1108 D16
Abstract: DS90CR481 DS90CR483 DS90CR484 DS90CR485 DS90CR486
Text: DS90CR486 133MHz 48-Bit Channel Link Deserializer 6.384 Gbps General Description The DS90CR486 receiver converts eight Low Voltage Differential Signaling (LVDS) data streams back into 48 bits of LVCMOS/LVTTL data. Using a 133MHz clock, the data throughput is 6.384Gbit/s (798Mbytes/s).
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DS90CR486
133MHz
48-Bit
DS90CR486
384Gbit/s
798Mbytes/s)
1108 D16
DS90CR481
DS90CR483
DS90CR484
DS90CR485
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LVDS 30 pin cable
Abstract: 1108 D16 DS90CR481 DS90CR483 DS90CR484 DS90CR485 DS90CR486
Text: DS90CR486 133MHz 48-Bit Channel Link Deserializer 6.384 Gbps General Description The DS90CR486 receiver converts eight Low Voltage Differential Signaling (LVDS) data streams back into 48 bits of LVCMOS/LVTTL data. Using a 133MHz clock, the data throughput is 6.384Gbit/s (798Mbytes/s).
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DS90CR486
133MHz
48-Bit
DS90CR486
384Gbit/s
798Mbytes/s)
LVDS 30 pin cable
1108 D16
DS90CR481
DS90CR483
DS90CR484
DS90CR485
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Untitled
Abstract: No abstract text available
Text: DS90CR486 www.ti.com SNLS149C – FEBRUARY 2003 – REVISED MARCH 2013 DS90CR486 133MHz 48-Bit Channel Link Deserializer 6.384 Gbps Check for Samples: DS90CR486 FEATURES 1 • • • • • • 2 • • • • • Up to 6.384 Gbps Throughput 66MHz to 133MHz Input Clock Support
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DS90CR486
SNLS149C
DS90CR486
133MHz
48-Bit
66MHz
133MHz
100-pin
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Ceramic Capacitors 104
Abstract: mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1
Text: MURATA PRODUCTS 2009-2010 2009-2010 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.
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K99E-27
Ceramic Capacitors 104
mev-50a
DXW21BN7511S
SAYFP1G95AA0B00
ck 66 ul94v-0 lcd
SAYFP897MCA0B00
SAFEB1G57KE0F00
SAWEN1G84
murata enc-03r
MA300D1-1
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Untitled
Abstract: No abstract text available
Text: HY5117404B,HY5116404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY5117404B
HY5116404B
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Abstract: No abstract text available
Text: SMD Shielded Type : CDRH * D * / * Standard Series DIMENSIONS (mm) LAND PATTERNS (mm) 外形寸法図 WIRE 線種 2 5. .4 2 M ax 4. . 5. 2 4 Max.1.8 1 1. Max. 4.0 CONSTRUCTION 磁気構造図 4 1. ( 1.7µH - 33µH ) DIMENSIONS (mm) LAND PATTERNS (mm)
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CDRH3D16/HP
CDRH3D23/HP
CDRH3D28
CDRH3D28/LD
CDRH3D23/HP
100kHz
CDRH3D28
CDRH3D28/LD
100kHz
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HY5117404C
Abstract: HY5117404CJ
Text: HY5117404C,HY5116404C 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY5117404C
HY5116404C
HY5117404CJ
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lcd 10X2
Abstract: 10x2 lcd pin PC1002A-O 10x2 LCD HD66730 20 x 04 character lcd
Text: www.p-tec.net [email protected] Tel: Fax: 719 589 3122 (719) 589 3592 PC1002A-O (10x2) Character LCD Display Absolute Maximum Ratings at TA = 25 °C Features *10 Character, 2 Line *View Angle 12H or 6H *TN or STN Fluid * Extended Temperature Range available
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PC1002A-O
54x17
HD66730
lcd 10X2
10x2 lcd pin
PC1002A-O
10x2 LCD
HD66730
20 x 04 character lcd
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Untitled
Abstract: No abstract text available
Text: Surface Mount 722.00MHz SAW Filter AFS14A11-722.00-T3 Pb RoHS Compliant Moisture Sensitivity Level MSL – This product is Hermetically Sealed and not Moisture Sensitive - MSL = N/A: Not Applicable FEATURES: 1.4 x 1.1 x 0.7 mm | | | | | | | | | | | | | | |
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00MHz
AFS14A11-722
00-T3
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BFY90
Abstract: BFX89 case BFX89 BFY-90 BFY90 Data bfx89-bfy90 BFR99A 798m BFR99 208MHZ
Text: BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER • • • SILICON PLANAR EPITAXIAL TRANSISTORS TO-72 METAL CASE VERY LOW NOISE APPLICATIONS : • TELECOMMUNICATIONS • WIDE BAND UHF AMPLIFIER • RADIO COMMUNICATIONS The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using
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BFX89
BFY90
BFX89
BFY90
BFR99A.
