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    CEIF630 Search Results

    CEIF630 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CEIF630 Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF
    CEIF630B Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF

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    CEBF630B

    Abstract: CEFF630B CEIF630B CEPF630B CEBF630
    Text: CEPF630B/CEBF630B CEIF630B/CEFF630B N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEPF630B 200V 0.4Ω 9A 10V CEBF630B 200V 0.4Ω 9A 10V CEIF630B 200V 0.4Ω 9A 10V CEFF630B 200V 0.4Ω 9A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEPF630B/CEBF630B CEIF630B/CEFF630B CEPF630B CEBF630B CEIF630B CEFF630B O-220 O-263 O-262 O-220F CEBF630B CEFF630B CEIF630B CEPF630B CEBF630

    CEIF630

    Abstract: CEPF630
    Text: CEIF630 CEPF630/CEBF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 10A, RDS ON = 350mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEIF630 CEPF630/CEBF630 O-220 O-263 O-262 O-263 CEIF630 CEPF630