NT5TU128M8DE
Abstract: NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD NT5TU256M4DE nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE
Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG NT5TB256M4DE / NT5TB128M8DE / NT5TB64M16DG 1Gb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -AD/-ADI -AC/-ACI/-ACL -BE -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6
|
Original
|
PDF
|
NT5TU256M4DE
NT5TU128M8DE
NT5TU64M16DG
NT5TB256M4DE
NT5TB128M8DE
NT5TB64M16DG
-37B/-37BI
DDR2-533
DDR2-667
DDR2-800
NT5TU64M16DG
nt5tu64m16dg-Bd
NT5TU128M8DE-BD
nt5tu64m
NT5TU64M16
NT5TU64M16DG-3C
NT5TU64M16DG-3CI
NT5TU64M16DG-BE
|
SSTUA32864
Abstract: SSTUA32866
Text: SSTUG32868 1.8 V 28-bit 1 : 2 configurable registered buffer with parity for DDR2-1G RDIMM applications Rev. 01 — 23 April 2007 Product data sheet 1. General description The SSTUG32868 is a 1.8 V 28-bit 1 : 2 register specifically designed for use on two rank
|
Original
|
PDF
|
SSTUG32868
28-bit
SSTUG32868
14-bit
SSTUA32864
SSTUA32866
|
NT5TU32M16CG-BD
Abstract: NT5TU32M16CG-be NT5TU64M8CE
Text: NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features • 1.8V ± 0.1V Power Supply Voltage • Data-Strobes: Bidirectional, Differential • Programmable CAS Latency: 3,4,5,6 and 7 • 4 internal memory banks • Programmable Additive Latency: 0, 1, 2, 3, and 4
|
Original
|
PDF
|
NT5TU128M4CE
NT5TU64M8CE
/NT5TU32M16CG
512Mb
NT5TU32M16CG-BD
NT5TU32M16CG-be
|
IMX6DQ6SDLSRM
Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX6DQIEC Rev. 2.3, 07/2013 MCIMX6QxCxxxxC MCIMX6DxCxxxxC i.MX 6Dual/6Quad Applications Processors for Industrial Products Package Information Case FCPBGA 21 x 21 mm, 0.8 mm pitch Ordering Information
|
Original
|
PDF
|
1080p
64-bit
DDR3/LVDDR3/LPDDR2-1066
IMX6DQ6SDLSRM
|
Untitled
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
|
Original
|
PDF
|
|
IMX6DQ6SDLSRM
Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX6DQAEC Rev. 2.3, 07/2013 MCIMX6QxAxxxxC MCIMX6DxAxxxxC i.MX 6Dual/6Quad Automotive and Infotainment Applications Processors Package Information Case FCPBGA 21 x 21 mm, 0.8 mm pitch Ordering Information
|
Original
|
PDF
|
|
W971GG6JB
Abstract: 8X12 DDR2-667 DDR2-800 0A80
Text: W971GG6JB 8M 8 BANKS 16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
|
Original
|
PDF
|
W971GG6JB
W971GG6JB
8X12
DDR2-667
DDR2-800
0A80
|
sony cmos sensor imx 117
Abstract: sony IMX 117 imx 117 sensor sony cmos sensor imx 174 sony IMX 135 sony CMOS sensor imx 135 225/sony cmos sensor imx IMX 206 imx 117
Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX6DQAEC Rev. 3, 03/2014 MCIMX6QxAxxxxC MCIMX6QxAxxxxD MCIMX6DxAxxxxC MCIMX6DxAxxxxD i.MX 6Dual/6Quad Automotive and Infotainment Applications Processors Package Information Case FCPBGA 21 x 21 mm, 0.8 mm pitch
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX6DQIEC Rev. 2.1, 07/2013 MCIMX6QxCxxxxC MCIMX6DxCxxxxC i.MX 6Dual/6Quad Applications Processors for Industrial Products Package Information Case FCPBGA 21 x 21 mm, 0.8 mm pitch Ordering Information
|
Original
|
PDF
|
1080p
64-bit
DDR3/LVDDR3/LPDDR2-1066
|
sony cmos sensor imx 175
Abstract: sony IMX 132 CMOS Sony IMX 183 sony IMX 145 image sensor DDR21 imx cmos sony sony IMX 140 sensor sony cmos sensor imx 071
Text: Document Number: MCIMX35SR2CEC Rev. 8, 04/2010 MCIMX35 i.MX35 Applications Processors for Industrial and Consumer Products Package Information Plastic package Case 5284 17 x 17 mm, 0.8 mm Pitch Silicon Revisions 2.0 and 2.1 Ordering Information See Table 1 on page 3 for ordering information.
|
Original
|
PDF
|
MCIMX35SR2CEC
MCIMX353CVM5B,
MCIMX353DVM5B,
MCIMX357CVM5B,
MCIMX357DVM5B.
