Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA .023F GEOMETRY SURFACE MOUNT PNP SMALL SIGNAL TRANSISTOR DIE NES4403C SURFACE MOUNT PNP SMALL-SIGNAL TRANSISTOR DIE 1. Chip size.… 23 x 23 mils ± 2 mils 2. Chip thickness.… 10 ? 1.5 mils
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NES4403C
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA .023F GEOMETRY SURFACE MOUNT NPN SMALL SIGNAL TRANSISTOR DIE NES4401C SURFACE MOUNT NPN SMALL-SIGNAL TRANSISTOR DIE 1. Chip size.… 23 x 23 mils ± 2 mils 2. Chip thickness.… 10 ? 1.5 mils
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NES4401C
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Untitled
Abstract: No abstract text available
Text: Back to Bipolar Small Signal TECHNICAL DATA .023F GEOMETRY SURFACE MOUNT PNP SMALL SIGNAL TRANSISTOR DIE NES4403C SURFACE MOUNT PNP SMALL-SIGNAL TRANSISTOR DIE 1. Chip size.… 23 x 23 mils ± 2 mils 2. Chip thickness.… 10 ? 1.5 mils
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NES4403C
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chip die npn transistor
Abstract: No abstract text available
Text: Back to Bipolar Small Signal TECHNICAL DATA .023F GEOMETRY SURFACE MOUNT NPN SMALL SIGNAL TRANSISTOR DIE NES4401C SURFACE MOUNT NPN SMALL-SIGNAL TRANSISTOR DIE 1. Chip size.… 23 x 23 mils ± 2 mils 2. Chip thickness.… 10 ? 1.5 mils
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NES4401C
chip die npn transistor
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transistor B 1184
Abstract: No abstract text available
Text: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Power Transistor Dice Die type Recommended source bond wire diameter1 urn Die topology Page 1.500 0.600 SIPC08P20 SIPC08P10 250 250 - 50 0.030 0.035 0.055 0.055 0.070 0.070 0.100 0.100 SIPC20AN05 SIPC20AN05L
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SIPC08P20
SIPC08P10
SIPC20AN05
SIPC20AN05L
SIPC14AN05
SIPC14AN05L
SIPC08AN05
SIPC08AN05L
SIPC06AN05
SIPC06AN05L
transistor B 1184
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Untitled
Abstract: No abstract text available
Text: _ rz7 3GE D • 7 ci2cJ237 0030140 2 SCS-THOMSON ^7# M »ilLiraM O gS s G s-Thomson SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION:
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ci2cJ237
SGSP358
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PVAPOX
Abstract: No abstract text available
Text: /=T SGS-THOMSON ^7#» ÄMILtKgTOOMlgi BUZ11A CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate
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BUZ11A
156x156
MC-0074
PVAPOX
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C0073
Abstract: f740
Text: {Z71T,» SGS-THOMSON SKaOfflQIlLlKg'u’M O e i IR F 740 CHIP * N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:
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180x220
C-0073
C0073
f740
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON ilLiraMOIgi BUZ32 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:
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BUZ32
156x156
15x19
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Untitled
Abstract: No abstract text available
Text: /= T SGS-THOMSON * 71 HD g»I[Lli(gTIS iD(gi IRF520 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 9 5 x 9 5 mils SCHEMATIC DIAGRAM
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71TMHD
IRF520
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5N10E
Abstract: 5n05e 5N06E 5n06 SISCO transistor 1183 4n60e 14n24 5p06 6N25D
Text: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Small-Signal Transistor Dice Die type Recommended bond wire diam eter' nm Die topology Page -0 .8 .-2 .0 -0 .8 .-2 .0 SISC0.5P05E SISC3.2P05E 22 22 LA LC 1183 1183 - 1 .0 .-2 .0 SISC0.5P06E 22 LA 1183
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5P05E
2P05E
5P06E
2P10E
2P20E
4P24E
2N05E
5N05E
5N06E
5N65E
5N10E
5n06
SISCO
transistor 1183
4n60e
14n24
5p06
6N25D
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transistor IRF730
Abstract: IRF730 TESTING
Text: I SCS-THOMSON •[LIOTMIg IRF730 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 15 6x1 56 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 6100 A
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IRF730
C-0072
transistor IRF730
IRF730 TESTING
