MCT210
Abstract: E91231
Text: MCT210 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm 2.54 APPROVALS z UL recognised, File No. E91231 Package Code " GG " 7.0 6.0 1 2 6 5 3 4 1.2 DESCRIPTION 7.62 6.62 The MCT210 optically coupled isolator consists of an infrared light emitting diode and
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MCT210
E91231
MCT210
32mAIF
5x1010
DB91089
E91231
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diode GG 64
Abstract: diode GG 71 AF118 Low-Power Germanium PNP ACY39 2N240 2G201 2G302 2N3604 ACY24
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 10 >= 2Gl024 2Gl024 2N2512 2N2512 2N2512 2G383 2G383 2G383 2Gl025 2Gl025 20 NKT237 ACY24 2Gl026 2Gl026 2Gl026 2G577 GT125L ACY17 ~~~g~~ 25 30 2Gl027 AF118 AF118 MA909 MA205 MA205 MA205 2N674 ~~~~~8 35 V BR CBO
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2Gl024
2N2512
2G383
2Gl025
2Gl025
diode GG 64
diode GG 71
AF118
Low-Power Germanium PNP
ACY39
2N240
2G201
2G302
2N3604
ACY24
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mallory 150m
Abstract: AC127 Low-Power Germanium NPN sk3010 2N366 germanium ac127 ASY28 npn 10 a 50 v germanium AC127-01 germanium
Text: LOW-POWER GERMANIUM NPN Item Number Part Number Manufacturer Y BR CBO hFE (V) Ic Max lA) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CEO (A) (V) PD Max (W) Derate at Toper (WrC) eC) Max Package Style D vic sUnder 1 Watt, (Co nt' d) 5 • 10 2N438A TA167 TA167 TA167
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2N438A
TA167
2N365
ASY28
2N167A
2SC128
mallory 150m
AC127
Low-Power Germanium NPN
sk3010
2N366
germanium ac127
npn 10 a 50 v germanium
AC127-01
germanium
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b0239c
Abstract: diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode
Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N5000 2N5150 2N5602 2N5154 2N6717 92GU06 92PU06 B0379-16 ~~~~~ 30 SOT5513 SOT5513 SOT5913 B0379-25 2SC3474 2S01914 2S01981 SK3512 - :g~~:~ - 25 35 -40 45 -50 RCA1A03 S2N4863-2 S2N4863-3 SMl5509 SMl5514
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OT5503
OT5903
2N6409
2S01516
b0239c
diode GG 66
diode 2U 66
MEAB
to-53
2U 39 diode
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bcy591x
Abstract: 2N6429A 2N2196 2N2147 2N2214 2N2161 2SC538A BCW66RG 2N2207 BC521
Text: LOW-POWER SILICON NPN Item Number Part Number 10 BC382 KSC1072 2SC538A 2SC538A 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG gg~~iB~ 15 20 BCY59B BCY59B BC171 JE9014 JC501R M02975 2N2916A BFY76 ~~~~~~B BCY59-B BCY59C BCY59C BCY55 BCX59-10 BCY59X BC237C BC237C18
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BC382
KSC1072
2SC538A
BCX59-9
BCX70J
BCY591X
TBC337A
BCW66RG
2N6429A
2N2196
2N2147
2N2214
2N2161
2N2207
BC521
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AF306
Abstract: 2n2654 AF178 Low-Power Germanium PNP AF186 2N3283 2N2672 2N77 GG10M 2N2929
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 2N1524 2N1426 2N1426 2N1526 2N1527 AF147 AF150 AF148 AF200 2N77 ~~Jg~ 15 20 AF306 2S8188 2N612 2N59 2N60 2N61 2N613 2N1561 ~~~~~~ 25 30 35 40 2N1692 2N1693 2N672 2N673 2N402 2N403 2N700 2N700A 2N3283 2N3284
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2N1524
2N1426
2N1526
2N1527
AF147
AF150
AF148
AF200
AF306
2n2654
AF178
Low-Power Germanium PNP
AF186
2N3283
2N2672
2N77
GG10M
2N2929
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OC140
Abstract: 2S0187 SK3011 Low-Power Germanium NPN TR182 2N43 2S030 2n357a ASY73
Text: LOW-POWER GERMANIUM NPN Item Number Part Number Manufacturer Y BR CBO hFE (V) Ic Max (A) fT (Hz) C bo Max (F) ICBO Max V(BR)CEO Po Max (A) (V) (W) Derate at (WrC) Tope, 2.5m 2.8m 2.5m 100 J 75 J 75 J 100 J 1.lm 4.0m 2.5m 2.0m 60A 75 A 100 J 100 J 100 J TO• 1
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2S0195
2N1431
OC140
2N1251
2S0186
2Nl00
2N169A
2N1585
2N1302
2SC180
2S0187
SK3011
Low-Power Germanium NPN
TR182
2N43
2S030
2n357a
ASY73
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2N2614
Abstract: 2N1396 33 16U Low-Power Germanium PNP 2N384 2N295 2N2957 2N2956 ACY20 2G413