MCIMX35
MX353
MX357
ARM1136JF-S
sony cmos sensor imx 175
sony IMX 132 CMOS
Sony IMX 183
sony IMX 145 image sensor
DDR21
imx cmos sony
sony IMX 140 sensor
sony cmos sensor imx 071
|
MT47H128M8CF-25
Abstract: 8 resistor array 10k smd 103
Text: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration
|
Original
|
PDF
|
MT47H128M8
MT47H64M16
18-compatible)
8192-cycle
09005aef840eff89
MT47H128M8CF-25
8 resistor array 10k smd 103
|
samsung EMMC user guide
Abstract: Jedec lpddr2 samsung lpddr2 Mobile RAM samsung eMMC 4.5 MX53UG n78c AMBA AXI dma controller designer user guide lpddr2 layout SONY VTR M15 DIAGRAM DDR3 jedec
Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53AEC Rev. 4, 11/2011 MCIMX53xA i.MX53xA Automotive and Infotainment Applications Processors Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Ordering Information
|
Original
|
PDF
|
IMX53AEC
MCIMX53xA
MX53xA
MX53xA)
1080i/p
samsung EMMC user guide
Jedec lpddr2
samsung lpddr2 Mobile RAM
samsung eMMC 4.5
MX53UG
n78c
AMBA AXI dma controller designer user guide
lpddr2 layout
SONY VTR M15 DIAGRAM
DDR3 jedec
|
sony cmos sensor imx 174
Abstract: Sony "IMX 175" CMOS
Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX6DQAEC Rev. 2.1, 07/2013 MCIMX6QxAxxxxC MCIMX6DxAxxxxC i.MX 6Dual/6Quad Automotive and Infotainment Applications Processors Package Information Case FCPBGA 21 x 21 mm, 0.8 mm pitch Ordering Information
|
Original
|
PDF
|
|
|
pin vga CRT pinout
Abstract: samsung* lpddr2 LPDDR2-800 i.MX53 PCIMX535DVV1C emmc DDR pcb layout Samsung eMMC 4.41 LPDDR2 PoP JESD209-2 flexcan2
Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 3, 7/2011 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA PoP 12 x 12 mm
|
Original
|
PDF
|
IMX53CEC
MCIMX53xD
MX53xD
pin vga CRT pinout
samsung* lpddr2
LPDDR2-800
i.MX53
PCIMX535DVV1C
emmc DDR pcb layout
Samsung eMMC 4.41
LPDDR2 PoP
JESD209-2
flexcan2
|
HYB18T1G160C2F-25F
Abstract: HYB18T1G400C2F-3S HYB18T1G800C2F-25F HYI18T1G160C2F-3 DDR2-800E
Text: January 2008 HY[B/I]18T1G400C2[C/F] HY[B/I]18T1G800C2[C/F] HY[B/I]18T1G160C2[C/F] 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.02 Internet Data Sheet HY[B/I]18T1G[40/80/16]0C2[C/F] 1-Gbit Double-Data-Rate-Two SDRAM
|
Original
|
PDF
|
18T1G400C2
18T1G800C2
18T1G160C2
18T1G
HYB18T1G160C2F-25F
HYB18T1G400C2F-3S
HYB18T1G800C2F-25F
HYI18T1G160C2F-3
DDR2-800E
|
Untitled
Abstract: No abstract text available
Text: ESMT M14D5121632A 2H Operation Temperature Condition (TC) -40°C~95°C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z VDD = 1.75V ~ 1.9V, VDDQ = 1.75V ~ 1.9V (for speed grade -1.8) z
|
Original
|
PDF
|
M14D5121632A
|
M14D1G166
Abstract: m14d1g M14D1G1664A m14d1g16 DDRII esmt
Text: ESMT M14D1G1664A 2D 7DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
|
Original
|
PDF
|
M14D1G1664A
M14D1G166
m14d1g
M14D1G1664A
m14d1g16
DDRII
esmt
|
NT5CB64M16AP-CF
Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature Write Leveling 1.5V ± 0.075V JEDEC Standard Power Supply OCD Calibration 8 Internal memory banks (BA0- BA2) Dynamic ODT (Rtt_Nom & Rtt_WR) Differential clock input (CK, )
|
Original
|
PDF
|
NT5CB256M4AN
NT5CB128M8AN
NT5CB64M16AP
60-Ball
84-Ball
NT5CB64M16AP-CF
nt5cb64m16
NT5CB64M16AP-CG
NT5CB64M16AP
nanya NT5CB64M16AP
NT5CB64m
NT5CB64M16AP-BE
nt5cb64m16ap-dh
MPR 20 20 CF RESISTOR
NT5CB64M16AP-AC
|
Untitled
Abstract: No abstract text available
Text: W9712G6KB 2M 4 BANKS 16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
|
Original
|
PDF
|
W9712G6KB
|
W971GG6KB
Abstract: W971GG6KB-3 W971GG6KB-25 W971GG6KB25
Text: W971GG6KB 8M 8 BANKS 16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
|
Original
|
PDF
|
W971GG6KB
W971GG6KB-3
W971GG6KB-25
W971GG6KB25
|
Untitled
Abstract: No abstract text available
Text: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features Signal Integrity JEDEC DDR3 Compliant - Configurable DS for system compatibility
|
Original
|
PDF
|
512M8CN
256M16CP
DDR3L-1866
|
Untitled
Abstract: No abstract text available
Text: 2Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • • Marking • Configuration
|
Original
|
PDF
|
MT47H256M8
MT47H128M16
60-ball
84-ball
DDR2-800)
DDR2-667)
09005aef8441c566
|
HYB18T1G400C2FL-3
Abstract: HYB18T1G400C2F-3S
Text: March 2008 HY[B/I]18T1G400C2[C/F] L HY[B/I]18T1G800C2[C/F](L) HY[B/I]18T1G160C2[C/F](L) 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM Internet Data Sheet Rev. 1.20 Internet Data Sheet HY[B/I]18T1G[40/80/16]0C2[C/F](L) 1-Gbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.20, 2008-03
|
Original
|
PDF
|
18T1G400C2
18T1G800C2
18T1G160C2
18T1G
HYB18T1G400C2FL-3
HYB18T1G400C2F-3S
|