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    CASE BFX89 Search Results

    CASE BFX89 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    CASE BFX89 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFY90

    Abstract: BFX89
    Text: , inc. - Conductor TELEPHONE: (201 376-2922 (212) 227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER , SILICON PLANAR EPITAXIAL TRANSISTORS , TO-72 METAL CASE , VERY LOW NOISE APPLICATIONS :


    Original     		PDF BFX89 BFY90 BFY90 perform62 forBFX89 BFX89

    BFY90

    Abstract: BFX89 case BFX89 BFY-90 BFY90 Data bfx89-bfy90 BFR99A 798m BFR99 208MHZ
    Text: BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER • • • SILICON PLANAR EPITAXIAL TRANSISTORS TO-72 METAL CASE VERY LOW NOISE APPLICATIONS : • TELECOMMUNICATIONS • WIDE BAND UHF AMPLIFIER • RADIO COMMUNICATIONS The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using


    Original     		PDF BFX89 BFY90 BFX89 BFY90 BFR99A. 100KHz 202MHZ, case BFX89 BFY-90 BFY90 Data bfx89-bfy90 BFR99A 798m BFR99 208MHZ

    BF689

    Abstract: 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36
    Text: STI Type: BF200 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200 VCBO: 30 VCEO: 20 hFE min: 15 hFE max: hFE A: 3.0 VCE: VCE A: hfe: fT: 550 Case Style: TO-206AF/TO-72: Industry Type: BF200 STI Type: BF183 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200


    Original     		PDF BF200 O-206AF/TO-72: BF183 BF206 BF208 BF689 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36

    BFY90

    Abstract: case BFX89 bfx89 TO-39 CASE CM4957 CM5160 CM5583 CM5943 2006W
    Text: Small Signal RF Transistors TO-39 & TO-72 Cases TO-39 TYPE NO. DESCRIPTION VCBO VCEO VEBO V (V) (V) ICBO @ VCB (µA) (V) hFE *TYP TO-72 @ IC @ VCE VCE (SAT ) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) NF CASE (dB) *TYP *TYP MIN MIN MIN MIN MAX MAX MIN MAX MAX


    Original     		PDF BFX89 BFY90 CM4957 CM5160 CM5583 CM5943 30-March BFY90 case BFX89 bfx89 TO-39 CASE CM4957 CM5160 CM5583 CM5943 2006W

    BFY90

    Abstract: BFX89 case BFX89 NF23 transistors Bfy90
    Text: Central BFX89 BFY90 TM Semiconductor Corp. NPN SILICON RF TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX89 and BFY90 are Silicon NPN Epitaxial Planar Transistors mounted in a hermetically sealed package designed for VHF/UHF amplifier, oscillator, and


    Original     		PDF BFX89 BFY90 BFX89 BFY90 RBE50) 200MHz 800MHz case BFX89 NF23 transistors Bfy90

    bfy90

    Abstract: No abstract text available
    Text: BFX89 BFY90 SILICON NPN RF TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX89 and BFY90 are silicon NPN RF transistors designed for VHF/UHF amplifier, oscillator and converter applications. MARKING: FULL PART NUMBER


    Original     		PDF BFX89 BFY90 BFX89 -65IC 800MHz 13-March bfy90

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    BFX89

    Abstract: Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684
    Text: 2SC D • û23ShQS 000474^ 4 W S I E ù T ~ Z 'tï NPN Silicon Transistor for RF Broadband Amplifier BFX 89 - SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general


    OCR Scan     		PDF 23ShQS Q62702-F296 2JS41W BFX89 Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684

    TRANSISTOR BO 346

    Abstract: BFX89 case BFX89 Power Transisitor 100V 2A Q62702-F296
    Text: B FX89 NPN Transistor for antenna amplifiers B F X 89 is an epitaxial N P N silicon RF transistor in a case 1 8 A 4 D IN 41876 TO-72 . The leads are electrically insulated from the case. This transistor is suitable for general applications and, for instance, for use in antenna and RF amplifiers up into the GHz


    OCR Scan     		PDF BFX89 BFX89 Q62702-F296 TRANSISTOR BO 346 case BFX89 Power Transisitor 100V 2A Q62702-F296

    Transistor BFX 90

    Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor
    Text: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general


    OCR Scan     		PDF 23ShQS Q62702-F296 Transistor BFX 90 transistor bfx 73 BFX 514 BFX89 b 514 transistor

    Untitled

    Abstract: No abstract text available
    Text: m BOE D " T 7^ l'\S 7^2^237 QG3D'^S T • BFX89 BFY90 SGS-THOMSON tLiOTOOiOOS S-THOMSON WIDE BAND VHF/UHF AMPLIFIER a SILICON PLANAR EPITAXIAL TRANSISTORS ■ TO-72 METAL CASE ■ VERY LOW NOISE APPLICATIONS : ■ TELECOMMUNICATIONS ■ WIDE BAND UHF AMPLIFIER


    OCR Scan     		PDF BFX89 BFY90 BFY90 BFR99A. G-t33J BFX89-BFY9Q 0030Tifl T-31-15

    BFY90

    Abstract: BFX89 BFY90 Data BFR99A case BFX89 J BFY90 bfx89-bfy90
    Text: 30E D • 7^2=1237 Q 0 3 D C^ S T ■ ' ~ T ? 1 rrz SCS-THOMSON ^ 7# > [ - \ S BFX89 BFY90 S G S-THOMSON WIDE BAND VHF/UHF AMPLIFIER i SILICON PLANAR EPITAXIAL TRANSISTORS . TO-72 METAL CASE ■ VERY LOW NOISE APPLICATIO N S : ■ TELECOMMUNICATIONS ■ WIDE BAND UHF AMPLIFIER


