MR18R162GMN0-CK8
Abstract: No abstract text available
Text: Preliminary MR18R1624 6/8/C/G MN0 TM 4/6/8/12/16d RIMM Module with 288Mb RDRAMs Revision History Version 0.9 (January 2000) - Preliminary - First copy. - Be derived from the 1.02ver 128/144Mbit RDRAM Datasheet Page 0 Rev.0.9 Jan. 2000 Preliminary MR18R1624(6/8/C/G)MN0
|
Original
|
PDF
|
MR18R1624
02ver
128/144Mbit
4/6/8/12/16d
288Mb
MR18R162GMN0-CK8
|
ck7 marking code
Abstract: marking code B49 a35 marking code
Text: MR16R0824 6/8/C/G AN1 MR18R0824(6/8/C/G)AN1 4/6/8/12/16d RIMMTM Module with 128Mb RDRAMs 4/6/8/12/16d RIMMTM Module with 144Mb RDRAMs Revision History Version 1.0 (August 1999) - Preliminary - First copy. - Based on the Rambus RIMM Datasheet Rev.1.0. Version 1.01 (October 1999)
|
Original
|
PDF
|
MR16R0824
MR18R0824
4/6/8/12/16d
128Mb
144Mb
127mm.
ck7 marking code
marking code B49
a35 marking code
|
MR18R0828AN1-CK8
Abstract: ck7 marking code MR18R0824 marking code b35 gan1 marking B44
Text: MR16R0824 6/8/C/G AN1 MR18R0824(6/8/C/G)AN1 Change History Version 1.0 (August 1999) - Preliminary * First copy. * Based on the Rambus RIMM Datasheet Rev.1.0. Version 1.01 (October 1999) Page No. Change Description 1 - Delete the part numbers of low power.
|
Original
|
PDF
|
MR16R0824
MR18R0824
127mm.
MR18R0828AN1-CK8
ck7 marking code
marking code b35
gan1
marking B44
|
MR18R0828BN1-CK8
Abstract: MR18R0824 A84 marking code
Text: MR16R0824 6/8/C/G BN1 MR18R0824(6/8/C/G)BN1 Change History Version 1.1 (October 2000) - First copy. - Based on the 1.1 ver. 128/144Mbit RDRAMs(A-die) base RIMM Datasheet. Version 1.1a (October 2000) * Update based on the latest Rambus RIMM Datasheet Page No.
|
Original
|
PDF
|
MR16R0824
MR18R0824
128/144Mbit
-711MHz/-600MHz)
-600MHz)
8Mx16)
128Mb
16K/32ms
MR18R0828BN1-CK8
A84 marking code
|
SAMSUNG MR18R162GMN0
Abstract: A76 MARKING CODE MR18R162GMN0-CK8
Text: MR16R1624 6/8/C/G MN0 MR18R1624(6/8/C/G)MN0 Change History Version 0.9 (January 2000) - Preliminary * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet Version 1.0 (October 2000) - Preliminary * Based on the 1.0ver Rambus 256/288Mb RDRAMs base RIMM datasheet
|
Original
|
PDF
|
MR16R1624
MR18R1624
02ver
128/144Mbit
256/288Mb
100ps
250ps
200ps
-711MHz/-600MHz)
SAMSUNG MR18R162GMN0
A76 MARKING CODE
MR18R162GMN0-CK8
|
SMBJ130CA
Abstract: SMBJ16CA SMBJ160CA SMBJ8.5CA
Text: Surface Mount Transient Voltage Suppressors 600 W "Gull Wing" SMBG16CA SMBG17CA SMBG18CA SMBG20CA SMBG22CA SMBG24CA SMBG26CA SMBG28CA SMBG30CA SMBG33CA SMBG36CA SMBG40CA SMBG43CA SMBG45CA SMBG48CA SMBG51CA SMBG54CA SMBG58CA SMBG60CA SMBG64CA SMBG70CA SMBG75CA
|
Original
|
PDF
|
SMBG16CA
SMBG17CA
SMBG18CA
SMBG20CA
SMBG22CA
SMBG24CA
SMBG26CA
SMBG28CA
SMBG30CA
SMBG33CA
SMBJ130CA
SMBJ16CA
SMBJ160CA
SMBJ8.5CA
|
marking a86
Abstract: transistor MN1 DATA SHEET transistor MN1
Text: MR16R1624 6/8 MN1 MR18R1624(6/8)MN1 Change History Version 1.1 (March 2000) * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet -Only 4/6/8d RIMM are using 6layer PCB. Page 0 Version 1.1 Mar. 2001 MR16R1624(6/8)MN1 MR18R1624(6/8)MN1
|
Original
|
PDF
|
MR16R1624
MR18R1624
02ver
128/144Mbit
16Mx16)
256Mb
16K/32ms
16Mx18)
marking a86
transistor MN1 DATA SHEET
transistor MN1
|
marking code KE7
Abstract: SM6T39A SM6T22A sm6t33a lt7 209 SM6T10A SM6T24A
Text: SM6T Series Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AA SMBJ Breakdown Voltage 6.8 to 220V Peak Pulse Power 600W Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) t c u rod P New Mounting Pad Layout 0.106 MAX (2.69 MAX)
|
Original
|
PDF
|
DO-214AA
MIL-STD-750,
50mVp-p
marking code KE7
SM6T39A
SM6T22A
sm6t33a
lt7 209
SM6T10A
SM6T24A
|
SM6T10A
Abstract: SM6T12A SM6T15A SM6T18A
Text: SM6T Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors Breakdown Voltage 6.8 to 220V Peak Pulse Power 600W DO-214AA SMBJ Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) Mounting Pad Layout
|
Original
|
PDF
|
DO-214AA
09-Oct-02
SM6T10A
SM6T12A
SM6T15A
SM6T18A
|
SM6T39A
Abstract: SM6T10A SM6T12A SM6T15A SM6T18A marking CM7 KE7 2 7 smb 440 vishay ck7
Text: SM6T Series Vishay Semiconductors New Product formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors Breakdown Voltage 6.8 to 220V Peak Pulse Power 600W DO-214AA SMBJ Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95)
