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    COMSET Search Results

    COMSET Datasheets (151)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    180T2 Comset Semiconductors 60V NPN silicon transistot, diffused mesa Original PDF
    181T2 Comset Semiconductors 90V NPN silicon transistot, diffused mesa Original PDF
    182T2 Comset Semiconductors 140V NPN silicon transistot, diffused mesa Original PDF
    183T2 Comset Semiconductors 180V NPN silicon transistot, diffused mesa Original PDF
    184T2 Comset Semiconductors 200V NPN silicon transistot, diffused mesa Original PDF
    185T2 Comset Semiconductors 250V NPN silicon transistot, diffused mesa Original PDF
    185T2A Comset Semiconductors NPN SILICON TRANSISTORS, DIFFUSED MESA Original PDF
    185T2B Comset Semiconductors NPN SILICON TRANSISTORS, DIFFUSED MESA Original PDF
    185T2C Comset Semiconductors NPN SILICON TRANSISTORS, DIFFUSED MESA Original PDF
    2N1595 Comset Semiconductors Silicon Thyristor Original PDF
    2N1596 Comset Semiconductors Silicon Thyristor Original PDF
    2N1597 Comset Semiconductors Silicon Thyristor Original PDF
    2N1598 Comset Semiconductors Silicon Thyristors Original PDF
    2N1599 Comset Semiconductors Silicon Thyristor Original PDF
    2N1671 Comset Semiconductors PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS Original PDF
    2N1671A Comset Semiconductors PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS Original PDF
    2N1671B Comset Semiconductors PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS Original PDF
    2N2322 Comset Semiconductors Silicon Thyristor Original PDF
    2N2323 Comset Semiconductors Silicon Thyristors Original PDF
    2N2324 Comset Semiconductors Silicon Thyristors Original PDF
    ...

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    2N1595

    Abstract: 2N1599 2N1596
    Text: COMSET SEMICONDUCTORS 2N1595 thru 2N1599 SILICON THYRISTOR Industrial-type, low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit applications. Current handling capability of 1.6 amperes at junction temperetures to 125°C


    Original     		PDF 2N1595 2N1599 2N1595 2N1596 2N1597 2N1598 2N1599 2N1596

    2N3055

    Abstract: 2n3055 pin
    Text: COMSET SEMICONDUCTORS 2N3055 POWER LINEAR AND SWITCHING APPLICATIONS The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.


    Original     		PDF 2N3055 2n3055 pin

    MJ1000

    Abstract: MJ900 MJ901 mj1001 ic 901 adc 515 Comset
    Text: COMSET SEMICONDUCTORS MJ900/901/1000/1001 COMPLEMENTARY POWER DARLINGTONS TO-3 The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and


    Original     		PDF MJ900/901/1000/1001 MJ900, MJ901, MJ1000 MJ1001 MJ900 MJ900 MJ901 ic 901 adc 515 Comset

    VOLTAGE-60

    Abstract: No abstract text available
    Text: COMSET SEMICONDUCTORS 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP)


    Original     		PDF 2N2322 2N2326 2N2322 2N2323 VOLTAGE-60

    2N3442

    Abstract: 2N4347 transistor 2n3442 2n3442 datasheet ic20
    Text: 2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Low Collector-Emitter Saturation Voltage –


    Original     		PDF 2N3442 2N4347 2N3442 2N4347 transistor 2n3442 2n3442 datasheet ic20

    32H6910

    Abstract: comclock TR12 Voltage Regulator 3.3V
    Text: SSI 32H6910 12 V VCM/Spindle Driver Prototype EN TS April 1999 DESCRIPTION FEATURES The SSI 32H6910 is a VCM and spindle motor driver intended for cost-conscious desktop applications up to 4 disks. It is housed in a 64-Pin TQFP deep downset package that, when installed using recommended


    Original     		PDF 32H6910 32H6910 64-Pin comclock TR12 Voltage Regulator 3.3V

    BU2508AF

    Abstract: bu2508af equivalent TRANSISTOR BU2508AF
    Text: NPN BU2508AF NPN SILICON POWER TRANSISTORS The BU2508AF is silicon power transistor mounted in Jedec TO-3PF plastic package. They are designed for use in horizontal deflection circuits of color TV receivers. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol