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Untitled
Abstract: No abstract text available
Text: / = T SGS-THOMSON [*^ MttJ(êir[EMD(g§ * 7 . # IRF740 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION:
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180x220
20x16
IRF740
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Untitled
Abstract: No abstract text available
Text: /= T SGS-THOMSON MD g[s] [ilLI(gre©iD(gi IRF730 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source
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IRF730
156x156
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GS 669
Abstract: MC008
Text: F=7 SGS-THOMSON * IM « SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 77x77 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:
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SGSP358
77x77
15x15
17x19
MC-0080
SGS358
GS 669
MC008
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Untitled
Abstract: No abstract text available
Text: rZ 7 ^TÆ, SGS-THOMSON Mffi iLlI gre©iO(gS IRF151 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 221 x221 mils Al A u /C r/N i/A u
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IRF151
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sgsp301
Abstract: No abstract text available
Text: SGS-THOMSON ¡y SGSP301 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM • DIE SIZE: 52x53 mils • METALLIZATION: Al Top Back Au /C r /NI /Au • BACKSIDE THICKNESS: 6100 Â 16 ± 2 mils • DIE THICKNESS: P-Vapox • PASSIVATION: • BONDING PAD SIZE:
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SGSP301
52x53
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IRF540
Abstract: IRF540CHIP
Text: SGS-THOMSON itl ¥»HD S IRF540 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 170x170 mils METALLIZATION: Top Al Back Au/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:
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IRF540
170x170
15x18
MC-0075
IRF540CHIP
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transistor b 1185
Abstract: transistor B 1184 SIPC36AN10 SIPC25AN20 SIPC36AN05
Text: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Power Transistor Dice Die type Recommended source bond wire diameter1 |im Die topology Page 0.018 SIPC36AN05 500 x 2 PH 1185 ^ D S m a x ) ^ D S |o n )m a x V Q 50 100 0.045 SIPC36AN10 500 PH 1185 200 0.120
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SIPC36AN05
SIPC36AN10
SIPC25AN20
SIPC36AN20
SIPC25AN40
SIPC36AN40
SIPC36AN40F
SIPC36N50F
SIPC42AN50
SIPC25AN50
transistor b 1185
transistor B 1184
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Untitled
Abstract: No abstract text available
Text: [Z T SGS-THOMSON ^7#» IÄiM i[L[Hg7[M» gS IRF620 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 110x110 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source
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110x110
IRF620
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BUZ21
Abstract: c0074
Text: SGS-THOMSON HUKêirMDÊi BUZ21 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 1 5 6 x 1 5 6 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 6100 A
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BUZ21
C-0074
c0074
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transistor C 639 W
Abstract: No abstract text available
Text: SGS-THOMSON •LieîWWÊ BUZ11 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 17 0x1 70 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 6100 A 16 ± 2 mils
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BUZ11
MC-007S
transistor C 639 W
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IRF540
Abstract: IRF540CHIP
Text: / T T SGS-THOMSON ^TÆ„ MfflimitgTTOMOgS IRF540 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 1 7 0 x 1 7 0 mils M ETALLIZATIO N: Top Back Al A u /C r /N i/A u BACKSIDE THICKNESS: DIE THIC KNESS: PASSIVATION: BONDING PAD SIZE:
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IRF540
MC-0075
IRF540CHIP
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Untitled
Abstract: No abstract text available
Text: f Z 7 SGS-THOMSON MTH40N06 CHIP Hö»lllLI giriS [iülO(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 221 x221 mils Al A u /C r/N i/A u
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MTH40N06
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