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    D 1062 TRANSISTOR Search Results

    D 1062 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D 1062 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING P2F

    Abstract: No abstract text available
    Text: ON Semiconductort PZT2907AT1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


    Original     		PDF OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 MARKING P2F

    2SK1213

    Abstract: transistor 2sk1213 D 1062 transistor adit Field Effect Transistor Silicon N Channel MOS vdss 600
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSH 2SK1213 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS FEATURES: • Low Drain-Source ON Resistance : RDS(0N)= 0.95Q (Typ.)


    OCR Scan     		PDF DD300V 00A/j 2SK1213 transistor 2sk1213 D 1062 transistor adit Field Effect Transistor Silicon N Channel MOS vdss 600

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 569 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kfl JZL LÜ XLs UPON INQUIRY 1 =B Package o BCR 569 Pin Configuration II CO Marking Ordering Code liJ HI II


    OCR Scan     		PDF OT-23

    C744

    Abstract: BC301-6 cp409 SGS-ATES c426 BFY72 sgs c426 Transistor 2N3866 BC119 sgs-ates BFR97
    Text: S G S -A T E S Semiconductors Transistors -N P N N P N Medium Po w er Transistors R EFEREN CE T A B L E 0.8 6* 6* «* 3* o u_ C ode BC119 BC300 BC301 BC302 BFR36 M ax P tot @ T * m b = 25 -C W 30 80 60 45 30 Max lc (A ) 1 7 7 7 0.3 @ lc (m A ) Min fr (MHz)


    OCR Scan     		PDF BC119 34546C BC300 31624X BC301 31625R BC302 BFR36 30946B BFR97 C744 BC301-6 cp409 SGS-ATES c426 BFY72 sgs c426 Transistor 2N3866 sgs-ates

    2N4896

    Abstract: 2N4897 2n4895
    Text: r Z 7 SGS-THOMSON 2N4895 ^ 7 # MtOtHKmKMMQS_ 2N4896/2N4897 HIGH CURRENT, FAST SWITCHING APPLICATIONS DESCRIPTIO N The 2N4895, 2N4896 and 2N4897 are silicon epi­ taxial planar NPN transistors in Jedec TO-3 metal case. They are intended for high current, fast switching


    OCR Scan     		PDF 2N4895 2N4896/2N4897 2N4895, 2N4896 2N4897 2N4895-2N489b-^ 2N4895-2N 4896-2N 2n4895

    marking BFG

    Abstract: sot 223 marking code 4c
    Text: SIEMENS BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1321 OT-223 900MHz marking BFG sot 223 marking code 4c

    D 1062 transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP3N60E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and


    OCR Scan     		PDF PHP3N60E T0220AB D 1062 transistor

    Untitled

    Abstract: No abstract text available
    Text: PZT3906 _ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a m icrominiature SMD package SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service. QUICK REFERENCE D ATA


    OCR Scan     		PDF PZT3906 OT-223) 25rom

    BFR53

    Abstract: transistor 1061 transistor h 1061
    Text: • 1.1,S3 S 31 00251Mb MS3 H A P X Philips Semiconductors Product specification AflER P H I L I P S / D I S C R E T E b7E D NPN 2 GHz wideband transistor DESCRIPTION BFR53 PINNING NPN transistor in a plastic SOT23 envelope. It is intended for application In thick and thin-film


    OCR Scan     		PDF 00251Mb BFR53 bbS3T31 BFR53 transistor 1061 transistor h 1061

    Untitled

    Abstract: No abstract text available
    Text: bbS3^31 002514b MS3 H A P X Philips Semiconductors N AKER PHILIPS/DISCRETE Product specification b7E D NPN 2 GHz wideband transistor DESCRIPTION c BFR53 PINNING NPN transistor in a plastic SOT23 envelope. It is intended for application in thick and thin-film


    OCR Scan     		PDF 002514b BFR53 0D251SD bbS3T31

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective spécification PowerMOS transistor G EN ER AL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and


    OCR Scan     		PDF PHP3N60E T0220AB

    SGS-ATES c426

    Abstract: ME6002 BFR97 SGS-Ates BC125 sgs-ates transistors ME6101 sgs c426 BC142 BC300
    Text: M icro- Electronics Sem iconductors NPN Transistors N P N Medium Power Transistors R EFER EN C E T A B L E C426 30 BC125 BC142 BC300 min. 15 a l c mA (Ok I c fT Cob pF 150 40 25 19578D 66 150 40 200 150 40 120 25 12 — 76 67 0.5 150 120 — 19480B 19491G


    OCR Scan     		PDF 19578D BC125 19480B BC142 19491G BC300 33425D BC301 33426B BC302 SGS-ATES c426 ME6002 BFR97 SGS-Ates sgs-ates transistors ME6101 sgs c426

    transistor 356 j

    Abstract: transistor 356 b
    Text: SIEMENS BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 356 Vbs 800 V h 5.3 A ^DSion Package Ordering Code 2H TO-218 AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b 5.3


    OCR Scan     		PDF O-218 C67078-S3108-A2 O-218AA transistor 356 j transistor 356 b

    Untitled

    Abstract: No abstract text available
    Text: 47E D ÔE35bOS QG2175S 7 «IS IE G SIEMENS SIEMENS AKTIENGESELLSCHAF 7 ^ j 9 - / 3 BUZ 230 SIPMOS Power MOS Transistor Vos la ^D S on = 1000 V = 5.5 A = 2.0 Q • N channel • FREDFET • Enhancement mode • Package: T O -204A A (T O -3 )1) Type Ordering code


