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    Schneider Electric LXM62DD27D21000

    Motor Drives
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    Mouser Electronics LXM62DD27D21000 1
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    RS LXM62DD27D21000 Bulk 11 Weeks 1
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    Square D by Schneider Electric LXM62DD27D21000

    Servo Drive, 3Ph, 27A, 4.3Kw, 230/400V; Power Rating:4.3Kw; No. Of Phases:Three Phase; Output Current Max:27A; Supply Frequency:50Hz/60Hz; Supply Voltage Min:207V; Supply Voltage Max:440V; Product Range:Pacdrive 3 Lexium 62 Series Rohs Compliant: Yes |Square D By Schneider Electric LXM62DD27D21000
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    Newark LXM62DD27D21000 Bulk 1
    • 1 $3123.64
    • 10 $2841.51
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    DD27D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H I L I P S / D I S C R E T E fc.^E bb53R31 ]> 0027077 Philips Semiconductors T20 «A PX Product specification Schottky barrier diodes PBYR2100CT series QUICK REFERENCE DATA FEATURES • Double diode in SMD power package • Low turn-on and high breakdown


    OCR Scan     		PDF bb53R31 PBYR2100CT PBYR280CT PBYR290CT PBYR21OOCT PBYR2100CT

    GSM jamming scheme generator

    Abstract: "IEEE 802.3" "Clause 27" BRXD12 BTXD02 APAA LUC3R04 S5241 OXCO LUC3S02 BTXD10
    Text: Preliminary Data Sheet July 1997 microelectronics group Lucent Technologies Bell Labs Innovations LUC3R04 10/100 Mbits/s Managed Repeater CMOS Integrated Circuit Features • Four single repeaters per chip allow for port mobil­ ity repeater designs similar to those based on the


    OCR Scan     		PDF LUC3R04 ATT1RX04. 100Base-TX, LUC3S02 005002b 208-Pin LUC3R04-FC GSM jamming scheme generator "IEEE 802.3" "Clause 27" BRXD12 BTXD02 APAA LUC3R04 S5241 OXCO BTXD10

    Untitled

    Abstract: No abstract text available
    Text: E2G 1 054-18-62 O K I Semiconductor MD56V62800A 4-Bank x 2,097,152-Word x 8-Bit SY N C H R O N O U S DYNAMIC RAM DESCRIPTION The MD56V62800A is a 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		PDF MD56V62800A 152-Word MD56V62800A cycles/64 b724B40

    M37704

    Abstract: No abstract text available
    Text: M IT S U B IS H I M ICROCOMPUTERS M 37704E4BXXXFP.M 37704E4BFS PROM VERSION of M 37704M 4B XXXFP DESCRIPTION APPLICATION The M37704E4BXXXFP is a single-chip microcomputer de­ signed with high-performance CMOS silicon gate technolo­ Control devices for equipment that requires motor control


    OCR Scan     		PDF 37704E4BXXXFP 37704E4BFS 37704M M37704E4BXXXFP 80-pin M37704 32K-byte 25mVrms, M37704

    GP150MHB16S

    Abstract: No abstract text available
    Text: Si GEC PLESSEY S E M I C O N D U C T O R S DS4131-5.2 G P 1 5 M H B 1 6 S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS VCES 1600V 3.3V CEfsat 150 A ^qCO NT) 300A ^qPK ) 270ns tr 590ns t, v • High Power Switching. ■ Motor Control.


    OCR Scan     		PDF DS4131-5 270ns 590ns 44lbs 70lbs 88lbs 18lbs 1500g GP150MHB16S

    TNETX3100

    Abstract: No abstract text available
    Text: TNETX15AE ADDRESS-LOOKUP DEVICE S P W S 041A - A U G U S T 1997 - R EVISED O C TO B E R 1997 • Provides up to 8K-Address Matching System • • Provides Glueless External-Address Match EAM Interface to the TN ETX3150/TN ETX3150A/TN ETX3100 Provides Direct Input/Output (DIO) Interface


    OCR Scan     		PDF TNETX15AE ETX3150/TN ETX3150A/TN ETX3100 15-ns TNETX3100

    Toshiba rdram

    Abstract: TC59R1809
    Text: TO S H IB A D IG IT A L IN TE G R A TE D CIRCUIT i N T t ^ K A t E D C IR C U IT T C 5 9 R 1 8 0 9 V K /H K TOSHIBA TFCHNICAL DATA SILICO N G> T E "C M O S TENTATIVE 2 ,0 9 7 ,152w ord x 9 - b i t Rambus DRAM INTRO DUCTIO N The TC59R1809VK/HK Rambus DRAM RDRAM is a next-generation*


    OCR Scan     		PDF TC59R1809VK/HK 500MB/s. 32-pin TC59R1809VK/H SVP32-P-1125A) TC59R1809VK/HKâ Toshiba rdram TC59R1809

    byv26c ph

    Abstract: philips diode PH 15
    Text: N AUER PHILIPS/DISCRETE 1,^53131 QDS7Q2b SbT • APX b^E » Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse


    OCR Scan     		PDF BYV26 BYV26A BYV26C BYV26D BYV26B BYV26E byv26c ph philips diode PH 15

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bRE D ^ 5 3 ^ 3 1 D027D37 3MH « A P X Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse


    OCR Scan     		PDF D027D37 BYV36 BYV36A BYV36B BYV36C BYV36E BYV36F BYV36G

    DD27D

    Abstract: land pattern for TSOP 2 50 MB257 TM 1828
    Text: 3.3V CMOS STATIC RAM 32Kx 16-BIT PRELIMINARY IDT71V008 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times — 10/12/15/20ns • One Chip Select plus one Output Enable pin


    OCR Scan     		PDF 16-BIT IDT71V008 10/12/15/20ns 44-pin IDT71V008 288-bit 910-338-207Q DD27D land pattern for TSOP 2 50 MB257 TM 1828

    me 555

    Abstract: 3tr5 active suspension MD56V62800A 270b5 D56V62800A
    Text: E2G1054-18-62 O K I Semiconductor MD56V62800A This version: Jun. 1998 4-B ank x 2,097,152-W ord x 8-Bit SYNCHRONOUS DYNAM IC RAM DESCRIPTION The MD56V62800A is a 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		PDF E2G1054-18-62 MD56V62800A 152-Word MD56V62800A cycles/64 b7E4E40 me 555 3tr5 active suspension 270b5 D56V62800A

    TNETX3100

    Abstract: DD35 TNETX15AE TNETX3150 TNETX3150A EAM02
    Text: TNETX15AE ADDRESS-LOOKUP DEVICE SPWS041 - AU G U S T 1997 • • • • • • • • Provides up to 8K-Address Matching System Provides Glueless External-Address Match EAM Interface to the TN ETX3150/TN ETX3150 A/TN ETX3100 Uses Standard Off-the-Shelf SRAMs


    OCR Scan     		PDF ETX3150/TN ETX3150 ETX3100 TNETX15AE SPWS041 S-PQFP-G144) MS-026 4040147/C TNETX3100 DD35 TNETX15AE TNETX3150 TNETX3150A EAM02

    v17805

    Abstract: No abstract text available
    Text: HM51W17805B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-462B Z Rev. 2.0 May. 30, 1996 Description The Hitachi HM51W17805B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805B offers


    OCR Scan     		PDF HM51W17805B 152-word ADE-203-462B 28-pin ns/70 v17805

    5962-9096504MTA

    Abstract: No abstract text available
    Text: Military Field Programmable Gate Arrays Features A C T 3 Features Highly Predictable Performance with 100 Percent Automatic Placement and Routing • Highest-Performance, Highest-Capacity FPGA Family Device Sizes from 1200 to 10,000 gates up to 25,000 PLD


    OCR Scan     		PDF 1200XL 20-pin Q002707 5962-9096504MTA

    Untitled

    Abstract: No abstract text available
    Text: HM51W17400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-370A Z Rev. 1.0 Nov. 17, 1995 Description The Hitachi HM51W17400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17400B offers Fast


    OCR Scan     		PDF HM51W17400B 304-word ADE-203-370A mW/360 mW/324 QQ27021

    Untitled

    Abstract: No abstract text available
    Text: P g jp i G E C PLESSEY DS4340-4.0 GP1000DHB06S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS 600V v CES v* CE Mt 2.1V 1000A ^C(CONT) 2000A ^C(PK) 290ns tr 430ns t, APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.


    OCR Scan     		PDF DS4340-4 GP1000DHB06S 290ns 430ns 44lbs 70lbs 88lbs 18lbs 1500g

    BYW 90

    Abstract: BYW97G BYW97F BYV97G
    Text: N APIER P H I L I P S / D I S C R E T E b'ìE D bbSB'iBl DQ27GbO P hilips S em ico n d u cto rs P relim inary sp ecification Fast s o ft-re co ve ry avalanche re ctifier d io d es FEA TU R E S • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse


    OCR Scan     		PDF DQ27GbO BYW97F; BYW97G BYW97F BYW 90 BYW97G BYV97G

    ADS774SF

    Abstract: No abstract text available
    Text: B U R R -B R O W N « I ADS774 1 Microprocessor-Compatible Sampling CMOS ANALOG-to-DIGITAL CONVERTER FEATURES DESCRIPTION • COMPATIBLE WITH ADC574, ADC674 AND ADC774 SOCKETS The ADS774 is a 12-bit successive approximation an alo g -to -d ig ital co n v erter using an in novative


    OCR Scan     		PDF ADS774 ADC574, ADC674 ADC774 120mW ADS774 12-bit ADC674, ADS774SF

    Untitled

    Abstract: No abstract text available
    Text: HM5116100B Series 16,777,216-word x 1-bit Dynamic Random Access Memory HITACHI ADE-203-371A Z Rev. 1.0 Nov. 10, 1995 Description The Hitachi HM5116100B is a CMOS dynamic RAM organized 16,777,216-word X 1-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116100B offers Fast Page


    OCR Scan     		PDF HM5116100B 216-word ADE-203-371A mW/385 mW/358