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    CMPA00 Search Results

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    CMPA00 Price and Stock

    MACOM CMPA0060025F

    IC RF AMP 20MHZ-6GHZ 780019
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMPA0060025F Tray 95 1
    • 1 $1089.8
    • 10 $933.114
    • 100 $933.114
    • 1000 $933.114
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    Mouser Electronics CMPA0060025F 10
    • 1 $968.02
    • 10 $968.02
    • 100 $968.02
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    Richardson RFPD CMPA0060025F 10
    • 1 -
    • 10 $797.63
    • 100 $797.63
    • 1000 $797.63
    • 10000 $797.63
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    MACOM CMPA0060025F1

    IC RF AMP GPS 20MHZ-6GHZ 440219
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMPA0060025F1 Tray 76 1
    • 1 $1093.61
    • 10 $933.319
    • 100 $933.319
    • 1000 $933.319
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    Mouser Electronics CMPA0060025F1
    • 1 $1062.59
    • 10 $1062.59
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    Richardson RFPD CMPA0060025F1 1
    • 1 $881.34
    • 10 $881.34
    • 100 $881.34
    • 1000 $881.34
    • 10000 $881.34
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    MACOM CMPA0060002F1

    IC RF AMP GPS 0HZ-6GHZ 440219
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMPA0060002F1 Tray 70 1
    • 1 $264.41
    • 10 $219.208
    • 100 $264.41
    • 1000 $264.41
    • 10000 $264.41
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    Mouser Electronics CMPA0060002F1 185
    • 1 $213.6
    • 10 $202.52
    • 100 $200.15
    • 1000 $200.15
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    Verical CMPA0060002F1 14 1
    • 1 $235
    • 10 $235
    • 100 $235
    • 1000 $235
    • 10000 $235
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    Richardson RFPD CMPA0060002F1 14 1
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    MACOM CMPA0060002F

    IC RF AMP 20MHZ-6GHZ 780019
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMPA0060002F Tray 57 1
    • 1 $284.95
    • 10 $236.646
    • 100 $236.646
    • 1000 $236.646
    • 10000 $236.646
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    Mouser Electronics CMPA0060002F 93
    • 1 $263.1
    • 10 $236.11
    • 100 $233.23
    • 1000 $233.23
    • 10000 $233.23
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    Verical CMPA0060002F 84 1
    • 1 $254.7
    • 10 $254.7
    • 100 $254.7
    • 1000 $254.7
    • 10000 $254.7
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    Richardson RFPD CMPA0060002F 84 1
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    MACOM CMPA0060025D

    25W, GAN MMIC POWER AMPLIFIER, 5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMPA0060025D Tray 10
    • 1 -
    • 10 $777.457
    • 100 $777.457
    • 1000 $777.457
    • 10000 $777.457
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    Mouser Electronics CMPA0060025D
    • 1 -
    • 10 $785.23
    • 100 $785.23
    • 1000 $785.23
    • 10000 $785.23
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    CMPA00 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CMPA0060002F Cree RF Amplifiers, RF/IF and RFID, TRANS RF GAN HEMT MMIC 780019PKG Original PDF
    CMPA0060002F1 Wolfspeed 2W GAN MMIC PA 28V 0.02-6.0GHZ Original PDF
    CMPA0060002F1-AMP Wolfspeed 0.02-6.0GHZ, AMP W/ CMPA0060002F Original PDF
    CMPA0060002F-AMP Wolfspeed CMPA0060002F DEV BOARD WITH HEMT Original PDF
    CMPA0060002F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRC CMPA0060002 Original PDF
    CMPA0060025F Cree RF Amplifiers, RF/IF and RFID, IC AMP MMIC HEMT 25W 780019PKG Original PDF
    CMPA0060025F1 Wolfspeed 25W GAN MMIC PA 50V 0.02-6.0GHZ Original PDF
    CMPA0060025F1-AMP Wolfspeed 0.02-6.0GHZ, AMP W/ CMPA0060025F Original PDF
    CMPA0060025F-AMP Wolfspeed CMPA0060025F DEV BOARD WITH HEMT Original PDF
    CMPA0060025F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CKT CMPA0060025F Original PDF

    CMPA00 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMPA0060002F

    Abstract: CMPA0060002F-TB CMPA2560002F
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


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    PDF CMPA0060002F CMPA0060002F CMPA0060002F-TB CMPA2560002F

    CMPA0060025F

    Abstract: CMPA0060025F-TB CMPA2560002F JESD22
    Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F CMPA0060025F-TB CMPA2560002F JESD22

    CMPA0060002F

    Abstract: cmpa0060002f applications note GaN amplifier CMPA0060002F Tecdia Cree Microwave CMPA0060002F-TB CMPA2560002F Aeroflex GaN power amplifier
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    PDF CMPA0060002F CMPA0060002F cmpa0060002f applications note GaN amplifier CMPA0060002F Tecdia Cree Microwave CMPA0060002F-TB CMPA2560002F Aeroflex GaN power amplifier

    CMPA0060025

    Abstract: bonding wire cree A114D S-21105 CMPA0060025D
    Text: CMPA0060025D 25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA0060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    PDF CMPA0060025D CMPA0060025D CMPA00 CMPA0060025 bonding wire cree A114D S-21105

    TBT-06M20

    Abstract: CMPA0060002F SMF3-12 aeroflex SMF3-12
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    PDF CMPA0060002F CMPA0060002F CMPA00 60002F TBT-06M20 SMF3-12 aeroflex SMF3-12

    Untitled

    Abstract: No abstract text available
    Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F

    Untitled

    Abstract: No abstract text available
    Text: CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon


    Original
    PDF CMPA0060002D CMPA0060002D CMPA00

    Untitled

    Abstract: No abstract text available
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    PDF CMPA0060002F CMPA0060002F

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon


    Original
    PDF CMPA0060002D CMPA0060002D CMPA00

    TBTH06M20

    Abstract: CMPA0060025F
    Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F TBTH06M20

    CMPA0060025F

    Abstract: RF-35-0100-CH CMPA0060025F-TB
    Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F RF-35-0100-CH CMPA0060025F-TB

    CMPA0060025D

    Abstract: No abstract text available
    Text: CMPA0060025D 25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA0060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    PDF CMPA0060025D CMPA0060025D CMPA00

    TBT-03M1

    Abstract: CMPA0060005F Tecdia Cree Microwave Gan on silicon transistor CMPA0060005F-TB CMPA2560002F
    Text: PRELIMINARY CMPA0060005F 5 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060005F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    PDF CMPA0060005F CMPA0060005F TBT-03M1 Tecdia Cree Microwave Gan on silicon transistor CMPA0060005F-TB CMPA2560002F

    cree

    Abstract: CMPA0060025F Cree Microwave CMPA0060025F-TB CMPA2560002F TBT-H06M20
    Text: PRELIMINARY CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F cree Cree Microwave CMPA0060025F-TB CMPA2560002F TBT-H06M20

    CMPA0060002D

    Abstract: bonding wire cree
    Text: CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon


    Original
    PDF CMPA0060002D CMPA0060002D CMPA00 bonding wire cree

    CMPA0060002F

    Abstract: CMPA0060002F-TB CMPA2560002F JESD22
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    PDF CMPA0060002F CMPA0060002F CMPA0060002F-TB CMPA2560002F JESD22

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS