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Infineon Technologies AG BCR-108F-E6327 TRANS PREBIAS NPN 50V TSFP-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BCR-108F-E6327	Reel			39,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

BCR108F Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BCR108F		Infineon Technologies	Dual Built-in Resistor AF Transistors 2xNPN Industrial Standars Types, Icmax of 100mA Vceo of 50V		Original	PDF
BCR108F		Infineon Technologies	NPN Silicon Digital Transistor		Original	PDF
BCR108FE6327		Infineon Technologies	Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSFP-3		Original	PDF
BCR108FE6327		Infineon Technologies	Digital Transistors - R1= 2,2 kOhm , R2= 47 kOhm		Original	PDF
BCR108FE6327		Infineon Technologies	TRANS DIGITAL BJT NPN 50V 100MA 3TSFP-3 T/R		Original	PDF
BCR 108F E6327		Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW TSFP-3		Original	PDF

BCR108F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BCR108 Abstract: BCR108F BCR108L3 BCR108S SEMH10 Text: BCR108./SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Original	PDF	BCR108. /SEMH10 BCR108/F/L3 BCR108T/W BCR108S SEMH10 EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108L3 BCR108S SEMH10
BCR108 Abstract: BCR108F BCR108S BCR108W BCW66 bcr1 Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see	Original	PDF	BCR108. BCR108S: BCR108/F BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108S BCR108W BCW66 bcr1
BFP620F Abstract: TSFP-4 BFR34* transistor BC848BF BA892-07F BAT62-07F BAS40-04F Infineon Technologies transistor 4 ghz BAR63-07F BAV70F Text: P B R O D U C T R I E F A new Milestone in Miniaturization of SMD Standard Packages for Discrete Components TSFP stands for Thin Small Flat Package. With a reduced height of max. 0.59 mm vs. 0.8 mm for a SC-75 package and an outline of only 1.2 x 1.2 mm2 for TSFP-3 (vs. 1.6 × 1.6 mm2 for	Original	PDF	SC-75 SC-75) B114-H7900-X-X-7600 BFP620F TSFP-4 BFR34* transistor BC848BF BA892-07F BAT62-07F BAS40-04F Infineon Technologies transistor 4 ghz BAR63-07F BAV70F
marking WHS sot23 Abstract: transistor marking code whs Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108/F/L3	Original	PDF	BCR108. BCR108S: BCR108/F/L3 BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108L3 marking WHS sot23 transistor marking code whs
Untitled Abstract: No abstract text available Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see	Original	PDF	BCR108. BCR108S: BCR108/F BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F
BCR108 Abstract: BCR108F BCR108L3 BCR108S SEMH10 Text: BCR108./SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Original	PDF	BCR108. /SEMH10 BCR108/F/L3 BCR108T/W BCR108S SEMH10 EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108L3 BCR108S SEMH10
BCR108 Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see	Original	PDF	BCR108. BCR108S: BCR108/F/L3 BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108L3 BCR108S BCR108T BCR108W
BCR108 Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W bcr1 Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Original	PDF	BCR108. BCR108/F/L3 BCR108T/W BCR108S EHA07174 EHA07184 BCR108 BCR108F BCR108L3 BCR108 BCR108F BCR108L3 BCR108S BCR108T BCR108W bcr1