CEIF630 Search Results

CEIF630 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CEIF630		Chino-Excel Technology	N-Channel Enhancement Mode Field Effect Transistor		Original	PDF
CEIF630B		Chino-Excel Technology	N-Channel Enhancement Mode Field Effect Transistor		Original	PDF

CEIF630 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CEBF630B Abstract: CEFF630B CEIF630B CEPF630B CEBF630 Text: CEPF630B/CEBF630B CEIF630B/CEFF630B N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEPF630B 200V 0.4Ω 9A 10V CEBF630B 200V 0.4Ω 9A 10V CEIF630B 200V 0.4Ω 9A 10V CEFF630B 200V 0.4Ω 9A e 10V D Super high dense cell design for extremely low RDS(ON).	Original	PDF	CEPF630B/CEBF630B CEIF630B/CEFF630B CEPF630B CEBF630B CEIF630B CEFF630B O-220 O-263 O-262 O-220F CEBF630B CEFF630B CEIF630B CEPF630B CEBF630
CEIF630 Abstract: CEPF630 Text: CEIF630 CEPF630/CEBF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 10A, RDS ON = 350mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.	Original	PDF	CEIF630 CEPF630/CEBF630 O-220 O-263 O-262 O-263 CEIF630 CEPF630

Catalog Datasheet

MFG & Type

PDF

Document Tags

CEBF630B

Abstract: CEFF630B CEIF630B CEPF630B CEBF630
Text: CEPF630B/CEBF630B CEIF630B/CEFF630B N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEPF630B 200V 0.4Ω 9A 10V CEBF630B 200V 0.4Ω 9A 10V CEIF630B 200V 0.4Ω 9A 10V CEFF630B 200V 0.4Ω 9A e 10V D Super high dense cell design for extremely low RDS(ON).

Original

PDF

CEPF630B/CEBF630B CEIF630B/CEFF630B CEPF630B CEBF630B CEIF630B CEFF630B O-220 O-263 O-262 O-220F CEBF630B CEFF630B CEIF630B CEPF630B CEBF630

CEIF630

Abstract: CEPF630
Text: CEIF630 CEPF630/CEBF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 10A, RDS ON = 350mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.