1n4148 die chip
Abstract: 1N4150 DIE 1N4148 chip 1n4148 die WN diode CPD41-1N4150-CT DIE CHIP 51 BAS56 CPD41 CPD93V
Text: PCN # 109 Notification Date: 21 April 2009 mailto:[email protected] http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Chip process CPD41, High Current Switching Diode discrete semiconductors, wafers, and die in chip
|
Original
|
PDF
|
CPD41,
CPD41
CPD93V
CPD41-BAS56-WN
CPD41-CEN923-CT
CPD41-CMPD4150-WR
CPD41-CMPD4150-WS
CPD41-CMPD914-WN
CPD41-1N3600-WN
1n4148 die chip
1N4150 DIE
1N4148 chip
1n4148 die
WN diode
CPD41-1N4150-CT
DIE CHIP 51
BAS56
|
1N3600
Abstract: 1N4150 CMPD4150 CPD41 1n3600 die
Text: PROCESS CPD41 Central Switching Diode TM Semiconductor Corp. High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization
|
Original
|
PDF
|
CPD41
1N3600
1N4150
CMPD4150
1N3600
1N4150
CMPD4150
CPD41
1n3600 die
|
1N3600
Abstract: 1N4150 DIE diode 29 DIODE R3 1N4150 CMPD4150 CPD41 1n3600 die
Text: PROCESS CPD41 Switching Diode High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
|
Original
|
PDF
|
CPD41
1N3600
1N4150
CMPD4150
25-August
1N3600
1N4150 DIE
diode 29
DIODE R3
1N4150
CMPD4150
CPD41
1n3600 die
|
1N3600
Abstract: 1N4150 DIE 1N4150 CMPD4150 CPD41 1n3600 die
Text: PROCESS CPD41 Switching Diode High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19.7 x 19.7 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
|
Original
|
PDF
|
CPD41
1N3600
1N4150
CMPD4150
22-March
1N3600
1N4150 DIE
1N4150
CMPD4150
CPD41
1n3600 die
|
CPA4
Abstract: Jumper JP2e LEDTX CPD14 A41 transformer PCD-15 a4510 CPD11 MCS 96 users manual CPA17
Text: ASSP CMOS DK86967 Users Guide Table of Contents List of Figures Introduction .3 Design Kit DK86967-ISA Schematic .3 Board Configurations .5
|
Original
|
PDF
|
DK86967
DK86967-ISA
DK86967-PCC
CPA4
Jumper JP2e
LEDTX
CPD14
A41 transformer
PCD-15
a4510
CPD11
MCS 96 users manual
CPA17
|
Untitled
Abstract: No abstract text available
Text: Central BAS56 Semiconductor Corp. DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 con sists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an
|
OCR Scan
|
PDF
|
BAS56
OT-143
CPD41
OT-143
|
Untitled
Abstract: No abstract text available
Text: Central CMHD4150 Semiconductor Corp. SURFACE MOUNT HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD4150 type is a high speed silicon switching diode man ufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed
|
OCR Scan
|
PDF
|
CMHD4150
OD-123
100mA
200mA
CPD41
31-October
OD-123
|
marking code fs 1 sot 323
Abstract: R5 MARKING CODE diode l22
Text: Central“ CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for
|
OCR Scan
|
PDF
|
CMPD1001
CMPD1001A
CMPD1001S
OT-23
CMPD1001S
OPD1001S
marking code fs 1 sot 323
R5 MARKING CODE
diode l22
|
Untitled
Abstract: No abstract text available
Text: Central" CLL4150 Semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL4150 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in a hermetically sealed glass surface mount pack
|
OCR Scan
|
PDF
|
CLL4150
OD-80
100mA
200mA
100i2,
CPD41
26-September
OD-80
|
diode MARKING CODE 107
Abstract: No abstract text available
Text: Central" BAS56 Sem iconductor Corp. DUAL HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with
|
OCR Scan
|
PDF
|
BAS56
OT-143
CPD41,
13-November
OT-143
diode MARKING CODE 107
|
Untitled
Abstract: No abstract text available
Text: Central" CMPD4150 Semiconductor Corp. SURFACE MOUNT HIGH CURRENT, HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4150 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package,
|
OCR Scan
|
PDF
|
CMPD4150
OT-23
100i2,
CPD41
CMPD4150
OT-23
|
338 sot-23
Abstract: D49 diode LF MARKING CODE 338 marking code LF400
Text: Central“ CMPD5001 CMPD5001S Semiconductor Corp. SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for
|
OCR Scan
|
PDF
|
CMPD5001
CMPD5001S
OT-23
CMPD5001S
CPD41
338 sot-23
D49 diode
LF MARKING CODE
338 marking code
LF400
|
CP592
Abstract: cmhd3595 cmkt5088 PTA44 z2l4 ut3906 KT2907A KT2207 CMXDM7002A PT3904
Text: Characteristic Curve maex Central Part # Central Process# 2N7002 BAS56 BCX51 thru BCX53 BCX54 thru B CX56 BZX84C2V4 thru BZX84C6V2 BZX84C6V8 thru BZX84C51 CBCP68 CBCP69 CBCX68 CBCX69 CCLH M 080 thru CCLH M 150 CCLM 0035 thru CCLM 5750 C JD 31C CJD 32 C CJD 41 C
|
OCR Scan
|
PDF
|
2N7002
BAS56
BCX51
BCX53
BCX54
BZX84C2V4
BZX84C6V2
BZX84C6V8
BZX84C51
CBCP68
CP592
cmhd3595
cmkt5088
PTA44
z2l4
ut3906
KT2907A
KT2207
CMXDM7002A
PT3904
|
Untitled
Abstract: No abstract text available
Text: Typical Electrical Characteristic Curves Page Page Characteristic Curve Index . . CP108 . . CP117 . . CP147 . .
|
OCR Scan
|
PDF
|
CP108
CP117
CP147
CP176
CP188
CP191
CP192
CP195
CP206
CP207
|
