Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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D1806
Abstract: 2SK3113B 2SK3113B-S15-AY 2SK3113B-ZK-E2-AY transistor types full 2SK3113B-ZK-E1-AY MP 6102
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
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2SK3113B
2SK3113B
2SK3113B-S15-AY
-S27-AY
O-251
D1806
2SK3113B-S15-AY
2SK3113B-ZK-E2-AY
transistor types full
2SK3113B-ZK-E1-AY
MP 6102
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK3114B-S17-AY
Abstract: 2SK3114B
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3114B is N-channel MOS FET device that features a low PART NUMBER gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC
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2SK3114B
2SK3114B
2SK3114B-S17-AY
O-220
O-220
O-220)
2SK3114B-S17-AY
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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MCP67MV
Abstract: RTS5117 MCP67MV- A2 12VSUS IT8511TE D1703 D1804 D1803 asus F9DC
Text: 5 4 3 2 1 F9DC BLOCK DIAGRAM THERMAL SENSOR G781 BATTERY TYPE Page 5 D D 3S1P 3S2P FAN CTRL Page 5 AC & BAT CON Page 47 CPU S1g1 GDDR2 16Mx16 x4 DDR2 16M*16-2.5 1.8V Page42 INFINEON DDR2 SDRAM 667MHz Page2,3,4 DDR2 667 SODIMM X2 +1.8V +0.9VS Page11,12,13
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16Mx16
Page42
Page17
Page18
667MHz
Page11
G3-64
Page40
MCP67MD
Page24
MCP67MV
RTS5117
MCP67MV- A2
12VSUS
IT8511TE
D1703
D1804
D1803
asus
F9DC
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M51VA
Abstract: IT8512E-L C4469 U4001D asus 2sc8802 25C0401 Q3705 C4477 G780
Text: A B C D E F6Ve SCHEMATIC Revision 1.0 1 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 CPU-PENRYN 1 CPU-PENRYN(2) CPU CAP, Thermal Senor
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ICS9LPR363
ISL6227
SI4800DY
MAX8632
ISL6262C
M51VA
IT8512E-L
C4469
U4001D
asus
2sc8802
25C0401
Q3705
C4477
G780
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c3148
Abstract: it8511te D8802 asus 2C1208 RAY 33A A23 851-1 diode C1108 d1902 C3152
Text: A B C D E F6E SCHEMATIC Revision 1.10 1 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 CPU-MEROM 1 CPU-MEROM(2) CPU CAP, Thermal Senor
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ICS9LPR363CGLF
-965GM
ISL6227
PMN45EN
MAX8632
c3148
it8511te
D8802
asus
2C1208
RAY 33A
A23 851-1 diode
C1108
d1902
C3152
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK3116B-S19-AY
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3116B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3116B is N-channel MOS FET device that features a PART NUMBER low gate charge and excellent switching characteristics, and 2SK3116B-S19-AY
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2SK3116B
2SK3116B
2SK3116B-S19-AY
O-220AB
MP-25)
O-263
MP-25ZK)
2SK3116B-ZK-E1-AY
O-220AB)
2SK3116B-S19-AY
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a PART NUMBER low gate charge and excellent switching characteristics, and 2SK3113B-S15-AY
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2SK3113B
2SK3113B
2SK3113B-S15-AY
O-251
O-252
2SK3113B-ZK-E1-AY
O-251)
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a PART NUMBER low gate charge and excellent switching characteristics, and 2SK3113B-S15-AY
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Original
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2SK3113B
2SK3113B
2SK3113B-S15-AY
O-251
O-252
2SK3113B-ZK-E1-AY
O-251)
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2SK3113B
Abstract: D1806 2SK3113B-S15-AY 2SK3113B-ZK-E1-AY 2SK3113B-ZK-E2-AY
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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D1806
Abstract: 2SK3116B-S19-AY 2SK3116B-ZK-E1-AY MP-25
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK3114B
Abstract: 2SK3114B-S17-AY 2sk3114 D1806
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3114B is N-channel MOS FET device that features a low PART NUMBER gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC
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Original
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2SK3114B
2SK3114B
2SK3114B-S17-AY
O-220
O-220)
O-220ems,
2SK3114B-S17-AY
2sk3114
D1806
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2SK3115B
Abstract: 2SK3115B-S17-AY 2SK3115 2sk3115b-s17 D1806 2SK31
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3115B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION PART NUMBER The 2SK3115B is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, and 2SK3115B-S17-AY
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2SK3115B
2SK3115B
2SK3115B-S17-AY
O-220
O-220)
2SK3115B-S17-AY
2SK3115
2sk3115b-s17
D1806
2SK31
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2sk3115b-s17
Abstract: 2SK3115B-S17-AY 2SK3115B
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
|
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2SK3115B-S17-AY
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3115B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION PART NUMBER The 2SK3115B is N-Channel MOS FET device that features a 2SK3115B-S17-AY low gate charge and excellent switching characteristics, and
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2SK3115B
2SK3115B
2SK3115B-S17-AY
O-220
2SK3115B-S17-AY
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RTS5158
Abstract: it8511te Q2406B max8776 BC8013 Q8802 T8046 R3430 st d1703 l C8213
Text: A B C D E F9E SCHEMATIC Revision 2.02 1 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 CPU-MEROM 1 CPU-MEROM(2) CPU CAP, Thermal Senor
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ICS9LPR363CGLF
-965GM
ISL6227
PMN45EN
MAX8632
RTS5158
it8511te
Q2406B
max8776
BC8013
Q8802
T8046
R3430
st d1703 l
C8213
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rts5117
Abstract: Asus t4512 BAT19 it85 D1804 T2109 R3439 d2504 isl6260
Text: A B C D E F9F MB SCHEMATIC Revision 2.00 1 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 YONAH CPU 1 YONAH CPU (2) FAN CTRL&Thernal protection
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GEN-ICS954310
RTL8101E
EC-IT8510E
RST5117
12VSUS
12VSUS
PJP6302
PJP6303
rts5117
Asus
t4512
BAT19
it85
D1804
T2109
R3439
d2504
isl6260
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MB39A132
Abstract: C1602 a v1.3 c06-15 RTM875T-363-GR L0703 C0639 T0926 tpa6017 asus T0927
Text: A B C D E F80Q SCHEMATIC Revision 2.00 1 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 CPU-Penryn 1 CPU-Penryn(2) CPU CAP, Thermal Senor
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ICS9LPR363CGLF
-960GL
PQ7909B
150mA
PU7901B
MB39A132
C1602 a v1.3
c06-15
RTM875T-363-GR
L0703
C0639
T0926
tpa6017
asus
T0927
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south bridge SIS 968
Abstract: C4833 U2401B R4727 Sis 968 C2237 C5902 C2238 SIS671DX C8208
Text: 5 4 3 Clock GEN D D FSB 533/667 LCD LVDS RGB DVI 1 Thermal CPU YONAH CRT 2 ATI M64-M PCIE 0-15 TMDS North Bridge Sis 671DX DDR2 SO-DIMM1 DDR2 SO-DIMM2 MuTIOL 1G TPM C 533/667 Mhz LPC Debug CON EC ITE8510E PATA South Bridge Sis 968 SATA C ODD HDD USB CCD PCI
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M64-M
671DX
ITE8510E
10/100M
RTL8100CL
RTS5117
ALC660D
FDW2501
MIC5235
SI4800BDY
south bridge SIS 968
C4833
U2401B
R4727
Sis 968
C2237
C5902
C2238
SIS671DX
C8208
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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