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    D2012 Search Results

    D2012 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    G874D201202CEU Amphenol Communications Solutions Mini power, Vertical, Dual row, 4.2mm pitch, 20 positions , 100u\\ Tin, 3.50mm tail length, LCP, Natural , TRAY Visit Amphenol Communications Solutions
    SF Impression Pixel

    D2012 Price and Stock

    Kingbright APTD2012LSURCK

    LED RED CLEAR 2012 SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APTD2012LSURCK Cut Tape 35,340 1
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    APTD2012LSURCK Digi-Reel 35,340 1
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    APTD2012LSURCK Reel 33,000 3,000
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    Mouser Electronics APTD2012LSURCK 16,918
    • 1 $0.35
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    • 100 $0.157
    • 1000 $0.094
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    TTI APTD2012LSURCK Reel 15,000 3,000
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    Sager APTD2012LSURCK 3,000
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    Kingbright APTD2012SF4C

    INFRARED EMITTING DIODE
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    DigiKey APTD2012SF4C Cut Tape 18,833 1
    • 1 $0.86
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    APTD2012SF4C Digi-Reel 18,833 1
    • 1 $0.86
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    APTD2012SF4C Reel 18,000 3,000
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    Walsin Technology Corporation WLBD2012HCU600TH

    FERRITE BEAD 60 OHM 0805 1LN
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    DigiKey WLBD2012HCU600TH Cut Tape 7,906 1
    • 1 $0.1
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    WLBD2012HCU600TH Digi-Reel 7,906 1
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    WLBD2012HCU600TH Reel 4,000 4,000
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    TDK Corporation MLD2012SR47TTD25

    FIXED IND 470NH 1.2A 120MOHM SMD
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    DigiKey MLD2012SR47TTD25 Reel 4,000 4,000
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    MLD2012SR47TTD25 Cut Tape 4,000 1
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    MLD2012SR47TTD25 Digi-Reel 4,000 1
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    Kingbright APTD2012F3C

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    DigiKey APTD2012F3C Digi-Reel 493 1
    • 1 $0.6
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    APTD2012F3C Cut Tape 493 1
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    • 10 $0.352
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    Sager APTD2012F3C
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    D2012 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D 20 12 Gedore Torque SOCKET 1/4"" 12 MM Original PDF
    D2012 Unknown Si NPN TRANSISTOR Original PDF
    D 20 1/2AF Gedore Torque SOCKET 1/4"" 1/2"" Original PDF
    D2012UK Semelab Metal Gate RF Silicon FET Original PDF
    D2012UK Semelab GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz SINGLE ENDED Original PDF
    D2012UK Unknown Shortform Datasheet & Cross References Data Short Form PDF

    D2012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9507 marking

    Abstract: D2012 transistor d2012
    Text: SAW Bandpass Filter 203651B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		PDF 203651B D2012 04A001 NM3017-CS02 9507 marking D2012 transistor d2012

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 241904B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2


    Original     		PDF 241904B D2012 06A001 NM6002-CS01 D2012

    D2012

    Abstract: 88621
    Text: SAW Bandpass Filter 202174C 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1


    Original     		PDF 202174C D2012 05A001 NM5014-CS02 D2012 88621

    D2012

    Abstract: transistor d2012 T D2012 transistor d2012 T D2012 D2012
    Text: SAW Bandpass Filter 242002B 1. Features IF bandpass filter High attenuation Single-ended operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters


    Original     		PDF 242002B D2012 08A001 NM8047-CS01 D2012 transistor d2012 T D2012 transistor d2012 T D2012 D2012

    25160

    Abstract: D2012
    Text: SAW Bandpass Filter 251601B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		PDF 251601B D2012 04A001 NM3032-CS03 25160 D2012

    10840

    Abstract: D2012
    Text: SAW Bandpass Filter 252602B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters


    Original     		PDF 252602B D2012 06A001 NM6019-CS01 10840 D2012

    NM4002-CS01

    Abstract: D2012
    Text: SAW Bandpass Filter 270802B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		PDF 270802B D2012 04A001 NM4002-CS01 NM4002-CS01 D2012

    D2012

    Abstract: 11515DB
    Text: SAW Bandpass Filter 203629B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		PDF 203629B D2012 04A001 203SWR NI2029-CS03 D2012 11515DB

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 253004B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -30℃ ~ 80℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		PDF 253004B D2012 06A001 NM6028-CS01 D2012

    20PF

    Abstract: D2012 252101
    Text: SAW Bandpass Filter 252101B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters


    Original     		PDF 252101B D2012 06A001 NM6018-CS01 20PF D2012 252101

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 201096B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		PDF 201096B D2012 04A001 NI0033-CS04 D2012

    09310

    Abstract: 7686 D2012
    Text: SAW Bandpass Filter 203608B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		PDF 203608B D2012 04A001 DS4018-CS02 09310 7686 D2012

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 253010B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated


    Original     		PDF 253010B D2012 09A001 CENTER125. NM9023-CS01 D2012

    D2012

    Abstract: 61M10
    Text: SAW Bandpass Filter 203649B G 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40ଇ ~ 85ଇ Electrostatics Sensitive Device ESD Package : D2012 ^U]•WUY 1 4 Base : Fe(SPCC), Au plating over Ni plated


    Original     		PDF 203649B D2012 421-809G 04A001 NW4012-CS01 D2012 61M10

    D2012

    Abstract: 593790
    Text: SAW Bandpass Filter 233004B 1. Features IF bandpass filter High attenuation Single-ended operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Dimensions shown are nominal in millimeters


    Original     		PDF 233004B D2012 08A001 NM8004-CS01 D2012 593790

    transistor d2012

    Abstract: D2012
    Text: SAW Bandpass Filter 242003B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2


    Original     		PDF 242003B D2012 06A001 NM6015-CS01 transistor d2012 D2012

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 221904B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated


    Original     		PDF 221904B D2012 07A001 NM7037-CS01 D2012

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 250506B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2


    Original     		PDF 250506B D2012 06A001 CENTER140. NW6001-CS01 D2012

    transistor D2012

    Abstract: No abstract text available
    Text: TetraFET D2012UK.04 METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 450mW Average 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D2012UK 450mW transistor D2012

    transistor d2012

    Abstract: d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012
    Text: D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF D2012 TRANSISTOR--D2012 transistor d2012 d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012

    D2012

    Abstract: No abstract text available
    Text: D2012 YOUDA TRANSISTOR SI NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF D2012 D2012

    D2012UK

    Abstract: No abstract text available
    Text: TetraFET D2012UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D2012UK D2012UK

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 201532B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		PDF 201532B D2012 04A001 201RT NM3009-CS02 D2012

    8930

    Abstract: D2012
    Text: SAW Bandpass Filter 203624B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		PDF 203624B D2012 04A001 203SWR NI1016-CS02 8930 D2012