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    DIN 6784 C1 Search Results

    DIN 6784 C1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DNPDM6MMX2-006 Amphenol Cables on Demand Amphenol CS-DNPDM6MMX2-006 Premium 6-pin Mini-DIN 6 (MD6) Cable - Mini-DIN 6 Male to Mini-DIN 6 Male 6ft Datasheet
    BPBS8B21P3LF Amphenol Communications Solutions Din Accessory Cover Visit Amphenol Communications Solutions
    65195-001LF Amphenol Communications Solutions Din Accessory Latching Lock Visit Amphenol Communications Solutions
    515903532189311LF Amphenol Communications Solutions DIN STANDARD POWER Visit Amphenol Communications Solutions
    68341-001LF Amphenol Communications Solutions Din Accessory C.T.W Housing Visit Amphenol Communications Solutions

    DIN 6784 C1 Datasheets Context Search

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    infineon marking code E1 sot23

    Abstract: E6327 DIN 6784 DIN 6784 c1 marking 2x SOT323 WM infineon marking code B2 SOT23 marking code 10 sot23 WM Marking code BCR183
    Text: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package


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    PDF BCR183. BCR183S BCR183/F/L3 BCR183T/W BCR183S/U EHA07183 EHA07173 BCR183 BCR183F BCR183L3 infineon marking code E1 sot23 E6327 DIN 6784 DIN 6784 c1 marking 2x SOT323 WM infineon marking code B2 SOT23 marking code 10 sot23 WM Marking code BCR183

    Untitled

    Abstract: No abstract text available
    Text: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ • BCR141S / U: Two internally isolated transistors with good matching in one multichip package BCR141/F/L3


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    PDF BCR141. BCR141S BCR141/F/L3 BCR141T/W BCR141S/U EHA07184 EHA07174 BCR141 BCR141F BCR141L3

    marking WSs

    Abstract: No abstract text available
    Text: BCR169. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ • BCR169S / U: Two internally isolated transistors with good matching in one multichip package BCR169/F/L3


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    PDF BCR169. BCR169S BCR169/F/L3 BCR169T/W BCR169S/U EHA07180 EHA07266 BCR169 BCR169F BCR169L3 marking WSs

    DIN 6784 c1

    Abstract: E6327 BCR148W
    Text: BCR148. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=47 kΩ, R2=47 kΩ • BCR148S / U: Two internally isolated transistors with good matching in one multichip package


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    PDF BCR148. BCR148S BCR148/F/L3 BCR148T/W BCR148S/U EHA07184 EHA07174 BCR148 BCR148F BCR148L3 DIN 6784 c1 E6327 BCR148W

    DIN 6784

    Abstract: E6327 infineon marking code E1 sot23 marking code 10 sot23 BCR185 BCR185F BCR185L3 BCR185S BCR185T BCR185U
    Text: BCR185. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 47 kΩ • BCR185S / U: Two internally isolated transistors with good matching in one multichip package


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    PDF BCR185. BCR185S BCR185/F/L3 BCR185T/W BCR185S/U EHA07183 EHA07173 BCR185 BCR185F BCR185L3 DIN 6784 E6327 infineon marking code E1 sot23 marking code 10 sot23 BCR185 BCR185F BCR185L3 BCR185T BCR185U

    DIN 6784 c1

    Abstract: DIN 6784 E6327 BCR192 BCR192F BCR192L3 BCR192T BCR192U BCR192W infineon marking code B2 SOT23
    Text: BCR192. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22kΩ , R2 = 47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


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    PDF BCR192. BCR192/F/L3 BCR192T/W BCR192U EHA07173 EHA07183 BCR192 BCR192F BCR192L3 BCR192T DIN 6784 c1 DIN 6784 E6327 BCR192 BCR192F BCR192L3 BCR192T BCR192U BCR192W infineon marking code B2 SOT23

    WFs transistor

    Abstract: SOT323 WF BCR112U E6327 BCR112 BCR112F BCR112L3 BCR112T BCR112W infineon marking code B2 SOT23
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


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    PDF BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07174 EHA07184 BCR112 BCR112F BCR112L3 BCR112T WFs transistor SOT323 WF BCR112U E6327 BCR112 BCR112F BCR112L3 BCR112T BCR112W infineon marking code B2 SOT23

    Untitled

    Abstract: No abstract text available
    Text: BCR129. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10 kΩ • BCR129S: Two internally isolated transistors with good matching in one multichip package BCR129/F/L3 BCR129T/W


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    PDF BCR129. BCR129S: BCR129/F/L3 BCR129T/W BCR129S EHA07264 EHA07265 BCR129 BCR129F BCR129L3

    marking WGs sot23

    Abstract: transistor marking code wgs BCR116
    Text: BCR116. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7 kΩ, R2=47 kΩ • BCR116S: Two internally isolated transistors with good matching in one multichip package BCR116/F/L3


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    PDF BCR116. BCR116S: BCR116/F/L3 BCR116T/W BCR116S EHA07184 EHA07174 BCR116 BCR116F BCR116L3 marking WGs sot23 transistor marking code wgs

    Untitled

    Abstract: No abstract text available
    Text: BCR133. NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • BCR133S: Two internally isolated transistors with good matching in one multichip package