|
Original
|
PDF
|
DO-214AA
03-May-02
SM6T39A
SM6T10A
SM6T12A
SM6T15A
SM6T18A
marking CM7
KE7 2 7
smb 440
vishay ck7
|
lt7 209
Abstract: SM6T15A SM6T18A SM6T30A SM6T7V5A SM6T10A SM6T12A SM6T22A marking code ng7 KX-7
Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT SM6T SERIES TRANSZORB SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Breakdown Voltage - 6.8 to 220 Volts Peak Pulse Power - 600 Watts FEATURES DO-214AA 0.086 2.20 0.155 (3.94) 0.130 (3.30) 0.077 (1.95) 0.180 (4.57) 0.160 (4.06)
|
Original
|
PDF
|
DO-214AA
50mVp-p
lt7 209
SM6T15A
SM6T18A
SM6T30A
SM6T7V5A
SM6T10A
SM6T12A
SM6T22A
marking code ng7
KX-7
|
vishay mk7
Abstract: 3 Volt transzorb JESD22-B102D J-STD-002B SM6T10A SM6T12A SM6T12CA
Text: SM6T Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform
|
Original
|
PDF
|
J-STD-020C,
2002/95/EC
2002/96/EC
DO-214AA
08-Apr-05
vishay mk7
3 Volt transzorb
JESD22-B102D
J-STD-002B
SM6T10A
SM6T12A
SM6T12CA
|
Untitled
Abstract: No abstract text available
Text: SM6T Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform
|
Original
|
PDF
|
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
|
ck7 marking code
Abstract: No abstract text available
Text: SM6T Series Surface Mount TRANSZORB Transient Voltage Suppressor DO-214AA SMBJ Breakdown Voltage 6.8 to 220V Peak Pulse Power 600W Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) t c u rod P New Mounting Pad Layout 0.106 MAX (2.69 MAX)
|
Original
|
PDF
|
DO-214AA
MIL-STD-750,
50mVp-p
ck7 marking code
|
|
|
vishay mk7
Abstract: vishay ck7 J-STD-002 SM6T12CA
Text: SM6T Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform
|
Original
|
PDF
|
J-STD-020C,
2002/95/EC
2002/96/EC
18-Jul-08
vishay mk7
vishay ck7
J-STD-002
SM6T12CA
|
MR18R0824
Abstract: No abstract text available
Text: MR16R0824 8 BM0 MR18R0824(8)BM0 Preliminary Change History Version 1.0 (October 2000) - Preliminary * First copy. * Based on the 1.1a ver. 128/144Mbit RDRAMs(B-die, 32s banks) base Normal RIMM Datasheet. Page 0 Version 1.0 Oct. 2000 MR16R0824(8)BM0 MR18R0824(8)BM0
|
Original
|
PDF
|
MR16R0824
MR18R0824
128/144Mbit
8Mx16)
128Mb
16K/32ms
8Mx18)
144Mb
|
Untitled
Abstract: No abstract text available
Text: SM6T Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform
|
Original
|
PDF
|
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
|
marking code KE7
Abstract: SM6T33A SM6T36A CK7
Text: SM6T Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform
|
Original
|
PDF
|
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
marking code KE7
SM6T33A
SM6T36A CK7
|
DD 128
Abstract: MR18R0824
Text: MR16R0824 8 AM0 MR18R0824(8)AM0 Preliminary Change History Version 1.0 (October 2000) - Preliminary * First copy. * Based on the 1.1ver. 128/144Mbit RDRAMs(A-die, 32s banks) base Normal RIMM Datasheet. Page 0 Version 1.0 Oct. 2000 MR16R0824(8)AM0 MR18R0824(8)AM0
|
Original
|
PDF
|
MR16R0824
MR18R0824
128/144Mbit
8Mx16)
128Mb
16K/32ms
8Mx18)
144Mb
DD 128
|
vishay mk7
Abstract: SM6T6V8 SM6T68A VISHAY JESD22-B102 J-STD-002 SM6T10A SM6T12A SM6T12CA SM6T15A KX-7
Text: SM6T Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform
|
Original
|
PDF
|
J-STD-020,
2002/95/EC
2002/96/EC
DO-214AA
18-Jul-08
vishay mk7
SM6T6V8
SM6T68A VISHAY
JESD22-B102
J-STD-002
SM6T10A
SM6T12A
SM6T12CA
SM6T15A
KX-7
|
vishay ck7
Abstract: vishay mk7
Text: SM6T Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors Breakdown Voltage 6.8 to 220V Peak Pulse Power 600W DO-214AA SMBJ Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) Mounting Pad Layout
|
Original
|
PDF
|
DO-214AA
MIL-STD-750,
08-Apr-05
vishay ck7
vishay mk7
|
e61 marking code
Abstract: No abstract text available
Text: Direct RDRAM K4R271669A/K4R441869A 128/144Mbit RDRAM A-die 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.11 October 2000 Page -1 Version 1.11 Oct. 2000 Direct RDRAM™ K4R271669A/K4R441869A Change History Version 1.0 ( July 1999 ) - Preliminary
|
Original
|
PDF
|
K4R271669A/K4R441869A
128/144Mbit
356MHz
300MHz
Figure31
Figure32
128Mb/144Mb)
e61 marking code
|
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
|
Original
|
PDF
|
GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
|
B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
|
Original
|
PDF
|
GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
|
