BAY84
Abstract: BAY85S D1850 SDBAX12 bay85 BAS21 A82 d53 MARKING CODE SOT23
Text: SWITCHING DIODES SOT23 PACKAGE Ptot=350mW VR Part No. Marking V BAL99 JF 70 BAR99 JG 70 BAS16 A6 75 BAS19 A8 100 BAS20 A81 150 BAS21 A82 200 BAS29 L20 90 BAS31 L21 90 BAS35 L22 90 BAV70 A4 70 BAV99 A7 70 BAW56 A1 70 BAY84 D49 90 BAY85 D53 240 BAY85S DB6 240
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350mW
BAL99
BAR99
BAS16
BAS19
BAS20
BAS21
BAS29
BAS31
BAS35
BAY84
BAY85S
D1850
SDBAX12
bay85
BAS21 A82
d53 MARKING CODE SOT23
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DIODE D28 06
Abstract: DIODE D38 -06 DIODE D38 06 DIODE D28 DIODE D28 04 10-FZ062TA030FB02-P983D38 p983
Text: 10-F0062TA030 FB/FB03)-P983(D19/D49) preliminary datasheet flow PFC 0 600 V/ 2 x 15 A / 50 kHz Features flow 0 housing ● Vincotech clip-in housing ● Compact and low inductance design ● Suitable for Interleaved topology
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10-FZ062TA030
FB/FB01/FB02/FB03
-P983
D18/D28/D38/D48)
10-F0062TA030
FB/FB03
D19/D49)
062TA030FB
FZ062TA030FB01
DIODE D28 06
DIODE D38 -06
DIODE D38 06
DIODE D28
DIODE D28 04
10-FZ062TA030FB02-P983D38
p983
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Untitled
Abstract: No abstract text available
Text: 4 MEG x 4 FPM DRAM TECHNOLOGY, INC. MT4LC4M4B1, MT4C4M4B1 MT4LC4M4A1, MT4C4M4A1 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • State-of-the-art, high-performance, low power CMOS silicon-gate process • Single power supply +3.3V ±0.3V or +5V ±10%
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24/26-Pin
NC/A11
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Untitled
Abstract: No abstract text available
Text: Central CMPD5001 CMPD5001S TM Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring extremely high
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CMPD5001
CMPD5001S
OT-23
100mA
200mA
400mA
26-September
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D49 diode
Abstract: sot 23 marking code R4 CMPD5001 CMPD5001S DIODE MARKING CODE SOT23
Text: CMPD5001 CMPD5001S SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching
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CMPD5001
CMPD5001S
CMPD5001
OT-23
100mA
200mA
400mA
25-January
D49 diode
sot 23 marking code R4
CMPD5001S
DIODE MARKING CODE SOT23
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Untitled
Abstract: No abstract text available
Text: Training Products Section Index SECTION INDEX Click on any section below to go that portion of the catalog Lockout Devices Training Products . . . . . . . . . . . . . . . . . . A1 Padlocks, Hasps & Accessories Lockout Devices and Kits . . . . . . . . . . B1
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SA-NCCB51
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Untitled
Abstract: No abstract text available
Text: CMPD5001 CMPD5001S SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching
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CMPD5001
CMPD5001S
CMPD5001
OT-23
100mA
200mA
400mA
25-January
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D49 transistor
Abstract: CMPD5001 CMPD5001S diode da2
Text: Central CMPD5001 CMPD5001S TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE Description: The Central Semiconductor CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for
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CMPD5001
CMPD5001S
CMPD5001
OT-23
100mA
200mA
400mA
23-June
D49 transistor
CMPD5001S
diode da2
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diode da2
Abstract: IRIF
Text: Central CMPD5001 CMPD5001S TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for
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CMPD5001
CMPD5001S
OT-23
100mA
200mA
400mA
diode da2
IRIF
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FEDERAL PACIFIC BREAKER
Abstract: 1 piece BALL VALVE MINIATURE CIRCUIT BREAKER maintenance instruction PVS0710C180Y astm d16 ISO pneumatic standards symbols PLD80 print Head Ink Jet Driver pneumatic system used in train Federal Pacific
Text: Training Products Section Index SECTION INDEX Click on any section below to go that portion of the catalog Lockout Devices Training Products . . . . . . . . . . . . . . . . . . A1 Padlocks, Hasps & Accessories Lockout Devices and Kits . . . . . . . . . . B1
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866-4utions
SA-ELCB10
SA-NCCB51
FEDERAL PACIFIC BREAKER
1 piece BALL VALVE
MINIATURE CIRCUIT BREAKER maintenance instruction
PVS0710C180Y
astm d16
ISO pneumatic standards symbols
PLD80
print Head Ink Jet Driver
pneumatic system used in train
Federal Pacific
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CMPD5001
Abstract: CMPD5001S
Text: Central CMPD5001 CMPD5001S TM Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load
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CMPD5001
CMPD5001S
CMPD5001
OT-23
150oC
100mA
200mA
400mA
CMPD5001S
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D70 SOT23
Abstract: D46 diode dual zener MARKING D53 SOT23 marking D58 AZ23C3V0 d54 marking marking code d47 MARKING D53 PART NUMBER MARKING d45
Text: AZ23-V-G-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • Dual silicon planar Zener diodes, common anode • The Zener voltages are graded according to the international E 24 standard • The parameters are valid for both diodes in one case. ΔVZ and ΔRzj of the two
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AZ23-V-G-Series
2002/95/EC
2002/96/EC
GS18/10K
10K/box
GS08/3K
15K/box
18-Jul-08
D70 SOT23
D46 diode
dual zener
MARKING D53 SOT23
marking D58
AZ23C3V0
d54 marking
marking code d47
MARKING D53
PART NUMBER MARKING d45
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MT4C4M4
Abstract: No abstract text available