    OCR Scan     		PDF BFX89 BFY90 BFX89 BFY90 BFR99A. BFX89-BFY90 ---T-31-1fi 7R2T237 IS21J BFY90 Data BFR99A case BFX89 J BFY90

    BSX19 equivalent

    Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small


    OCR Scan     		PDF OT-23 BSX19 equivalent BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868

    BFX89

    Abstract: case BFX89 transistor IR 652 P
    Text: N AMER P H I L I P S / D I S C R E T E 25E D • b tiS 3 T 3 1 0 0 1 flE 2 3 ■ BFX89 . 'T -S I-iÇ ' N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the case. The transistor has a low noise, a very high power gain and good intermodulation properties.


    OCR Scan     		PDF bbS3T31 BFX89 7Z08812 7Z08857 7Z08814 T-37-15 7Z08815 BFX89 case BFX89 transistor IR 652 P

    BFW 10 fet

    Abstract: transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254
    Text: 6091788 MICRO ELECTRONICS CORP_ 820 00652 D J 3 /~>7 MICRO ELECTRONICS CORP 02 DE | bCH17fl0 DDDDbSS 1 V C E SA T CASE Pd (mVY) *C Im A) V 'c CEO (V) min max Im A l V CE (V) 167 — — — — 1 3 3 2.5 4 max 'c fT min Cob Cre* max N.F. (MHz)


    OCR Scan     		PDF 0000fc O-72J O-106 O-72G to-02 melf-002. BFW 10 fet transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254

    BF311

    Abstract: BF200 transistor BF494 bf199 BF184 BF494 BF494 BF271 BF597 BFX60 BF184 Bf240
    Text: RF-IF High Frequency Transistors POLA­ RITY IC mA VCE (V) max (V) IC (mA) min (MHz) 1 3 3 2.5 4 10 6 12 10 10 _ 0.5 0.5 0.3 0.5 . 10 10 10 10 230+ 600 300 400 700+ 0.8* 1.2 1.2 0.4+* 1.2* 3.5+ 9 3.5 CASE Pd (mW) IC (mA) VCEO (V) min max N.F. Cob Cre* max


    OCR Scan     		PDF BF115 O-72J BF152 O-106 BF153 BF155 O-72G BF158 BF311 BF200 transistor BF494 bf199 BF184 BF494 BF494 BF271 BF597 BFX60 BF184 Bf240

    MPS6539

    Abstract: BF224 BF369 bf 182 bf310
    Text: RF-IF High Frequency Transistors M A X IM U M R A T IN G S TY PE NO. PO LA ­ R IT Y CASE m W (raA ) VcEO vv CBO* (V ) Pd Ic H FE ^CE(sat) m in m ax Ic (m A ) ^CE (V ) fT C 0b r* * '-'re N .F . m ax (p F ) m ax (d B ) (V ) (m A ) m in (M H z ) 0.3 0.95


    OCR Scan     		PDF BF155 BF167 BF180 BF18I BF183 BF200 BF224 BF240 BF24I BF253 MPS6539 BF369 bf 182 bf310

    BF 331 TRANSISTORS

    Abstract: transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c
    Text: TELEFUNKEN ELECTRONIC Ö1C T> • Ö ^ O O R b 0005330 2 ■ ALlSG BFX89 TiHitPüUNliKiM] electronic T -sr-sr Creativo Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General, up to the GHz range Feature»: • Power gain 7 dB Dimensions In mm


    OCR Scan     		PDF BFX89 569-GS BF 331 TRANSISTORS transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c

    TO-206A

    Abstract: BFY 83 BFY90T BFY 99 BFY90 MOTOROLA
    Text: • MOTOROLA SC CXSTRS/R F MbE D b3fci72S4 G O T m a a MOTOROLA 4 ■MOTb T ■ SEMICONDUCTOR BFX89 BFY90 TECHNICAL DATA T h e R F L ine fT = 2 .0 G H z @ 1 0 m A HIG H FREQUENCY T R A N SISTO R S NPN SILICON HIGH-FREQUENCY TRANSISTORS N P N S IL IC O N . . . d e s ig n e d for V H F a n d U H F a p p lic a t io n s w h e r e h ig h -g a in , lo w *


    OCR Scan     		PDF b3fci72S4 BFX89 BFY90 TO-206A BFY 83 BFY90T BFY 99 BFY90 MOTOROLA

    2N3866 MOTOROLA s parameters

    Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 2N3866 MOTOROLA s parameters 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD

    KF520

    Abstract: KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784
    Text: TESLA ECIMEX, a. s. T E /1 \L /I Sem iconductor Discrete Devices Sem iconductor Discrete Devices CONTENTS . 3 TRANSISTORS. 5


    OCR Scan     		PDF 15Blatnà KF520 KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784

    mrf502 gold transistor

    Abstract: Motorola transistors MRF630 2N3948 transistor 2n4959 BFR96 MRF2369 MRF525 MRF536 MRF931 MRF911
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 mrf502 gold transistor Motorola transistors MRF630 2N3948 transistor 2n4959 BFR96 MRF2369 MRF525 MRF536 MRF931 MRF911