Untitled
Abstract: No abstract text available
Text: APTEK T E C H / A P T E K MICROSYS 5SE D • //eicapteKop^ ¿ a p te k aptey^ ÜÔ'ÎSITb 0 0 0 0 M Ô 3 f laptekaptek api* a p t e k t e c h n o l o g i e s , i n c . aptek <*jr V fi ■ A M S 2060 Active Termination Interface Circuit 1 J PRELIMINARY DESCRIPTION
|
OCR Scan
|
PDF
|
671-BO01
|
2n555
Abstract: No abstract text available
Text: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V VCE, V yc.o y VCE, V Min. CURRENT C A IN Hfe Yce @ Ic Max. V A SA TURA TION VOL TA GES y Cf * y SF(|) /c @ y y A A 9j-c aC /W 3 AMP GERMANIUM PNP CA2D2 2N155 2N176 2N235A 2N236A MT-36 TO-3 TO-3
|
OCR Scan
|
PDF
|
2N155
2N176
2N235A
2N236A
MT-36
2N236B
2N242
2N255
2N256
2N268
2n555
|
LS 74151
Abstract: 2N555 MT27 220 hfk 2N176 Germanium Power Devices MT-27 2N2553 2N297A 2N155
Text: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V yc.o CA2D2 2N155 2N176 2N235A 2N236A 2N236B 2N242 2N255 2N256 2N268 2N285A 2N285B 2N297A 2N375 2N392 2N399 2N538 2N538A 2N539 2N539A 2N540 2N540A 2N554 2N555 2N618 2N1359 2N1360 2N1362 2N1363
|
OCR Scan
|
PDF
|
MT-36
2N155
2N176
2N235A
2N236A
2N236B
2N242
2N255
2N256
2N268
LS 74151
2N555
MT27
220 hfk
Germanium Power Devices
MT-27
2N2553
2N297A
|
2n3215
Abstract: TO13 MT28 diode e 2060 2n2284 2N1042 2N1043 2N1044 2N1045 2N2556
Text: DI O D E T R A N S I S T O R CO INC ~flM DE Ja àMfl35E D Q D O i n 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581
|
OCR Scan
|
PDF
|
2N2668
2N2669
2N2670
2N1042
2N1043
MT-27
MT-28
MT-28
2n3215
TO13
MT28
diode e 2060
2n2284
2N1044
2N1045
2N2556
|
2N3214
Abstract: TO37 2N2283 2N2282 TO13 diode e 2060 MT28 2n1755 2N1043 2N1044
Text: DIODE TRANSISTOR CO INC "ai 28483 52 DIODE T R A N S I S T O R CO INC DE~|efli|fl35E O O D D i n 0 I " 84D 00119 D T- J 5- o7 D1QDE TPidf\15J5TQPi CO., INC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201*575-5883
|
OCR Scan
|
PDF
|
afl4fl352
DDD0111
TMI\I515T0R
Tc-25Â
2N2668
2N2669
2N2670
2N1042
2N1043
MT-27
2N3214
TO37
2N2283
2N2282
TO13
diode e 2060
MT28
2n1755
2N1044
|
2N2067
Abstract: 2N3214 2N158 germanium transistors NPN 2N3215 TO13 MT28 2N1759 2N158A 2N1042
Text: DI O D E T R A N S I S T O R CO INC ~flM 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC DE Ja àMfl35E D Q D O i n 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581
|
OCR Scan
|
PDF
|
2N2668
2N2669
2N2670
2N1042
2N1043
MT-27
MT-28
MT-28
2N2067
2N3214
2N158
germanium transistors NPN
2N3215
TO13
MT28
2N1759
2N158A
|
2N158A
Abstract: germanium NPN 2N1761 2n1218 2N2067 germanium transistors NPN TO13 MT28 2N1042 2N1044
Text: GERMANIUM POWER TRANSISTORS h rc I c/ Y Type Number Case Type Y ebo V J'c E O d w l y AíV ce Min-Max ® A /V @ V CE @ /c //fl (V® A/A) (V@A/V) (mA®V) Po® Tc =25°C &JC (watts) r e /W ) CC) / t (KHzi 3 AM P GERM A NIUM PN P (Coni.) 2N2668 2N2669 2N2670
|
OCR Scan
|
PDF
|
2N2668
MT-27
2N2669
2N2670
2N1042
MT-28
2N1043
2N158A
germanium NPN
2N1761
2n1218
2N2067
germanium transistors NPN
TO13
MT28
2N1044
|
2N206
Abstract: 2N2556 2N2282 TO13 germanium transistors NPN MT28 2N10 2N2067 2N1042 2N1043