    OCR Scan     		PDF E35bOS QG2175S -204A 7078-A 105-A 023Sb05 QQ517bO T-39-13 SIL00733 SIL00740

    150 amp transistors

    Abstract: 2n3055 tos BFR97 2n3055 sgs SGS-ATES fairchild semiconductors bfr36 BFR98 2N3054 2N6233
    Text: Sem iconductors Fairchild Sem iconductors Silicon Power Transistors N PN Power Transistors Metal Can T05 REFERENCE T A B LE See small signal general purpose a m plifier and high voltage sections M AX r a | in g s C H A R A C TE R IS TIC S @25‘ C V CE(sat)


    OCR Scan     		PDF BFX34 35373H 2N3440 35374F 19107X 2N1613 19145X 2N1711 34312F 2N1893 150 amp transistors 2n3055 tos BFR97 2n3055 sgs SGS-ATES fairchild semiconductors bfr36 BFR98 2N3054 2N6233

    2N4896

    Abstract: 2N4897 2N4895-2N4896-2N4897
    Text: • 7^237 002^305 SCS-THOMSON M ùntom i ?«« S G S-TH0MS0N 1 2 N4895 2N4896/2N4897 3QE D HIGH CURRENT, FAST SWITCHING APPLICATIONS DESCRIPTIO N The 2N4895, 2N4896 and 2N4897 are silicon epi­ taxial planar NPN transistors in Jedec TO-3 metal case. They are intended for high current, fast switching


    OCR Scan     		PDF 2N4897 N4895 2N4896/2 2N4895, 2N4896 2N4897 2N4895-2N4896-2N4897 2N4895-2N4896-2N4897

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 356 Vbs 800 V h ^DS on Package Ordering Code 5.3 A 2w TO-218AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit


    OCR Scan     		PDF O-218AA C67078-S3108-A2 flB35bG5 O-218

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power MOS Transistor VDS l0 ^ D S o n BUZ 230 = 1000 V = 5.5 A = 2.0 Q • N channel • FREDFET • Enhancem ent mode • Package: T O -204A A (T O -3 )1) Type Ordering code BUZ 230 C 6 7 0 7 8 -A 1 105-A2 Maximum Ratings Parameter Symbol


    OCR Scan     		PDF -204A 105-A2

    Untitled

    Abstract: No abstract text available
    Text: h 7 > y X $ /Transistors FMY3 FMY3 x f c f $ ^ r '> T ^ 7 V - ^ y a . 7 7; i / $ - ; E - ; i / K P N P / N P N y ' J : l > h 7 / y ^ •f >/<— £ K 7 < /''/In ve rter Driver Epitaxial Planar Dual Mini-Mold PNP/NPN Silicon Transistor y — >f — 5 — T


    OCR Scan     		PDF

    BFR97

    Abstract: sgs-ates BSY87 BSY90 1128G BSY88 BFY72 2N1613 2N1711 BSY51
    Text: ITT Semiconductors NPN Transistors N P N Silico n General Purpose Amplifiers and Sw itches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800m W @ 25'C. O u tlin e D ra w in g N o. 66 ap p lie s. REFEREN CE T A B L E C h a ra c te ristic s @


    OCR Scan     		PDF VCBOUPtOl20V. 750mA. 800mW BSY51 BSY54 BSY55 BSY56 BSY87 BSY88 BSY90 BFR97 sgs-ates BSY87 BSY90 1128G BSY88 BFY72 2N1613 2N1711 BSY51

    2N915

    Abstract: bf 697 bf459 transistor sgs c426 transistor 2n3053 2N2369 2N2369A 2N914 BC119 BSX20
    Text: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N P N Silico n H igh Speed Saturated Sw itch in g Transistors M e tal C a n T O IS R EFEREN CE T A B L E For medium speed - see General P u rp o se Section. C H A R A C T E R I S T IC S @ 25"C


    OCR Scan     		PDF BSX20 35250H BSX26 35251F 2N914 35252D 2N2369 35253B 2N2369A 35254X 2N915 bf 697 bf459 transistor sgs c426 transistor 2n3053 BC119

    Untitled

    Abstract: No abstract text available
    Text: OLE D • bfc.53^31 001420b £ D 'T ~ 3 '3 ~ " N AMER PHILIPS/DISCRETE 86D 01968 BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF 001420b BLY93A r3774

    SD 1062 transistor

    Abstract: TRANSISTOR b100 D 1062 transistor
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology


    OCR Scan     		PDF BUK7840-55 OT223 OT223. SD 1062 transistor TRANSISTOR b100 D 1062 transistor

    MPSH54

    Abstract: MPS-H54 455 khz filter MPSH04 MPS-H55 MPSH55 equivalent MPS-H04 MPS-H05 AM radio MPSH05
    Text: MPS-H54 silicon MPS-H55 PNP SILICON TRANSISTORS PNP SILICON ANNULAR TRANSISTORS . . . MPS-H54 is designed for RF am plifier applications in AM receivers. . . . MPS-H55 is designed for mixer, oscillator, autodyne converter, and IF am plifier applications in AM receivers.


    OCR Scan     		PDF MPS-H54 MPS-H55 MPS-H54 MPS-H55 15/imhos MPS-H04, MPS-H05 MPS-H54, MPSH54 455 khz filter MPSH04 MPSH55 equivalent MPS-H04 MPS-H05 AM radio MPSH05