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    Vishay Intertechnologies CRCW12061002FRT1

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    CRCW12061002F Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CRCW12061002F National Semiconductor N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages Original PDF
    CRCW12061002F Vishay RES SMC 10K OHM 1/4W/1% 1 Original PDF
    CRCW12061002F100 Vishay RES, 10K OHM, .25W, 1% Original PDF
    CRCW12061002FB02 Vishay RES 10K 1% .125W 120 Original PDF
    CRCW12061002FRT Vishay RES,1206,1%,1/8W,10.0K Original PDF
    CRCW12061002FRT1 Vishay RES, 10K OHM 1% 1/8W Original PDF
    CRCW12061002FRT5 Vishay RES, 10K 1% 1/8W SMT, 1206 Original PDF
    CRCW12061002FT Vishay RES SMC 10K OHM 1/4W/1% 1 Original PDF

    CRCW12061002F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF6S21140HR3

    Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors

    MRF6S19060N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19060NR1 MRF6S19060NBR1 Designed for N- CDMA base station applications with frequencies from 1930


    Original     		PDF MRF6S19060N MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060NR1 MRF6S19060N

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SNVA135A – October 2005 – Revised April 2013 AN-1418 LM2736 Evaluation Board 1 Introduction The LM2736 demo board is configured to convert 5V input to 1.5V output at 750 mA load current using the LM2736X 1.6 MHz or the LM2736Y 550 kHz step down DC-DC regulator. The tiny low profile thin


    Original     		PDF SNVA135A AN-1418 LM2736 LM2736X LM2736Y

    VJ0805Y105KXA

    Abstract: No abstract text available
    Text: User's Guide SNVA080A – May 2013 AN-1308 LM2700 Evaluation Board 1 Introduction The LM2700 is a high current step-up DC/DC converter that can be used for TFT-LCD applications. The evaluation board is set up for 8V output from a single Li-Ion battery input. The switching frequency can be


    Original     		PDF SNVA080A AN-1308 LM2700 TSSOP-14 WSON-14 VJ0805Y105KXA

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SNVA100A – February 2005 – Revised April 2013 AN-1350 LM2734 Evaluation Board 1 Introduction The LM2734 demo board is configured to convert 5V input to 1.8V output at 1A load current using the LM2734X 1.6MHz or the LM2734Y 550kHz step down DC-DC regulator. The tiny low profile thin SOT23


    Original     		PDF SNVA100A AN-1350 LM2734 LM2734X LM2734Y 550kHz

    C4532X7R2A105MT

    Abstract: cmsh3-40l-nsa SUMMATION current transformer LM5000 LM5000-3MTC LM5000-3MTCX LM5000SD-3 LM5000SD-6 LM5000SDX-3 3.1v ZENER DIODE
    Text: LM5000 High Voltage Switch Mode Regulator General Description Features The LM5000 is a monolithic integrated circuit specifically designed and optimized for flyback, boost or forward power converter applications. The internal power switch is rated for a maximum of 80V, with a current limit set to 2A. Protecting


    Original     		PDF LM5000 LM5000 C4532X7R2A105MT cmsh3-40l-nsa SUMMATION current transformer LM5000-3MTC LM5000-3MTCX LM5000SD-3 LM5000SD-6 LM5000SDX-3 3.1v ZENER DIODE

    7.3*4.3*2.8mm

    Abstract: VJ1206A102 VJ1206A102k LM2727 LM2737 MTC14 Si4826DY SLF12575T-1R2N8R2 TDK MLCC 1206 100uF LM27x7
    Text: LM2727/LM2737 N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages General Description Features The LM2727 and LM2737 are high-speed, synchronous, switching regulator controllers. They are intended to control currents of 0.7A to 20A with up to 95% conversion efficiencies. The LM2727 employs output over-voltage and undervoltage latch-off. For applications where latch-off is not desired, the LM2737 can be used. Power up and down


    Original     		PDF LM2727/LM2737 LM2727 LM2737 7.3*4.3*2.8mm VJ1206A102 VJ1206A102k MTC14 Si4826DY SLF12575T-1R2N8R2 TDK MLCC 1206 100uF LM27x7

    PTC THERMISTOR TDK

    Abstract: inductor 220 mh 4148 vishay smd WE-MIDCOM NCL30001 LM324DG SMD resistor royal ohm PTC THERMISTOR PHILIPS PTC 250 Ohm - 25 - 25 V C3216COG1H TDK PTC 1206
    Text: AND8470/D A 25 to 55 V, 0.7 to 1.5 A, Single Stage Power Factor Corrected Constant Current Offline LED Driver with Flexible Dimming Options Prepared by: Frank Cathell APPLICATION NOTE ON Semiconductor Introduction energy savings without compromising safety and