Text: GERMANIUM POWER TRANSISTORS h rc I c / Y ce Type Number Case Type J'c E O d w l Y ebo V y AíV K « Min-Max ® A /V @/c//fl (V® A/A) @ V CE (V@A/V) (mA@V) P d@ Tc =25°C &JC (watts) r e /W ) r e ) / t (KHzi 3 AM P GERM A NIUM PN P (Coni.) 2N2668 2N2669
|
OCR Scan
|
PDF
|
2N2668
MT-27
2N2669
2N2670
2N1042
MT-28
2N1043
2N206
2N2556
2N2282
TO13
germanium transistors NPN
MT28
2N10
2N2067
|
germanium transistors NPN
Abstract: TO13 MT28 Germanium power 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557
Text: GERMANIUM POWER DEVICES b3E » • 3^47375 D0DDS7ñ Ôb3 « G P D GERMANIUM POWER TRANSISTORS I Type Num ber Case Type 2N2668 2N2669 2N2670 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 2N2558 2N2559 2N2282 2N2283 2N2284 2N3212 2N3213 2N3214 2N3215 2N1183 2N1183A
|
OCR Scan
|
PDF
|
2N2668
MT-27
2N2669
2N2670
2N1042
MT-28
2N1043
germanium transistors NPN
TO13
MT28
Germanium power
2N1044
2N1045
2N2556
2N2557
|
2N3215
Abstract: MT28 TO13 2n3214 Germanium power
Text: GERMANIUM POWER DEVICES b3E ]> • 3TM7375 000057Ö Öb3 ■ G P P GERMANIUM POWER TRANSISTORS Case Type Type Number V e to irui V hFE IC/VCE Min-Max & A/V) Vao v VC£iJal) (V@A/A) Vie @Ic/VcE (V@A/V) IcEV @ VcE (mA @ V) P d@ Tc = 25°C 9ir TJimaxi /r
|
OCR Scan
|
PDF
|
3TM7375
2N2668
2N2669
2N2670
2N1042
2N1043
2N1044
2N1045
2N2556
2N2557
2N3215
MT28
TO13
2n3214
Germanium power
|
Untitled
Abstract: No abstract text available
Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 jLf ¡11 NPN TO-5 iff /y DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 2N1479A 40 1.5 [email protected]/4 2N1480A 55 1.5 2N1481A 40 2N1482A 1*FE@ IC/ ^ ce (min/max @ A/V) VcE(s»t) @ (V @ A/A)
|
OCR Scan
|
PDF
|
O-39/TO-5
2N1479A
2N1480A
2N1481A
2N1482A
2N1714A
2N1715A
2N1716A
2N1717A
2N1890
|
2N3440A
Abstract: No abstract text available
Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 Hr ¡11 NPN TO-5 hr H/ VcEO Ic DEVICE TYPE sus VOLTS (max) AMPS V Vce 2N1479A 40 1.5 [email protected]/4 2N1480A 55 1.5 2N1481A 40 2N1482A hFE@ VcE(j»t) pr D* WATTS (MHz) [email protected]/,02 5
|
OCR Scan
|
PDF
|
O-39/TO-5
2N1479A
2N1480A
2N1481A
2N1482A
2N1714A
2N1715A
2N1716A
2N1717A
2N1890
2N3440A
|
2N3439A
Abstract: 2N1890 2N3418A 2N3419A 1016npn 2N1717A npn 505 142 transistor
Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 V ceo PACKAGE NPN TO-39 /¡ I NPN TO-5 Tjr i$f Ic DEVICE TYPE sus VOLTS (m ax ) 1*FE@ V CE (m in /m ax AMPS @ A/V) 2N1479A 40 1.5 [email protected]/4 2N1480A 55 1.5 2N1481A 40 2N1482A VcE(s»t) @ (V @ A/A)
|
OCR Scan
|
PDF
|
O-39/TO-5
2N1479A
2N1480A
2N1481A
2N1482A
2N1714A
2N1715A
2N1716A
2N1717A
2N1890
2N3439A
2N3418A
2N3419A
1016npn
npn 505
142 transistor
|
transistor c 2060
Abstract: d 2060 transistor 2060 transistor 2n2223 BSCECC 2N2060
Text: SEMICONDUCTOR NETWORKS S TAN D AR D PROD UCTS - SILICON PLANAR D UAL TRANSISTORS A range of dual transistors for differential amplifiers and other applications requiring matched transistors with a high degree of parameter uniformity, encapsulated in multilead TO-5.