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 • 10 2SA103 2N2797 2N2797 2N2797 MA891 MA891 2N1125 PTC102 NKT240 2G386 15 20 · 25 30 2N1395 2N1396 40005 2N1397 40006 2N59A NKT241 2N1699 ~~~~~9 2SA104 2Nl177 2G413 2G413 2G413 2G403 2N2614 NKT603F ACY30
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2SA103
2N2797
MA891
2N1125
PTC102
NKT240
2G386
2N2614
2N1396
33 16U
Low-Power Germanium PNP
2N384
2N295
2N2957
2N2956
ACY20
2G413
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2n2224
Abstract: 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245
Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272
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EN914
2N708
2N914A
BSY19
2N3605A
2N3606A
2n2224
2N2222B
2N2244
2N4418
2N2374
2SC321H
2N2250
ESM2369
rca 2N2270
2N2245
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mpc apc
Abstract: CX02066 CX02066B24 CX02066DIEWP CX02066TQ32 CX02066WAFER MAX3869 TQFP32
Text: CX02066 3.3 Volt Laser Driver IC for Applications to 3 Gbps FEATURES The CX02066 is a highly integrated, programmable laser driver intended for SONET/SDH applications with FEC to 3 Gbps. Using differential PECL data and clock inputs, the CX02066 supplies the bias and
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CX02066
CX02066
mpc apc
CX02066B24
CX02066DIEWP
CX02066TQ32
CX02066WAFER
MAX3869
TQFP32
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UPA76ha
Abstract: 2SC2291 uPA49A 2AD149 MA7809 MP2060-6 B1181MP BFX10 HA7808 2N4009
Text: MATCHED PAIRS & COMPOSITES Item Number Part Number Manufacturer V BR CEO hFE (V) Ic Max (A) fT (Hz) PD Max (W) Mati. Description Package Style NPN Monolithic Pairs, (Co nt' d) 5 10 BFY83 BFY83 BFY83 2N3517 2N3517 MD8003 UPA76HA AD813 2N4044 MP312 ~S~;:~A 15
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BFY83
2N3517
MD8003
UPA76HA
AD813
2N4044
MP312
2SC2291
uPA49A
2AD149
MA7809
MP2060-6
B1181MP
BFX10
HA7808
2N4009
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2U 37 diode
Abstract: M810S KT934B diode 2N4000 2N2196 KT934G KT646A 2N6390 2N2197 semelab 2N2197
Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 >= 50 BSX46•6 MH8106 MS106 MS106 BCX55-6 TN2017 2N2017 BC141B ~g~~t~g 55 60 65 70 2N2197 BD415 2N6551 BC141C BSX46·16 BCX55·16 2SD1615 2SD1615 2S01615A 2SD1615A BD320 SD1527·8 BFR22
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220AB
205AD
2N4923
2N4000
MM3020
2SD221F
BCX56
DTL1653
2U 37 diode
M810S
KT934B
diode 2N4000
2N2196
KT934G
KT646A
2N6390
2N2197 semelab
2N2197
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2N2431
Abstract: Low-Power Germanium PNP 2N504 JI 32 AC184 2N544 ac151 2N3324 2n3325 ac125 germanium
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 AC153 AC153K AC153K 2N2431 AC126 ACY23 ACY23V ACY32 AC125 AC191 ~g~~~ 15 20 AC138 AC138 AC182 AC182 AC182 AC151 AC151 AC151 ~g~~~ 25 30 AC162 AC184 AC184 AC117 AC117 AC180 AC180 AC132 ~~~~~~ 35 40 2S8345
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AC153
AC153K
2N2431
AC126
ACY23
ACY23V
ACY32
AC125
AC191
Low-Power Germanium PNP
2N504
JI 32
AC184
2N544
ac151
2N3324
2n3325
ac125 germanium
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npn 100n 1a
Abstract: KT922A 2N2650 STXB 2S01733 motorola diode 2n3253 750M10 2n697a 2S0774
Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 Natl Semi See Index Micro Elecs Natl Semi See Index V/O Electro Elec Trans Solid Stlnc Sanyo Elect PhilipsElec Philips~!ec 25 30 35 40 45 :'U 55 60 65 - 70 75 - 80 85 9U PhilipsElec See Index Semelab NthAmerSemi
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TN221BA
2N55B1
TN2219A
2N55B2
KT922A
2SCB22
2SC822
2SC37BO
BLX97
npn 100n 1a
2N2650
STXB
2S01733
motorola diode
2n3253
750M10
2n697a
2S0774
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4916 mosfet
Abstract: 8 pin IC 4916 SYN500 TDA 4916 GG Q67000-A9230 voltage multiplier GPS05144 Transistors Diodes smd k5 diode GG 79 smd transistor K1
Text: SMPS-IC with MOSFET Driver Output TDA 4916 GG Features • • • • High clock frequency Low current drain High reference accuracy All monitoring functions P-DSO-24-1 Type Ordering Code Package TDA 4916 GG Q67000-A9230 P-DSO-24-1 Functional Description and Application
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P-DSO-24-1
