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Infineon Technologies AG IDT08S60C 8 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC (Also Known As: D08S60C)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IDT08S60C		787			1 $5.94 10 $5.94 100 $2.574 1000 $2.376 10000 $2.376	Buy Now

D08S60C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IDT08S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark QC 19 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 8 A • Temperature independent switching behavior I F @ T C < 100 °C	Original	PDF	IDT08S60C PG-TO220-2-2 20mA2)
D08S60C Abstract: IDH08S60C JESD22 Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDH08S60C PG-TO220-2 D08S60C D08S60C IDH08S60C JESD22
Untitled Abstract: No abstract text available Text: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior	Original	PDF	IDT08S60C IDT08S60C PG-TO220-2-2 D08S60C
D08S60C Abstract: No abstract text available Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDH08S60C IDH08S60C PG-TO220-2 D08S60C
D08S60C Abstract: IDT08S60C JESD22 D08S60 D08S Text: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior	Original	PDF	IDT08S60C PG-TO220-2-2 D08S60C D08S60C IDT08S60C JESD22 D08S60 D08S
D08S60C Abstract: IDT08S60C JESD22 Text: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior	Original	PDF	IDT08S60C PG-TO220-2-2 D08S60C D08S60C IDT08S60C JESD22
Untitled Abstract: No abstract text available Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDH08S60C PG-TO220-2 D08S60C