RHRG50100
Abstract: No abstract text available
Text: RHRG50100 Data Sheet January 2000 File Number 3106.3 50A, 1000V Hyperfast Diode Features The RHRG50100 is a hyperfast diode with soft recovery characteristics trr < 75ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated
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RHRG50100
RHRG50100
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pert
Abstract: RHRG50100
Text: RHRG50100 Data Sheet Title HR 010 bt A, 00V pert ode utho eyrds A, 00V pert ode, errpoon, pert odes vache ergy ted, itch wer pes, wer itch January 2000 File Number 3106.3 50A, 1000V Hyperfast Diode Features The RHRG50100 is a hyperfast diode with soft recovery
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RHRG50100
RHRG50100
pert
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106 25v
Abstract: ZC744 diode 3106 R 2.8 diode DSA003761 c30 diode
Text: SILICON EPITAXIAL PLANAR ABRUPT TUNER DIODE ZC744 ISSUE 2 SEPTEMBER 94 DIODE PIN CONNECTION 1 1 CATHODE 2 2 ANODE E-Line TO92 Compatible ELECTRICAL CHARACTERISTICS at Tamb=25°C PARAMETER SYMBOL MIN TYP MAX UNIT Reverse Breakdown Voltage VR Reverse Voltage Leakage
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ZC744
C2/C30
50MHz
106 25v
ZC744
diode 3106
R 2.8 diode
DSA003761
c30 diode
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Untitled
Abstract: No abstract text available
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 440 640 400 600 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ①
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OT-227
E72873
30-04C
31-04C
30-06C
31-06C
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dsei 31-06c
Abstract: ixys dsei IXYS DSEI 2X E72873 3104c IXYS DSEI 2 3188 diode
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 440 640 400 600 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ①
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OT-227
E72873
30-04C
31-04C
30-06C
31-06C
dsei 31-06c
ixys dsei
IXYS DSEI 2X
E72873
3104c
IXYS DSEI 2
3188 diode
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IXYS DSEI 2
Abstract: ixys dsei 2x30
Text: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 IFAVM = 2x30 A VRRM = 600 V trr = 35 ns Type DSEI 2x 30-06P DSEI 2x 31-06P 2x 30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5
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30-06P
31-06P
IXYS DSEI 2
ixys dsei 2x30
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2x31-06P
Abstract: DSEI IXYS
Text: DSEI 2x31-06P IFAVM = 2x30 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 Type DSEI 2x 31-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x31-06P
31-06P
20070731a
2x31-06P
DSEI IXYS
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IXYS DSEI 2
Abstract: E72873 dsei 31-06c ixys dsei
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 440 640 400 600 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ¬
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OT-227
E72873
30-04C
31-04C
30-06C
31-06C
IXYS DSEI 2
E72873
dsei 31-06c
ixys dsei
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Untitled
Abstract: No abstract text available
Text: VRSM IFAVM IFRMS IFSM VF0 rF Rectifier Diode = 5200 V = 1978 A = 3106 A = 25.6x103 A = 0.94 V = 0.284 mΩ Ω 5SDD 20F5000 Doc. No. 5SYA1162-01 Jan. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1 Parameter
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20F5000
5SYA1162-01
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5200 1978 3106 24x103 0.94 0.284 Rectifier Diode V A A A V mΩ Ω 5SDD 20F5000 Doc. No. 5SYA1162-01 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1)
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20F5000
5SYA1162-01
CH-5600
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diode 3106
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5200 1978 3106 24x103 0.94 0.284 Rectifier Diode V A A A V mΩ 5SDD 20F5000 Doc. No. 5SYA1162-01 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter
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20F5000
5SYA1162-01
CH-5600
diode 3106
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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K1 MARK 6PIN
Abstract: MOC1193S
Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES
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MOC119
MOC119
E90700
diffe700,
P01101067
MOC119300
MOC119300W
MOC1193S
MOC1193SD
K1 MARK 6PIN
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h11dx
Abstract: No abstract text available
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11DX
H11D1
H11D2
H11D3
H11D4
H11D1,
H11D2,
H11D3,
H11D4,
E90700
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
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H11DX
Abstract: H11D1 H11D2
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
H11D1
H11D2
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Untitled
Abstract: No abstract text available
Text: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
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CNX82A
CNX83A
SL5582
SL5583
E90700)
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RHRG50100
Abstract: No abstract text available
Text: in terrii RHRG50100 Data Sheet J a n u a ry . m i File Num ber 3106.3 50A, 1000V Hyperfast Diode Features The RHRG50100 is a hyperfast diode with soft recovery characteristics trr < 75ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated
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OCR Scan
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PDF
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RHRG50100
RHRG50100
TA49066.
O-247
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR ABRUPT TUNER DIODE ISSUE 2 - SEPTEMBER 94_ DIODE PIN CONNECTION 2 ANODE CATHODE ILECTRICAL CHARACTERISTICS at Tamb=25°C SYMBOL PARAMETER MIN TYP MAX 30 UNIT Reverse Breakdown Voltage Vr Reverse Voltage Leakage Ir Case Capacitance
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OCR Scan
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ZC744
50MHz
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR ABRUPT TUNER DIODE ISSUE 2 - SEPTEMBER 94_ DIODE PIN CONNECTION w2 ANO DE CATHODE ELECTRICAL CHARACTERISTICS at Tamb=25°C PARAMETER SYMBOL Reverse Breakdow n Voltage Vr MIN TYP MAX 30 UNIT V lf^=10|xA HA V r=25V Reverse Voltage Leakage
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50MHz
ZC744
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D226 diode
Abstract: No abstract text available
Text: DIXYS DSEP 2x 31-06A Advanced Technical Data HiPerFRED Epitaxial Diode with Soft Recovery V RSM - 1 T ype V V rrm V 600 600 DSEP 2 x 3 1 -06A Symbol Test Conditions Ifrms Ifavm Ifrm Tc = 9 5 °C ; rectangular, d = 0.5; per diode tP < 10 us; rep. rating, pulse width limited by TVJM
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1-06A
100de
D2-31
D2-26
D226 diode
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dsei 31-06c
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED Type 440 640 400 600 Symbol LT— I <H-H- 1-0 DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C Test Conditions DSEI 2x 30 DSEI 2x 31 Maximum Ratings (per diode) ^FRM TVJ T\um Tc = 85°C; rectangular, d = 0.5
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30-04C
31-04C
30-06C
31-06C
OT-227
E72873
dsei 31-06c
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transistor TIP 320
Abstract: No abstract text available
Text: [*9 SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB861N51/OPB861N55 PACKAQE DIMENSIONS The OPB 861N series of switches is designed to allow the SEE NOTE 3 user m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN
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OPB861N51/OPB861N55
encl20
OPB861N51
OPB861N55
transistor TIP 320
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