    Original     		PDF BU2508AF BU2508AF O-218) bu2508af equivalent TRANSISTOR BU2508AF

    BD241

    Abstract: BD241C BD242 BD242C BD242A BD241A BD241B BD242/A/B/C
    Text: NPN BD241, A, B, C, PNP BD242, A, B, C, MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD241, A, B, C are the NPN transistors, the complementary PNP are BD242, A, B, C. They are the silicon epitaxial-base Power Transistors for use in medium power linear and


    Original     		PDF BD241, BD242, O-220 BD241/BD242 BD241A/BD242A BD241B/BD242B BD241C/BD242C BD241 BD241C BD242 BD242C BD242A BD241A BD241B BD242/A/B/C

    CC1H2,5

    Abstract: SAF-C509-LM CMH1.5 icc17 80C517A CC1H4 SAB-C509-LM 80C517 CT1F CT1R
    Text: Microcomputer Components 8-Bit CMOS Microcontroller C509-L Data Sheet 09.96 C509-L 8-Bit CMOS Microcontroller C509-L Advance Information • • • • • • • • • • • • • Full upward compatibility with SAB 80C517/80C517A and 8051/C501 microcontrollers


    Original     		PDF C509-L 80C517/80C517A 8051/C501 16-MHz 16-bit CC1H2,5 SAF-C509-LM CMH1.5 icc17 80C517A CC1H4 SAB-C509-LM 80C517 CT1F CT1R

    SAA1029

    Abstract: of and gate power supply vcc high voltage 2 input and 2 input nand gate 24v 2 input and gate 24v 6 pin DIL And Gate SAA1029IC SAA1029 equivalent IC AND GATE pin configuration
    Text: SAA1029 UNIVERSAL INDUSTRIAL LOGIC AND INTERFACE CIRCUIT GENERAL DESCRIPTION The SAA1029 is a universal bipolar logic and interface IC with high noise immunity and operational stability for industrial control applications. The most fundamental industrial control functions can be accomplished with only one SAA1029IC. Figure 1 shows the logic


    Original     		PDF SAA1029 SAA1029 SAA1029IC. VCC24V of and gate power supply vcc high voltage 2 input and 2 input nand gate 24v 2 input and gate 24v 6 pin DIL And Gate SAA1029IC SAA1029 equivalent IC AND GATE pin configuration

    BD142

    Abstract: Comset
    Text: BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts.


    Original     		PDF BD142 BD142 Comset

    CT1F

    Abstract: smd transistor c009 8051-UART smd diode s6 43a smd transistor c006 PLM51 SAB-C500 CC1H4 SAB-C509 tx c509
    Text: C509-L ht User's Manual 11.97 tp :/ Se /ww m w ic .s on ie du me ct ns or .d / e/ 8-Bit CMOS Microcontroller C509-L Data Sheet Revision History : 11.97 Previous Releases : 06.96 Original Version Page (new version) Page (prev. Subjects (changes since last revision)


    Original     		PDF C509-L C509-L to11-9 CT1F smd transistor c009 8051-UART smd diode s6 43a smd transistor c006 PLM51 SAB-C500 CC1H4 SAB-C509 tx c509

    BDX66C

    Abstract: BDX66B BDX66A BDX66 BDX66 BDX66B C22B BDX66A
    Text: BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage


    Original     		PDF BDX66 BDX66A BDX66B BDX66C BDX66C BDX66B BDX66A BDX66 BDX66 BDX66B C22B BDX66A

    MJ3001

    Abstract: MJ3000 MJ2501 transistor mj3001 MJ2500 MJ3001 equivalent MJ3000/MJ3001
    Text: MJ2500 - MJ2501 PNP MJ3000 - MJ3001 NPN SILICON EPITAXIAL-BASE DARLINGTON The MJ2500, and MJ2501 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications.


    Original     		PDF MJ2500 MJ2501 MJ3000 MJ3001 MJ2500, MJ2500 MJ3000 transistor mj3001 MJ3001 equivalent MJ3000/MJ3001

    2N6254

    Abstract: 2N6253 2n6371 e978
    Text: 2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions.