Text: 4 MEG X 4 FPM DRAM M IC R O N n RAM MT4LC4M4B1, MT4C4M4B1 MT4LC4M4A1, MT4C4M4A1 U r tM IV I FEATURES • Industry-standard x4 pinout, timing, functions and packages • State-of-the-art, high-performance, low power CMOS silicon-gate process • Single power supply +3.3V ±0.3V or +5V +10%
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OCR Scan
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PDF
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24/26-Pin
MT4C4M4
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4c4m4a
Abstract: Y7A MARKING
Text: 4 MEG X 4 FPM DRAM I^ IIC R C IN MT4LC4M4B1,MT4C4M4B1 MT4LC4M4A1,MT4C4M4A1 n R AM ^ r » »1 FEATURES • Industry-standard x4 pinout, timing, functions and packages • State-of-the-art, high-performance, low power CMOS silicon-gate process • Single power supply +3.3V ±0.3V or +5V ±10%
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OCR Scan
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PDF
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24/26-Pin
4c4m4a
Y7A MARKING
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338 sot-23
Abstract: D49 diode LF MARKING CODE 338 marking code LF400
Text: Central“ CMPD5001 CMPD5001S Semiconductor Corp. SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for
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OCR Scan
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PDF
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CMPD5001
CMPD5001S
OT-23
CMPD5001S
CPD41
338 sot-23
D49 diode
LF MARKING CODE
338 marking code
LF400
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CMSH3-40
Abstract: CMPS5064 CMPD1001A marking db6 BCW71 AG marking 1FF MARKING CODE 8Y marking code k9 MARKING CODE 9k 6K MARKING CODE
Text: Marking Codes Marking Code Part Number Marking Code Part Number Marking Code Part Number 02D CMPS5064 5G BC808.40 91E CMPZ4706 1A BC846A 6A BC817.16 91F CMPZ4707 1B BC846B 6B BC817.25 91G CMPZ4708 1E BC847A 6B CMPF5484 91H CMPZ4709 1F BC847B 6B1 CMPF5485 91J
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CMPS5064
BC846A
BC846B
BC847A
BC847B
CMPT5551
BC847C
BC848A
BC848B
BC848C
CMSH3-40
CMPD1001A
marking db6
BCW71 AG
marking 1FF
MARKING CODE 8Y
marking code k9
MARKING CODE 9k
6K MARKING CODE
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Untitled
Abstract: No abstract text available
Text: Central’ CMPD5001 CMPD5001S Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load
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OCR Scan
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PDF
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CMPD5001
CMPD5001S
CMPD5001
OT-23
100mA
200mA
400mA
|
Untitled
Abstract: No abstract text available
Text: Central" CMPD5001 CMPD5001S semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load
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OCR Scan
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PDF
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CMPD5001
CMPD5001S
CMPD5001
OT-23
200mA
400mA
100ii
|
Untitled
Abstract: No abstract text available
Text: Central CMPD5001 CMPD5001S Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load
|
OCR Scan
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PDF
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CMPD5001
CMPD5001S
OT-23
CMPD5001S
100mA
200mA
400mA
CMPD5001
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marking "3AA"
Abstract: CMPD5001 CMPD5001S
Text: Central CMPD5001 CMPD5001S S em ico n d u cto r Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed forswitching inductive load
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OCR Scan
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PDF
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CMPD5001
CMPD5001S
OT-23
100mA
200mA
400mA
marking "3AA"
CMPD5001S
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bay85
Abstract: BAX12 BAY85S AT25 MA marking
Text: S G S-THOHSON 71C D fl 7 ^ 2 ^ 3 7 DQDS137 4 | SEMICONDUCTORS GENERAL PURPOSEAND SMHTEUffim m VR Vr m * lF AV (V) (mA) max (V) (mA) CHARACTERISTICS A T 25 °C Ir @ Vr Ir @ Vr Tamb = 150 °C max max max (nA) (V) (| iA) (V) (pF) BAL 99 70 70 1,3 100 2500 70
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DQDS137
bas16
bax12
bay85
baw56
bav74
kbav70
kbav99
kbay85s
bay85
BAX12
BAY85S
AT25
MA marking
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Untitled
Abstract: No abstract text available
Text: Central CMPD5001 CMPD5001S Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load
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OCR Scan
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PDF
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CMPD5001
CMPD5001S
OT-23
CMPD5001S
100mA
CMPD5001
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Untitled
Abstract: No abstract text available
Text: Central CMPD5001 CMPD5001S TM Sem i c o n d u c t o r C o r p . HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designedforsw itching inductive load
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OCR Scan
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PDF
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CMPD5001
CMPD5001S
OT-23
CMPD5001S
100mA
200mA
400mA
CMPD5001
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BAX12
Abstract: BAY85S MARKING D53 marking IAY marking JB diode BAV70 BAV74 BAW56 BAT18DK Thomson-CSF diodes
Text: general purpose and switching diodes 1* diodes d'usage général et de com m utation Types •f AV VF @ lF |R @ V R V RM* (V) (mA) max (V) (mA) max (nA) (V) BAL74 50 70 1 100 100 50 BAL 99 70 70 1,3 100 2500 70 BAR 74 SD 914 BAS 16 SD BAX12 50 75 75 90(3)
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BAX12
BAX12
BAY85S
MARKING D53
marking IAY
marking JB diode
BAV70
BAV74
BAW56
BAT18DK
Thomson-CSF diodes
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