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    str w 6554 a

    Abstract: STR 6554 a
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a STR 6554 a

    str w 6554 a

    Abstract: CGH40010 Large Signal Model CGH40010F str w 6554 CGH40015 CGH40015F STR 6554 a CGH40010P str f 6554 str 6808
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a CGH40010 Large Signal Model CGH40010F str w 6554 CGH40015 CGH40015F STR 6554 a CGH40010P str f 6554 str 6808

    CGH40010F

    Abstract: str w 6554 a CGH40015F CGH40010 Large Signal Model transistor s2p str w 6554 CGH40015 str 6554 CGH40010 JESD22
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F str w 6554 a CGH40015F CGH40010 Large Signal Model transistor s2p str w 6554 CGH40015 str 6554 JESD22