|
OCR Scan
|
PDF
|
ZDT41
ZDT42
ZDT45
transistor c 2060
d 2060 transistor
2060 transistor
2n2223
BSCECC
2N2060
|
|
Untitled
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 NPN TO-39 NPN TO-5 DEVICE TYPE 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N4150 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237 2N5238 2N5337 2N5338 2N5339
|
OCR Scan
|
PDF
|
O-39/TO-5
2N1479
2N1480
2N1481
2N1482
2N1714
2N1717
2N3418
2N3419
2N3420
|
2N2060
Abstract: 2N2223 2N2223A ZDT40 ZDT41 ZDT42 ZDT44 ZDT45
Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR DUAL TRANSISTORS A range o f dual transistors fo r differential amplifiers and other applications requiring matched transistors w ith a high degree o f parameter uniform ity, encapsulated in multilead TO-5.
|
OCR Scan
|
PDF
|
2N2060
ZDT40
ZDT41
ZDT42
ZDT44
ZDT45
60T45
2N2223
2N2223A
|
TO61 package
Abstract: 2N1724A 2N5540 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 VcEO Ic ^FE@ IC/ ^CE fr MHz l@2/.2 50 10 30-90@2/15 ,6@2/.2 50 10 5 50-150@2/15 l@2/.2 50 10 50 10 20-60@5/5 .5 @5/. 5 40 15 2N2812 50 10 40-120@5/5 ,5 @ 5/.5 40 15 2N2813 70 10 20-60@5/5 , 5 @ 5/.5
|
OCR Scan
|
PDF
|
2N1724A
2N1725
2N2811
2N2812
2N2813
2N2814
2N3489
2N3490
2N3491
TO61 package
2N5540
|
2N4839
Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i
|
OCR Scan
|
PDF
|
2N3789
2N3713
2N3790
2N3714
2N3791
2N3715
2N3792
050-H
O-107
O-126
2N4839
TO114 package
2N5860
2N1724A
2N3716
|
2N5302 EB
Abstract: 2N1463 2n4271
Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3
|
OCR Scan
|
PDF
|
SaD01
2N37S9
2N3790
2N3792
2N4398
2N4399
2N4902
2N4903
2N4904
2N4905
2N5302 EB
2N1463
2n4271
|
transistor 2N43
Abstract: 2N3491 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490
Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 PACKAGE DEVICE TYPE VcEO sus VOLTS (max) AMPS NPN TO-61 2N1724A 80 5 20-90@15 2N1724A 120 5 lAm M 2N1725 80 2N2811 • Ic ^*FE@ VcE<sat) IC/ ^ C E pr D * WATTS fr (MHz) l@2/,2 50 10 30-90@2/15 ,6@2/.2
|
OCR Scan
|
PDF
|
2N1724A
2N1725
2N2811
2N2812
2N2813
2N2814
2N3489
2N3490
2N3491
transistor 2N43
|
Untitled
Abstract: No abstract text available
Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2
|
OCR Scan
|
PDF
|
2N1482/40349
2N1482)
2N1700
2N1482®
O-39/TO-205MD
92CS--24062
|
2n3054
Abstract: 40349
Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2
|
OCR Scan
|
PDF
|
2N1482/40349
2N1482)
2N1700
2N1482®
O-39/TO-205MD
92CS-2022Î
2n3054
40349
|
STA6047
Abstract: 2N1038 2n1039 LS 74151 2n2665 2N2661 germanium transistors NPN STA6048 STA9860 STA9861
Text: silicon power transistors NPN TO-63 cont’d C(M AX) = 10 to 30A VcEO(SUS) = f T = 0.6 to 30 MHz 60 to 350V Is/b to F F tO N @ VcE ICEV Pd @ VcE(SAT) @ Ic/VcE Vbe t = 1sec Generic T r=100°c @ Ic/Ib d jc @ I c / Ib @ VCE fT (Min-Max @ I c / Ib @ Ic/VcE VcEO|SUS|
|
OCR Scan
|
PDF
|
STAE046
STA6047
STA6048
2N2564
2N2565
2N2566
2N2567
2N2659
2N2660
2N2661
2N1038
2n1039
LS 74151
2n2665
germanium transistors NPN
STA6048
STA9860
STA9861
|
2N3406
Abstract: 2N3055 plastic pic 08m 2N3055-6 2N305A 2N3055 2N3444 2N3680 2N3172 2N3055-7
Text: Ô1331Ô7 4ÔE D DDDDM3S SEMELABI 112 ISfILB SEMELAB L T » r * 2 . ? . ö / BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N3036 2N3053 2N3053L 2N305A 2N3055 2N3055/5 2N3055/6 2N3Q55/7 2N3055E 2N3055H 2N3109 2N3110 2N311A 2N3167 2N3168 2N3169
|
OCR Scan
|
PDF
|
2N3036
10/10m
2N3053
2N3053L
2N305A
2N3055
20rain
2N3055/5
2N3055/6
2N3055/7
2N3406
2N3055 plastic
pic 08m
2N3055-6
2N3444
2N3680
2N3172
2N3055-7
|