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    BD649F Search Results

    BD649F Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD649F Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BD649F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD649F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD649F Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF

    BD649F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BD649F Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.750


    Original
    PDF BD649F Freq100M

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original
    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    Untitled

    Abstract: No abstract text available
    Text: BD644F;646F BD648F; 650F BD652F PHILIPS INTERNATIONAL 5bE D 711005b 0042^54 bDb M P H I N T -33~ 3j SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F.


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    PDF BD644F BD648F; BD652F 711005b OT186 BD643F, BD645F, BD647F, BD649F BD651F.

    bd643f

    Abstract: No abstract text available
    Text: BD643F; 645F; 647F BD649F; 651F y SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistorsinaSOT186 envelope with an electrically insulated mounting base. PNP complements are BD644F, BD646F, BD648F, BD650F and BD652F. QUICK R E F E R E N C E D A T A


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    PDF BD643F; BD649F; transistorsinaSOT186 BD644F, BD646F, BD648F, BD650F BD652F. BD643F bd643f

    BD646F

    Abstract: BD649F BD650F BD643F BD648F BD652F 651F
    Text: BD643F;645F;647F BD649F: 651F_ PHILIPS 711002b 5bE D INTERNATIONAL OOME^b b'iü • PHIN SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements a re B D 6 4 4 F , B D 646F, B D 648F, BD 650F and B D 652F.


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    PDF BD643F BD649F: 65-1F_ 711002b OT186 areBD644F, BD646F, BD648F, BD650F BD652F. BD646F BD649F BD648F BD652F 651F

    Untitled

    Abstract: No abstract text available
    Text: J BD644F; 646F BD648F;650F BD652F V SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F. QUICK REFERENCE DATA


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    PDF BD644F; BD648F BD652F BD643F, BD645F, BD647F, BD649F BD651F. BD644F OT186.

    651F

    Abstract: BD649F BD650F BD643F BD644F BD646F BD648F BD652F bd64 IC/651F
    Text: BD643F; 645F; 647F BD649F; 651F SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistors in a SOT 186 envelope w ith an electrically insulated mounting base. PNP complements are BD644F, BD646F, BD648F, BD650F and BD652F. QUICK REFERENCE D A T A


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    PDF BD643F; BD649F; BD644F, BD646F, BD648F, BD650F BD652F. BD643F 344Già 651F BD649F BD644F BD646F BD648F BD652F bd64 IC/651F

    652f

    Abstract: J578 BD644F BD647F BD652F BD643F LG tft circuit diagram BD645F BD648F BD649F
    Text: BD644F; 646F BD648F;650F BD652F J PHILIPS INTERNATIONAL 5bE » 711005b 0042^54 bOb M P H I N T-33-3J SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope w ith an electrically insulated m ounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F.


    OCR Scan
    PDF BD644F; BD648F BD652F 711002b OT186 BD643F, BD645F, BD647F, BD649F BD651F. 652f J578 BD644F BD647F BD652F BD643F LG tft circuit diagram BD645F

    ci-42

    Abstract: No abstract text available
    Text: BD643F; 645F; 647F BD649F: 651F_ P hilips sbE d international • GOME^b b « phin SILICON DARLINGTON POWER TRAN SISTO RS N PN silicon Darlington transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. PNP complements are B D 6 44 F , B D 6 46 F , B D 6 48 F , B D 6 5 0 F and BD 6 52 F .


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    PDF BD643F; BD649F: BD643F BD649F; 711005b T-33-29 ci-42

    B0648

    Abstract: B0648F 652f BD643F BD644F BD645F BD647F BD649F BD651F BD652F
    Text: BD644F; 646F B0648F; 650F BD652F SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington transistors in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F. QUICK REFERENCE DATA


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    PDF BD644F; B0648F; BD652F BD643F, BD645F, BD647F, BD649F BD651F. BD644F B0648 B0648F 652f BD643F BD645F BD647F BD651F BD652F

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


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    PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    philips BDV64A

    Abstract: T1P121 BDV66A PHILIPS SEMICONDUCTOR bdv65a philips 200v 4A pnp BDV65 PHILIPS SEMICONDUCTOR philips TIP147 B0646 B0648 BU807 PHILIPS SEMICONDUCTOR
    Text: N AflER P H I L I P S / D I S C R E T E E5E D • bb53T31 D O ltiE l? b Hi T-& 1 -3-*? Power Devices 39 LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN TIP110 TIP111 TIP112 BD675 BD677 BD679 BD681 BD683 PNP fC (D C )0 ) V CEO


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    PDF TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD675 BD677 BD679 philips BDV64A T1P121 BDV66A PHILIPS SEMICONDUCTOR bdv65a philips 200v 4A pnp BDV65 PHILIPS SEMICONDUCTOR philips TIP147 B0646 B0648 BU807 PHILIPS SEMICONDUCTOR