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D1410A Abstract: 2SD1410A Text: D1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington D1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min.) (VCE = 2 V, IC = 2 A) Maximum Ratings (Ta = 25°C) Characteristics	Original	PDF	2SD1410A D1410A 2SD1410A
D1410A Abstract: 2SD1410A Text: D1410A シリコンNPN三重拡散形ダーリントン接続東芝トランジスタ D1410A 通信工業用 ○ 高電圧スイッチング用 • 単位: mm 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 2 A) 絶対最大定格 (Ta = 25°C)	Original	PDF	2SD1410A 2-10R1A D1410A 2SD1410A
D1410A Abstract: 2SD1410A 2-10R1A Text: D1410A シリコンNPN三重拡散形ダーリントン接続東芝トランジスタ D1410A 通信工業用 ○ 高電圧スイッチング用 • 単位: mm 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 2 A) 絶対最大定格 (Ta = 25°C)	Original	PDF	2SD1410A 2-10R1A 20070701-JA D1410A 2SD1410A 2-10R1A
D1410A Abstract: 2SD1410A Text: D1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington D1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min.) (VCE = 2 V, IC = 2 A) Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SD1410A D1410A 2SD1410A
D1410A Abstract: 2SD1410A Text: D1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington D1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 2 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	PDF	2SD1410A D1410A 2SD1410A
D1410A Abstract: No abstract text available Text: D1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington D1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min.) (VCE = 2 V, IC = 2 A) Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SD1410A 2-10R1A D1410A