    Original     		PDF 2N6253 2N6254 2N6371 2N6253, 2N6254, 2N6371 2N6253 2N6254 e978

    2N3792

    Abstract: 2N3715 PNP 2N3791 2N3716 2N3713 2N3714 2N3789 2N3790 2N3791
    Text: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP


    Original     		PDF 2N3713/2N3714/2N3715/2N3716 2N3789/2N3790/2N3791/2N3792 2N3713, 2N3714, 2N3715 2N3716 2N3789, 2N3790, 2N3791 2N3792 PNP 2N3791 2N3713 2N3714 2N3789 2N3790

    BD182

    Abstract: Fh21e BD181 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 BD183
    Text: BD181 – BD182 – BD183 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS BD181, BD182 and BD183 are silicon NPN transistors intended for a wide variety of high power applications. Typical applications include power switching circuits, audio amplifiers, solenoid drivers, and series and shunt regulators.


    Original     		PDF BD181 BD182 BD183 BD181, BD182 BD183 Fh21e BD181 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059

    80C51

    Abstract: 80C517 80C517A 83C517A-5 83C517A-5N pocket Scale block diagram
    Text: Microcomputer Components SAB 80C517A/83C517A-5 8-Bit CMOS Single-Chip Microcontroller Addendum to User’s Manual SAB 80C517/80C537 Edition 05.94 This edition was realized using the software system FrameMaker. Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73,


    Original     		PDF 80C517A/83C517A-5 80C517/80C537 P-LCC-84 P-MQFP-100-2 80C51 80C517 80C517A 83C517A-5 83C517A-5N pocket Scale block diagram

    "Digital Comparator"

    Abstract: ARM str7 half bridge pwm controller L6460 DO5040H STPS15 GPIO14 16599
    Text: AN3097 Application note EVAL6460 demonstration board based on the L6460 SPI configurable stepper and DC multi motor driver Introduction The L6460 is optimized to control and drive multi-motor systems, providing a unique level of integration in terms of control, power, and auxiliary features. Thanks to its high


    Original     		PDF AN3097 EVAL6460 L6460 "Digital Comparator" ARM str7 half bridge pwm controller DO5040H STPS15 GPIO14 16599

    2N3716

    Abstract: 2N3714 2N3715 2N3713 2n3792 PNP 2N3791 2N3789 2N3790 2N3791 NPN transistor 2n3713
    Text: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP


    Original     		PDF 2N3713/2N3714/2N3715/2N3716 2N3789/2N3790/2N3791/2N3792 2N3713, 2N3714, 2N3715 2N3716 2N3789, 2N3790, 2N3791 2N3792 2N3714 2N3713 PNP 2N3791 2N3789 2N3790 NPN transistor 2n3713

    tip147

    Abstract: TIP146 TIP145 tip147 transistor tip142 tip147 TIP140 TIP141 TIP142
    Text: TIP145, TIP146, TIP147 NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS They are silicon epitaxial-base PNP transistors in monolithic Darlington configuration and are mounted in SOT93 plastic packtage. They are intended for use in power linear and switching application.


    Original     		PDF TIP145, TIP146, TIP147 TIP140, TIP141, TIP142. TIP145 TIP146 tip147 TIP146 TIP145 tip147 transistor tip142 tip147 TIP140 TIP141 TIP142

    2N5322

    Abstract: 2N5323
    Text: PNP 2N5322 – 2N5323 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N5322 and 2N5323 are PNP transistors mounted in TO-39 metal case . They are especially intended for high-voltage medium power applications in industrial and commercial equipements. Compliance to RoHS


    Original     		PDF 2N5322 2N5323 2N5322 2N5323

    BDX20

    Abstract: No abstract text available
    Text: BDX20 PNP SILICON TRANSISTORS EPITAXIAL BASE LF Large Signal Power Amplification High Current Fast Switching Thermal Fatigue Inspection ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector to Base Voltage -60 V VCEO #Collector-Emitter Voltage


    Original     		PDF BDX20 BDX20

    BC160

    Abstract: BC161 transistor bc160 BC161-10 BC140 BC141
    Text: PNP BC160/10 – BC160/16 PNP BC161/10 – BC161/16 GENERAL PURPOSE TRANSISTORS They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package. They are particulary designed for audio amplifiers and switching applications up to 1A. NPN complements are the BC140 – BC141.


    Original     		PDF BC160/10 BC160/16 BC161/10 BC161/16 BC140 BC141. BC160 BC161 BC160 BC161 transistor bc160 BC161-10 BC140 BC141