    Original     		PDF AND8470/D PTC THERMISTOR TDK inductor 220 mh 4148 vishay smd WE-MIDCOM NCL30001 LM324DG SMD resistor royal ohm PTC THERMISTOR PHILIPS PTC 250 Ohm - 25 - 25 V C3216COG1H TDK PTC 1206

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 2, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to


    Original     		PDF MRF7S15100H MRF7S15100HR3 MRF7S15100HSR3 MRF7S15100HR3

    mrf5s19060nr1

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to


    Original     		PDF MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3

    RS232 MAX232 smd pin diagram

    Abstract: MAX3232CSE
    Text: Obsolete TOIM4232 Vishay Semiconductors SIR Endec for IrDA Applications Integrated Interface Circuit FEATURES • Pulse shaping function shortening stretching used in SIR IrDA applications and • Directly interfaces the SIR transceiver TFD.and TFB.- series to an RS232 port


    Original     		PDF OIM4232 RS232 2002/95/EC 2002/96/EC OIM4232 11-Mar-11 RS232 MAX232 smd pin diagram MAX3232CSE

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 MRF7S19100NR1

    J365

    Abstract: TLC 3391 ATC100B150JT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 1, 2/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to


    Original     		PDF MRF7S15100H MRF7S15100HR3 MRF7S15100HSR3 J365 TLC 3391 ATC100B150JT500X

    MRF6S19060N

    Abstract: No abstract text available
    Text: Document Number: MRF6S19060N Rev. 5, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF6S19060N IS--95 MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060N

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage


    Original     		PDF MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H

    IDC7X2

    Abstract: PLM250S40T1 73D34 Y4A16 12062R104K9BB2 746X101 ADSP-21160MKB-80X CR21-4701F-T FER002 TRANSISTOR c104
    Text: ADSP-21160 EZ-KIT Lite Evaluation System Manual Revision 4.0, January 2005 Part Number 82-000513-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2005 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written


    Original     		PDF ADSP-21160 P9-10) IDC7X2 PLM250S40T1 73D34 Y4A16 12062R104K9BB2 746X101 ADSP-21160MKB-80X CR21-4701F-T FER002 TRANSISTOR c104

    transistor p710

    Abstract: 73D34 AD1871 ADSP-TS101S psdsoft express 8.6 ADSP-TS101 AD1854 rd msh murata msh CT1112
    Text: ADSP-TS101S EZ-KIT Lite Evaluation System Manual Revision 2.1, April 2006 Part Number 82-000635-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2006 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written consent


    Original     		PDF ADSP-TS101S transistor p710 73D34 AD1871 psdsoft express 8.6 ADSP-TS101 AD1854 rd msh murata msh CT1112

    C4532X5R1H475MT

    Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N
    Text: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 C4532X5R1H475MT ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427

    MRF6S21060N

    Abstract: CRCW12061001FKEA j8084 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A113 JESD22-A114 MRF6S21060NBR1 MRF6S21060NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 5, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S21060N MRF6S21060NR1 MRF6S21060NBR1 MRF6S21060N CRCW12061001FKEA j8084 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A113 JESD22-A114 MRF6S21060NBR1

    Untitled

    Abstract: No abstract text available
    Text: LM5030 www.ti.com SNVS215C – APRIL 2003 – REVISED MARCH 2013 LM5030 100V Push-Pull Current Mode PWM Controller Check for Samples: LM5030 FEATURES APPLICATIONS • • • • • • • • • • • • • • 1 2 Internal High Voltage Start-up Regulator


    Original     		PDF LM5030 SNVS215C LM5030

    Untitled

    Abstract: No abstract text available
    Text: LM2742 www.ti.com SNVS266C – MARCH 2004 – REVISED MARCH 2013 LM2742 N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages Check for Samples: LM2742 FEATURES DESCRIPTION • • • The LM2742 is a high-speed, synchronous, switching


    Original     		PDF LM2742 SNVS266C LM2742 TSSOP-14

    CRCW12061002F

    Abstract: smd 301 main transformer secondary 6V 200mA specification V9 smd diode LM5030 datasheet AN-1305 C0805C472K5RAC LM3411 LM5030 LM5030EVAL
    Text: National Semiconductor Application Note 1305 Dennis Morgan January 2004 Introduction The output inductor L2 not only smoothes the output voltage waveform, but also generates an auxiliary voltage (by means of its secondary winding) to power the Vcc pin on the


    Original     		PDF LM5030. LM5030EVAL LM5030 AN-1305 CRCW12061002F smd 301 main transformer secondary 6V 200mA specification V9 smd diode LM5030 datasheet AN-1305 C0805C472K5RAC LM3411