CGY2010G Search Results

CGY2010G Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGY2010G		Philips Semiconductors	GSM 4 W Power Amplifier		Original	PDF
CGY2010G		Philips Semiconductors	GSM 4 W Power Amplifier		Original	PDF
CGY2010G		Philips Semiconductors	GSM 4 W power amplifiers		Scan	PDF

CGY2010G Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ICS 1210 Pressure Sensor Abstract: 1210 pressure sensor ics gsm transceiver schematics for a PA amplifier design of multi section directional coupler gsm signal amplifier pressure sensor sp 20 BSR14 CGY2010G CGY2011G Text: INTEGRATED CIRCUITS DATA SHEET CGY2010G; CGY2011G GSM 4 W power amplifiers Objective specification Supersedes data of 1995 Oct 25 File under Integrated Circuits, IC17 1996 Jul 08 Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G	Original	PDF	CGY2010G; CGY2011G CGY2010G CGY2011G -129uctors SCA50 647021/1200/02/pp12 ICS 1210 Pressure Sensor 1210 pressure sensor ics gsm transceiver schematics for a PA amplifier design of multi section directional coupler gsm signal amplifier pressure sensor sp 20 BSR14
Untitled Abstract: No abstract text available Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip	Original	PDF	CGY2010G CGY2010G MGB764
NE571 Abstract: NE570 equivalent ne571 application note NE572 NE578 NE615 PCD5097 application notes NE575 NE5219 UMA1020M Text: Philips Semiconductors Semiconductors for Wireless Communications Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION	Original	PDF	CGY2010G CGY2013G CGY2011G CGY2023G CGY2021G NE570 SA570 NE571 SA571 NE571 NE570 equivalent ne571 application note NE572 NE578 NE615 PCD5097 application notes NE575 NE5219 UMA1020M
LQFP-48 footprint Abstract: schematics for a PA amplifier class c 7x7x1.4 n004 schematics for a PA amplifier 27 Mhz power amplifier power amplifier 33PF C5000 CGY2010G Text: Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% • Integrated power sensor driver The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power	OCR Scan	PDF	PCA5075 SA1620. CGY2010G; CGY2011G CGY2010G CGY2011G LQFP-48 footprint schematics for a PA amplifier class c 7x7x1.4 n004 schematics for a PA amplifier 27 Mhz power amplifier power amplifier 33PF C5000
HF power amplifier Abstract: ze 003 ic CGY2010G LQFP48 LQFP64 LQFP80 PCA5075 SA1620 Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip	OCR Scan	PDF	CGY2010G PCA5075 SA1620. 711062b HF power amplifier ze 003 ic CGY2010G LQFP48 LQFP64 LQFP80 PCA5075 SA1620
NE5205 Abstract: PCD5032 NE571 in SA612 Text: Philips Semiconductors Semiconductors for Wireless Communications _ . Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION	OCR Scan	PDF	CGY2010G CGY2011G CGY2023G NE570 NE571 NE572 NE575 NE576 NE577 NE578 NE5205 PCD5032 NE571 in SA612