fairchild 9930 integrated circuits data
inverter circuit diagram 9936
FD100 diode
|
