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SMD diode f9 Abstract: D09G60C IDD09SG60C JESD22 SMD F9 Text: IDD09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior	Original	PDF	IDD09SG60C 20mA2) SMD diode f9 D09G60C IDD09SG60C JESD22 SMD F9
IDH09SG60C Abstract: JESD22 D09G60C Text: IDH09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior	Original	PDF	IDH09SG60C 20mA2) IDH09SG60C JESD22 D09G60C
Untitled Abstract: No abstract text available Text: IDD09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 15 nC • Temperature independent switching behavior IF; TC< 130 °C	Original	PDF	IDD09SG60C 20mA2)
SMD diode f9 Abstract: D09G60C Text: IDD09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 15 nC • Temperature independent switching behavior IF; TC< 130 °C	Original	PDF	IDD09SG60C 20mA2) PG-TO252-3 D09G60C SMD diode f9 D09G60C
SMD diode f9 Abstract: smd diode marking UJ D09G60C IDD09SG60C JESD22 Text: IDD09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior	Original	PDF	IDD09SG60C 20mA2) SMD diode f9 smd diode marking UJ D09G60C IDD09SG60C JESD22
Untitled Abstract: No abstract text available Text: IDD09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior	Original	PDF	IDD09SG60C 20mA2)
Untitled Abstract: No abstract text available Text: IDH09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 15 nC • Temperature independent switching behavior IF; TC< 130 °C	Original	PDF	IDH09SG60C 20mA2)
Untitled Abstract: No abstract text available Text: IDH09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 15 nC • Temperature independent switching behavior IF; TC< 130 °C	Original	PDF	IDH09SG60C 20mA2) PG-TO220-2 D09G60C
SMD diode f9 Abstract: No abstract text available Text: IDD09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior	Original	PDF	IDD09SG60C 20mA2) IDD09SG60C PG-TO252-3 D09G60C SMD diode f9
Untitled Abstract: No abstract text available Text: IDH09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior	Original	PDF	IDH09SG60C 20mA2) PG-TO220-2 D09G60C
Untitled Abstract: No abstract text available Text: IDH09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior	Original	PDF	IDH09SG60C 20mA2) PG-TO220-2 D09G60C