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    PDF BCR133. BCR133S: BCR133/F/L3 BCR133T/W BCR133S EHA07184 EHA07174 BCR133 BCR133F BCR133L3

    DIN 6784

    Abstract: SOT363 Marking 1B BCR198W
    Text: BCR198. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47 kΩ , R2 = 47 kΩ • BCR198S: Two internally isolated transistors with good matching in one multichip package


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    PDF BCR198. BCR198S: BCR198/F/L3 BCR198T/W BCR198S EHA07183 EHA07173 BCR198 BCR198F BCR198L3 DIN 6784 SOT363 Marking 1B BCR198W

    marking WHS sot23

    Abstract: transistor marking code whs
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108/F/L3


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    PDF BCR108. BCR108S: BCR108/F/L3 BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108L3 marking WHS sot23 transistor marking code whs

    DIN 6784

    Abstract: No abstract text available
    Text: BCR119. NPN silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=4.7 kΩ • BCR119S: Two internally isolated transistors with good matching in one multichip package BCR119/F/L3 BCR119T/W


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    PDF BCR119. BCR119S: BCR119/F/L3 BCR119T/W BCR119S EHA07264 EHA07265 BCR119 BCR119F BCR119L3 DIN 6784

    DIN 6784

    Abstract: DIN 6784 c1 infineon marking code E1 sot23 E6327 marking code 10 sot23 top marking c2 sot23 BCR135 BCR135F BCR135L3 BCR135S
    Text: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package BCR135/F/L3


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    PDF BCR135. BCR135S: BCR135/F/L3 BCR135T/W BCR135S EHA07184 EHA07174 BCR135 BCR135F BCR135L3 DIN 6784 DIN 6784 c1 infineon marking code E1 sot23 E6327 marking code 10 sot23 top marking c2 sot23 BCR135 BCR135F BCR135L3 BCR135S

    marking code TS

    Abstract: No abstract text available
    Text: BCR103. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=2.2kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


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    PDF BCR103. BCR103/F BCR103L3/T BCR103U EHA07184 EHA07174 BCR103 BCR103F BCR103L3 BCR103T marking code TS

    marking code 52 diode

    Abstract: No abstract text available
    Text: BBY51. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment BBY51 BBY51-02L BBY51-02W BBY51-03W 3 D 2 D 1 1 1 2 2 Type BBY51 BBY51-02L* BBY51-02W BBY51-03W


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    PDF BBY51. BBY51 BBY51-02L BBY51-02W BBY51-03W BBY51 BBY51-02L* SCD80 marking code 52 diode

    Untitled

    Abstract: No abstract text available
    Text: Thermal Overcurrent Circuit Breaker 3130 Description Single, two and three pole rocker switch/thermal trip free circuit breakers S-type TO CBE to EN 60934 of compact design for snap-in panel mounting. Available either with protection on one/both/all poles or,


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    PDF X3130

    DIN 6784

    Abstract: BCR153 BCR153F BCR153L3 BCR153T BCR153U SC74 SC75
    Text: BCR153. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=2.2kΩ, R2 =2.2kΩ • BCR153U: Two internally isolated transistors with good matching in one multichip package BCR153F/L3


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    PDF BCR153. BCR153U: BCR153F/L3 BCR153T BCR153U EHA07183 EHA07173 BCR153L3 DIN 6784 BCR153 BCR153F BCR153L3 BCR153T BCR153U SC74 SC75

    DIN 6784 c1

    Abstract: BCR108S BFS17S E6327 VPS05604
    Text: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363


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    PDF BFS17S VPS05604 EHA07196 OT363 DIN 6784 c1 BCR108S BFS17S E6327 VPS05604

    DIN 6784 c1

    Abstract: No abstract text available
    Text: BCR523U NPN Silicon Digital Transistor Array 5  Switching circuit, inverter, interface circuit, 4 6 driver circuit  Two galvanic internal isolated Transistors with good matching in one package 3 2  Built in bias resistor (R1=1k, R2 =10k) 1 C1 B2 E2


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    PDF BCR523U VPW09197 EHA07174 DIN 6784 c1

    marking 5bs

    Abstract: BC807
    Text: BC807U PNP Silicon Transistor Array  For AF input stages and driver applications 5 4 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2


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    PDF BC807U VPW09197 EHA07175 115cal marking 5bs BC807

    Untitled

    Abstract: No abstract text available
    Text: BC817U NPN Silicon Transistor Array  For AF input stages and driver applications 5 4 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2


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    PDF BC817U VPW09197 EHA07178

    marking 1ks

    Abstract: BCV61
    Text: BCV61 NPN Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration


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    PDF BCV61 VPS05178 EHA00012 BCV61A BCV61B BCV61C OT143 OT143 marking 1ks BCV61

    DIN 16901 150

    Abstract: 15336029
    Text: 12 I - y - _3_ 10 Benennung Title Pos. A-A 90° ia ,i 11.21 (3D 5,9 0.1 (D 2 3 I I ID-No. Flachstehhülsenqehäuse 3 pol. Receptacle housing 3 way Flachstehhülsenqehäuse 3 pol. Receptacle housing 3 way Verriegelungskappe 3 pol. Secondary lock 3 way


    OCR Scan
    PDF 05FE01 1997/Name: DIN 16901 150 15336029