Q67000-A9230
GPS05144
4916 mosfet
8 pin IC 4916
SYN500
TDA 4916 GG
Q67000-A9230
voltage multiplier
GPS05144
Transistors Diodes smd k5
diode GG 79
smd transistor K1
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2n4889
Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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Untitled
Abstract: No abstract text available
Text: SMPS-IC with MOSFET Driver Output TDA 4916 GG Features • • • • High clock frequency Low current drain High reference accuracy All monitoring functions P-DSO-24-1 Type Ordering Code Package TDA 4916 GG Q67007-A9230 P-DSO-24-1 Functional Description and Application
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P-DSO-24-1
Q67007-A9230
GPS05144
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4916 mosfet
Abstract: TDA 4916 GG 8 pin IC 4916 smps control ic with 6 pin sip smd diode K7 Transistors Diodes smd k5 4916 8 pin mosfet k5 smd GPS05144 Q67000-A9230
Text: Datasheet, V2.0, 1 May 1996 PWM-FF IC TDA4916GG SMPS IC with MOSFET Driver Output Power Management & Supply N e v e r s t o p t h i n k i n g . TDA4916GG Revision History: 1996-05-01 Datasheet Previous Version: Page Subjects major changes since last revision
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TDA4916GG
D-81541
4916 mosfet
TDA 4916 GG
8 pin IC 4916
smps control ic with 6 pin sip
smd diode K7
Transistors Diodes smd k5
4916 8 pin mosfet
k5 smd
GPS05144
Q67000-A9230
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BA204
Abstract: BA-204
Text: TELEFUNKEN ELECTRONIC 17E » • ÖTEDO^b OOD'ÌTIB 5 H A L GG BA 204 IM electronic Creative Technologies Silicon Fpitaxial Planar Diode Applications: General purpose Dimensions in mm Cathoda =>26 1 1 <3.9 g<ass -—' - n u— Standard glass case
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Diode BAY 93
Abstract: diode MARKING A9 3814 rus25 Scans-0014926
Text: TELEFUNKEN ELECTRONIC 17E D • Û00S753 b ■ AL GG BAY 93 ■¡nH IF(U I«IM electronic Creative Technologies T -Q l-Q j Silicon Epitaxial Planar Diode Applications: Very fast switches Dim ensions in mm Cathode »26 Standard glass case 5 4 A 2 DIN 41880
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000S7S3
ruS25Â
0Dtn754
T-03-09
Diode BAY 93
diode MARKING A9
3814
rus25
Scans-0014926
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Diode BAY 93
Abstract: a9 sot 23 diode
Text: TELEFUNKEN ELECTRONIC 17E D Û00S753 b • AL GG ■ BAY 93 ■¡nH IF(U I«IM electronic Creative Technologies T -Q l-Q j Silicon Epitaxial Planar Diode Applications: Very fast switches Dimensions in mm Cathode »26 Standard glass case 5 4 A 2 DIN 41880 JEDEC DO 35
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00S753
Diode BAY 93
a9 sot 23 diode
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Untitled
Abstract: No abstract text available
Text: SCS -THOMSON TDF1779A DUAL 2-A SOURCE DRIVER . OUTPUT CURRENT UP TO 2.5 A • WIDE RANGE OF SUPPLY VOLTAGE : + 8 V TO + 26 V . CAN WITHSTAND OVERVOLTAGES OF AS HIGH AS 60 V BETWEEN Vcc AND GROUND ■ OUTPUT VOLTAGE CAN SWING TO LOWER THAN GROUND ■ ’’SENSE” AND ’’ALARM” OUTPUTS ARE OPEN
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TDF1779A
TDF1779A
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Untitled
Abstract: No abstract text available
Text: 26-33 GHz GaAs MMIC Image Rejection Balanced Mixer ESAlpha AM028R1-00 Chip Q j t l i n e F eat ur e s • Low Conversion Loss, 8 dB 2 .1 5 5 ■ Insensitive to LO Power Variations ■ Image Rejection, 20 dB ■ No DC Bias Required ■ Requires External IF 90° Hybrid
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AM028R1-00
2/99A
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DIODE 3LU
Abstract: DIODE 3LU 28 3lu diode DIODE 3LU 35
Text: n - n x V 'C X - Y - Super Fast Recovery Diode S3L20U Axial Diode OUTLINE DIMENSIONS Package I AX14 200V 3A IÍ7+0.5 26.5±2 •trr50ns 7-0 u> H m 3LU 05 •S R S ÍÜ • 7 5 - r jn - f- ju •^ B s O A .P ,^ tw 26.5±2 ° I> ffi'E Polarity Type No. • i l i S s FA
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S3L20U
trr50ns
J515-5
J515-5
DIODE 3LU
DIODE 3LU 28
3lu diode
DIODE 3LU 35
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