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Samtec Inc IDSD-10-S-60.00 INSULATION DISPLACEMENT TERMINAL Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IDSD-10-S-60.00	Bulk			1	1 $16.73 10 $16.73 100 $16.73 1000 $16.73 10000 $16.73	Buy Now
Avnet Americas	IDSD-10-S-60.00	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IDSD-10-S-60.00					1 $16.73 10 $15.52 100 $12.17 1000 $7.67 10000 $7.67	Get Quote
Newark	IDSD-10-S-60.00	Bulk			1	1 $21.81 10 $20.28 100 $12.26 1000 $12.26 10000 $12.26	Buy Now
Master Electronics	IDSD-10-S-60.00					1 $20.5 10 $18.29 100 $13.04 1000 $9.97 10000 $9.97	Buy Now

Sager	IDSD-10-S-60.00				1	1 $16.73 10 $15.52 100 $12.17 1000 $10.93 10000 $10.93	Buy Now
Samtec Inc TCMD-10-S-60.00-01 2MM DOUBLE ROW MALE IDC ASSEMBLY Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TCMD-10-S-60.00-01	Bulk			1	1 $14.88 10 $14.88 100 $14.88 1000 $14.88 10000 $14.88	Buy Now
Avnet Americas	TCMD-10-S-60.00-01	Bulk			1	1 $13.98 10 $13.24 100 $11.11 1000 $11.11 10000 $11.11	Buy Now
Mouser Electronics	TCMD-10-S-60.00-01					1 $13.98 10 $13.24 100 $11.11 1000 $7.74 10000 $7.74	Get Quote
Newark	TCMD-10-S-60.00-01	Bulk			1	1 $18.9 10 $17.58 100 $10.63 1000 $10.63 10000 $10.63	Buy Now
Master Electronics	TCMD-10-S-60.00-01					1 $18.24 10 $16.28 100 $11.9 1000 $9.48 10000 $9.48	Buy Now
Samtec Inc HCSD-10-S-60.00-01 IDC SOCKET AND TERMINAL CABLE AS Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HCSD-10-S-60.00-01	Bulk			1	1 $19.37 10 $19.37 100 $19.37 1000 $19.37 10000 $19.37	Buy Now
Avnet Americas	HCSD-10-S-60.00-01	Bulk			1	1 $18.02 10 $16.89 100 $12.59 1000 $12.59 10000 $12.59	Buy Now
Mouser Electronics	HCSD-10-S-60.00-01					1 $18.02 10 $16.89 100 $12.59 1000 $9.49 10000 $9.49	Get Quote
Master Electronics	HCSD-10-S-60.00-01					1 $22.09 10 $19.71 100 $14.04 1000 $10.75 10000 $10.75	Buy Now
Samtec Inc TCSD-10-S-60.00-01 2MM DOUBLE ROW FEMALE IDC ASSEMB Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TCSD-10-S-60.00-01	Bulk			1	1 $16.88 10 $16.88 100 $16.88 1000 $16.88 10000 $16.88	Buy Now
Mouser Electronics	TCSD-10-S-60.00-01					1 $15.87 10 $15.02 100 $12.28 1000 $7.89 10000 $7.89	Get Quote
Newark	TCSD-10-S-60.00-01	Bulk			1	1 $22 10 $20.46 100 $12.37 1000 $12.37 10000 $12.37	Buy Now
Samtec Inc IDSD-10-S-60.00-ST2 SLIM BODY DOUBLE-ROW IDC SOCKET Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IDSD-10-S-60.00-ST2	Bulk			1	1 $18.05 10 $18.05 100 $18.05 1000 $18.05 10000 $18.05	Buy Now
Avnet Americas	IDSD-10-S-60.00-ST2	Bulk			1	1 $18.05 10 $16.74 100 $13.13 1000 $13.13 10000 $13.13	Buy Now
Mouser Electronics	IDSD-10-S-60.00-ST2					1 $18.05 10 $16.74 100 $13.13 1000 $10.21 10000 $10.21	Get Quote
Master Electronics	IDSD-10-S-60.00-ST2					1 $22.12 10 $19.74 100 $14.07 1000 $10.76 10000 $10.76	Buy Now
Sager	IDSD-10-S-60.00-ST2				1	1 $18.05 10 $16.74 100 $13.13 1000 $11.79 10000 $11.79	Buy Now

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D10S60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IDB10S60C Abstract: PG-TO220-3-45 D10S60C JESD22 Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDB10S60C D10S60C IDB10S60C PG-TO220-3-45 D10S60C JESD22
D10S60C Abstract: IDH10S60C JESD22 Text: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDH10S60C PG-TO220-2 D10S60C D10S60C IDH10S60C JESD22
Untitled Abstract: No abstract text available Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDB10S60C PG-TO263-3-2) D10S60C
D10S60C Abstract: IDB10S60C JESD22 D10S60 Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDB10S60C PG-TO220-3-45) D10S60C D10S60C IDB10S60C JESD22 D10S60
D10S60C Abstract: IDT10S60C JESD22 Text: IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDT10S60C PG-TO220-2-2 D10S60C PG-TO220-2-2: D10S60C IDT10S60C JESD22
AN 22022 Abstract: No abstract text available Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery	Original	PDF	SDT10S60 PG-TO220-2-2. Q67040S4643 D10S60 AN 22022
d10s60c Abstract: No abstract text available Text: IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDT10S60C PG-TO220-2-2 IDT10S60C PG-TO220-2-2 D10S60C
Untitled Abstract: No abstract text available Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDB10S60C PG-TO220-3-45 D10S60C
Untitled Abstract: No abstract text available Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDB10S60C PG-TO220-3-45) D10S60C
d10s60c Abstract: W6015 IDT10S60C JESD22 Text: IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDT10S60C PG-TO220-2-2 D10S60C d10s60c W6015 IDT10S60C JESD22
SDT10S60 Abstract: No abstract text available Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery	Original	PDF	SDT10S60 P-TO220-2-2. D10S60 Q67040S4643 SDT10S60
Untitled Abstract: No abstract text available Text: IDT10S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 24 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 10 A I F @ T C < 100 °C 15 A • Revolutionary semiconductor material - Silicon Carbide	Original	PDF	IDT10S60C PG-TO220-2-2 20mA2)
Untitled Abstract: No abstract text available Text: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDH10S60C IDH10S60C PG-TO220-2 D10S60C
D10S60 Abstract: DIODE 200A 600V schottky PG-TO-220-2-2 Schottky diode TO220 SDT10S60 Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery	Original	PDF	SDT10S60 PG-TO220-2-2. D10S60 Q67040S4643 PG-TO-220-2-2 D10S60 DIODE 200A 600V schottky PG-TO-220-2-2 Schottky diode TO220 SDT10S60

D10S60C Abstract: No abstract text available Text: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDH10S60C PG-TO220-2 D10S60C D10S60C
Untitled Abstract: No abstract text available Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDB10S60C D10S60C

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D10S60 Price and Stock

Samtec Inc IDSD-10-S-60.00

Samtec Inc TCMD-10-S-60.00-01

Samtec Inc HCSD-10-S-60.00-01

Samtec Inc TCSD-10-S-60.00-01

Samtec Inc IDSD-10-S-60.00-ST2

D10S60 Datasheets Context Search

IDB10S60C

D10S60C

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D10S60C

D10S60C

AN 22022

d10s60c

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d10s60c

SDT10S60

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D10S60

D10S60C

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