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    DARLINGTON BD647 Search Results

    DARLINGTON BD647 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ULS2003H/R Rochester Electronics LLC ULS2003 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    ULS2022R/B Rochester Electronics LLC ULS2022 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    PS2502L-1-A Renesas Electronics Corporation DC Input Darlington, , / Visit Renesas Electronics Corporation
    PS2502L-4-A Renesas Electronics Corporation DC Input Darlington, , / Visit Renesas Electronics Corporation
    PS2502-4-A Renesas Electronics Corporation DC Input Darlington, , / Visit Renesas Electronics Corporation

    DARLINGTON BD647 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bd648

    Abstract: bd650 bd649 BD652 BD644 BD65 BD643 BD645 BD646 BD647 BD649
    Text: BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.


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    PDF BD644/646/648/650/652 O-220 BD643, BD645, BD647, BD649 BD651 BD644 BD646 BD648 bd648 bd650 bd649 BD652 BD644 BD65 BD643 BD645 BD646 BD647

    BD648

    Abstract: transistor bd648 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS transistor bd647 BD647 B2750
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD647


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    PDF BD647 -12mA -50mA BD648 transistor bd648 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS transistor bd647 BD647 B2750

    BD645

    Abstract: bd647 BD649 darlington bd647 BD643 BD651 bd650 bd649 BD644 BD649 equivalent BD646
    Text: SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.


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    PDF BD643/645/647/649/651 O-220 BD644, BD646, BD648, BD650 BD652 BD643 BD645 BD647 BD645 bd647 BD649 darlington bd647 BD643 BD651 bd650 bd649 BD644 BD649 equivalent BD646

    BD650

    Abstract: BD646 BD648 BD644 BD652 IC 648 bd650 bd649 audio 652 6 pin ic transistor bd650 BD643
    Text: SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.


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    PDF BD644/646/648/650/652 O-220 BD643, BD645, BD647, BD649 BD651 BD644 BD646 BD648 BD650 BD646 BD648 BD644 BD652 IC 648 bd650 bd649 audio 652 6 pin ic transistor bd650 BD643

    TIC106M SCR

    Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent
    Text: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers


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    PDF O-220, OT-93 2M/TSP0904 TIC106M SCR TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent

    TIC106D equivalent

    Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
    Text: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers


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    PDF O-220, OT-93 2M/TSP0711 TIC106D equivalent TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent

    b0333

    Abstract: box53b 044E3 BOW93B b0647 BOX67A BOT63A BOT65A 2N605B B0699
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) tr Max tf Max (s) (s) 300n 500n 500n 1.2u 175 A 175 J 150 J 150 J 1.5u B.5u 300n 300n 300n 300n 5.0u 800n BOOn BOOn BOOn 150 J 175 J


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    PDF U2T201 2N6352 2S01169 2S01315 SGS121 TIP121 TIP621 MJE1102 b0333 box53b 044E3 BOW93B b0647 BOX67A BOT63A BOT65A 2N605B B0699

    B0648

    Abstract: B0648F 652f BD643F BD644F BD645F BD647F BD649F BD651F BD652F
    Text: BD644F; 646F B0648F; 650F BD652F SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington transistors in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F. QUICK REFERENCE DATA


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    PDF BD644F; B0648F; BD652F BD643F, BD645F, BD647F, BD649F BD651F. BD644F B0648 B0648F 652f BD643F BD645F BD647F BD651F BD652F

    Untitled

    Abstract: No abstract text available
    Text: J BD644F; 646F BD648F;650F BD652F V SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F. QUICK REFERENCE DATA


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    PDF BD644F; BD648F BD652F BD643F, BD645F, BD647F, BD649F BD651F. BD644F OT186.

    BD651

    Abstract: No abstract text available
    Text: BD643; BD645; BD647; BD649; ^ BD651_ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 envelope. They are intended fo r output stages in audio equipment, general amplifiers, and analogue switching


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    PDF BD643; BD645; BD647; BD649; BD651_ O-220 BD644, BD646, BD648, BD650 BD651

    BO 649

    Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
    Text: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington


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    PDF 0235bQS T-33-29 OP-66) 643/BD 645/BD BD643. 0QQ43 T-33-29 BD647 BO 649 BD 104 darlington bd 645 TOP-66 b 647 c BD 649 BD64S Q62702-D376 BD 104 NPN

    Untitled

    Abstract: No abstract text available
    Text: BD644F;646F BD648F; 650F BD652F PHILIPS INTERNATIONAL 5bE D 711005b 0042^54 bDb M P H I N T -33~ 3j SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F.


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    PDF BD644F BD648F; BD652F 711005b OT186 BD643F, BD645F, BD647F, BD649F BD651F.

    BD645

    Abstract: BD649 BD647 darlington bd647 D 17275 n69s BD643 B13 transistors
    Text: G DI E SOLI» STATE 3875081 G E SOLID D[f| 3Û7S0Ô1 0017573 L> 0 1 E ~ 17273 STATE ~ _ Darlington Power Transistore File Number 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts


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    PDF BD643, BD645, BD647, BD649 O-22QAB RCA-BD643, BD649 1500b BD645 BD647 darlington bd647 D 17275 n69s BD643 B13 transistors

    652f

    Abstract: J578 BD644F BD647F BD652F BD643F LG tft circuit diagram BD645F BD648F BD649F
    Text: BD644F; 646F BD648F;650F BD652F J PHILIPS INTERNATIONAL 5bE » 711005b 0042^54 bOb M P H I N T-33-3J SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope w ith an electrically insulated m ounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F.


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    PDF BD644F; BD648F BD652F 711002b OT186 BD643F, BD645F, BD647F, BD649F BD651F. 652f J578 BD644F BD647F BD652F BD643F LG tft circuit diagram BD645F

    B0645

    Abstract: BD85 transistor bd647 b0652 BD651 BD645 transistor bd646 BD649 80651 bd851
    Text: BD643; BD645; BD647; BD649; Ì B D 6 5 1 _ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T0-220 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching


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    PDF BD643; BD645; BD647; BD649; BD651 T0-220 BD644, BD646, BD648, BD650 B0645 BD85 transistor bd647 b0652 BD651 BD645 transistor bd646 BD649 80651 bd851

    50t65

    Abstract: bd650 BD644
    Text: BD644; 646; 648 BD650; 652 J SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TO-220 envelope and intended fo r applications such as audio output stages, switching, and general amplifiers.


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    PDF BD644; BD650; O-220 BD643, BD645, BD647, BD651. BD644 50t65 bd650 BD644

    D 1991 AR

    Abstract: lg bd645 transistor d 1991 ar BD644 philips BD650 BD643 B0645 BD644 B0643 BD649 philips
    Text: BD644; 646; 648 _ jj^ BD650; 652 PHILIPS INTERNATIONAL SbE D • 711GÛ2b 7b7 M P H I N 'V - 3 3 - 3 SILICON DARLINGTON POWER TRANSISTORS PN P epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TCJ-220


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    PDF BD644; BD650 T-33-3Ã TCJ-220 BD643, BD645, BD647, BD649 BD651. BD644 D 1991 AR lg bd645 transistor d 1991 ar BD644 philips BD643 B0645 B0643 BD649 philips

    transistor BD6

    Abstract: bd645 transistor BD643 H 649 A transistor
    Text: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching


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    PDF BD643; BD645; BD647; BD649; BD651 7110fi2b BD644, BD646, BD648, BD650 transistor BD6 bd645 transistor BD643 H 649 A transistor

    D 1991 AR

    Abstract: BD644 transistor 648 transistor bd650 transistor bd644 b0651 BD65 BD651 lms-21 BD645
    Text: J BD644; 646; 648 ^B P 6 5 0 ; 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T0-220 envelope and intended for applications such as audio output stages, switching, and general amplifiers.


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    PDF BD644; BD650; T0-220 BD643, BD645, BD647, BD649 BD651. BD644 D 1991 AR transistor 648 transistor bd650 transistor bd644 b0651 BD65 BD651 lms-21 BD645

    lg bd645

    Abstract: darlington bd 645 BD649 philips bd649 PNP transistor BD649 B0645 BD645 BD643 BD646 BD647
    Text: BD643; BD645; BD647; BD649; BD651 PHILIPS I N T ERNATIONAL 5bE D • 7110fl2b 0 0 4 2 ^ 741 « R H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching


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    PDF BD643; BD645; BD647; BD649; BD651 7110fl2b T0-220 BD644, BD646, BD648, lg bd645 darlington bd 645 BD649 philips bd649 PNP transistor BD649 B0645 BD645 BD643 BD646 BD647

    D 1991 AR

    Abstract: BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode
    Text: BD644; 646; 648 _ j \ BD650^652_ PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b □ D M E C144 7 b 7 H P H I N T -33-31 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T 0 -2 2 0


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    PDF BD644; BD650 711002b BD643, BD645, BD647, BD651. BD644 BD650; D 1991 AR BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode

    BD 649

    Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
    Text: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington


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    PDF fl23SLQS T-33-29 OP-66) 643/BD 645/BD BD647. BD843, BD645. BD647, BD 649 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65

    darlington bd647

    Abstract: TL 2262 lg bd645 tic 2260 BD649
    Text: File Num ber 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A O A pplications: t Features: m Power switching Hammer drivers • Operates from IC without predriver Series and shunt


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    PDF BD643, BD645, BD647, BD649 O-22QAB BD649 220AB darlington bd647 TL 2262 lg bd645 tic 2260

    BD649

    Abstract: BD647 TL 2262 BD64S 00m0
    Text: File Number 1241 BD643, BD645, BD647, BD649 HARRIS SEMTCOND SECTOR SbE ]> 4302271 OOMObflZ £21 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A r o Applications: Features: t m Power switching • Operates from 1C without predrlver ■ Hammer drivers


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    PDF BD643, BD645, BD647, BD649 TQ-220AB BD649 BD647 TL 2262 BD64S 00m0