15514
Abstract: No abstract text available
Text: SiB410DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiB410DK
AN609,
8029u
6830m
5384m
0019m
0110u
9058u
5505u
15514
|
Untitled
Abstract: No abstract text available
Text: IRFZ44S_RC, IRFZ44L_RC, SiHFZ44S_RC, SiHFZ44LL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFZ44S
IRFZ44L
SiHFZ44S
SiHFZ44LL
AN609,
THERMAZ44S
9021m
9076m
0860m
|
Untitled
Abstract: No abstract text available
Text: IRFP21N60L_RC, SiHFP21N60L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFP21N60L
SiHFP21N60L
AN609,
07-Jun-10
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Untitled
Abstract: No abstract text available
Text: IRFIBC40G_RC, SiHFIBC40G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFIBC40G
SiHFIBC40G
AN609,
31-May-10
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si5429
Abstract: No abstract text available
Text: Si5429DU_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Si5429DU
AN609,
5457m
6672m
2405m
2799m
3397m
0804m
0570u
4741u
si5429
|
si2366
Abstract: No abstract text available
Text: Si2366DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si2366DS
AN609,
J2523
4374u
1469m
9180m
0805u
5327u
7530m
0215u
si2366
|
Untitled
Abstract: No abstract text available
Text: IRFD014_RC, SiHFD014_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFD014
SiHFD014
AN609,
CONFIGURA5-Oct-10
3009m
0416u
6348m
9120m
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Untitled
Abstract: No abstract text available
Text: IRLR024_RC, IRLU024_RC, SiHLR024_RC, SiHLU024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRLR024
IRLU024
SiHLR024
SiHLU024
AN609,
9731m
2316m
0467m
|
Untitled
Abstract: No abstract text available
Text: Si4202DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si4202DY
AN609,
2175m
2923m
2439m
3089u
1542m
7069m
8017m
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Untitled
Abstract: No abstract text available
Text: IRFZ48R_RC, SiHFZ48R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFZ48R
SiHFZ48R
AN609,
6055m
9011m
2958m
1718m
3035m
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14093
Abstract: 75431
Text: Si9945BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si9945BDY
AN609,
3203u
3659m
8029m
3567u
2443m
3998m
0795m
14093
75431
|
TSS 6672-1
Abstract: No abstract text available
Text: Si2319CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si2319CDS
AN609,
26-May-10
TSS 6672-1
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Untitled
Abstract: No abstract text available
Text: Si3585CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si3585CDV
AN609,
9325u
2523u
9146u
1475m
2622u
0053u
7792m
3470m
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Untitled
Abstract: No abstract text available
Text: SiHFZ34S_RC, SiHFZ34L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiHFZ34S
SiHFZ34L
AN609,
4962m
9514m
4372m
1122m
6484m
|
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Untitled
Abstract: No abstract text available
Text: SiA450DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiA450DJ
AN609,
9999u
0841m
9107m
5440m
1720u
3046u
4369m
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77503
Abstract: No abstract text available
Text: Si5999EDU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si5999EDU
AN609,
7690u
1847m
5265m
5610m
1835m
0133m
6339u
77503
|
Untitled
Abstract: No abstract text available
Text: SiR826DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiR826DP
AN609,
6931m
8259m
0206m
8462m
3297m
8700m
1449m
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Untitled
Abstract: No abstract text available
Text: Si1416EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si1416EDH
AN609,
9774u
9125m
8816m
6885u
1252u
3841m
9719u
28-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SiHP7N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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SiHP7N60E
AN609,
1909m
8526m
5695m
2659m
5208m
5418m
9378m
2244m
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SiA400DJ-GE3
Abstract: 10-MAY-11
Text: SiA400DJ-GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiA400DJ-GE3
AN609,
8080u
6722m
5362m
4000m
4466u
9423u
1505m
3521m
10-MAY-11
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74366
Abstract: AN609 CT4 vishay SiHLD024
Text: IRLD024_RC, SiHLD024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRLD024
SiHLD024
AN609,
CONFIGURA-Oct-10
0426m
8968m
4501m
6212m
74366
AN609
CT4 vishay
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Untitled
Abstract: No abstract text available
Text: IRLZ24S_RC, IRLZ24L_RC, SiHLZ24S_RC, SiHLZ24L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRLZ24S
IRLZ24L
SiHLZ24S
SiHLZ24L
AN609,
8885m
1559m
1050m
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irfp31n50
Abstract: No abstract text available
Text: IRFP31N50L_RC, SiHFP31N50L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFP31N50L
SiHFP31N50L
AN609,
14-Jun-10
irfp31n50
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si88
Abstract: No abstract text available
Text: Si8800EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si8800EDB
AN609,
19-May-10
si88
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