100KHz
202MHZ,
case BFX89
BFY-90
BFY90 Data
bfx89-bfy90
BFR99A
798m
BFR99
208MHZ
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Untitled
Abstract: No abstract text available
Text: DS90CR486 www.ti.com SNLS149C – FEBRUARY 2003 – REVISED MARCH 2013 DS90CR486 133MHz 48-Bit Channel Link Deserializer 6.384 Gbps Check for Samples: DS90CR486 FEATURES 1 • • • • • • 2 • • • • • Up to 6.384 Gbps Throughput 66MHz to 133MHz Input Clock Support
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DS90CR486
SNLS149C
DS90CR486
133MHz
48-Bit
66MHz
100-pin
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an1108
Abstract: reciver
Text: DS90CR486 DS90CR486 133MHz 48-Bit Channel Link Deserializer 6.384 Gbps Literature Number: SNLS149B DS90CR486 133MHz 48-Bit Channel Link Deserializer (6.384 Gbps) General Description The DS90CR486 receiver converts eight Low Voltage Differential Signaling (LVDS) data streams back into 48 bits of
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DS90CR486
DS90CR486
133MHz
48-Bit
SNLS149B
an1108
reciver
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Untitled
Abstract: No abstract text available
Text: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter: 763.0MHz Part No: MP05489 Model: TA1243A Rev No: 2 A. MAXIMUM RATING: 1. Input Power Level: 5dBm 2. DC Voltage: 3V
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MP05489
TA1243A
768MHz)
708MHz
798MHz
973MHz
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Untitled
Abstract: No abstract text available
Text: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117400A
HY5117400A
117400A
1AD27-10-MAY9S
HY5117400AJ
HY5117400AT
Y5117400ASLT
HY5117400AR
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Untitled
Abstract: No abstract text available
Text: HY5117400A Series ••HYUNDAI 4M x 4-bit CMOS DRAM DESCRIPTION me HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. "Hie HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117400A
HY5117400A
1AD27-10-MAY94
HY5117400AJ
HY5117400ASLJ
HY5117400AT
HY5117400ASLT
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A1HV
Abstract: OQ11 SLTC
Text: “H Y U N D A I 11 • M 11 W I I I H Y 5 1 1 8 2 6 0 J 5e r i e s 4 1 1 w n e us« n « A O o ä i i » .u w or* a o o M in o 1M X 16-bit CMOS nDRAM with 2CAS &WPB DESCRIPTION The HY5118260 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118260
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16-bit
HY5118260
16-bit.
1A016-10-MAY94
GDD3543
HY5118260JC
HY5118260SLJC
A1HV
OQ11
SLTC
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PN3563
Abstract: No abstract text available
Text: I V , PN3563 PN5130 PN5132 NPN SILICON RP SMALL SIGNAL TRANSISTORS CASE TO-92A THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS. PN3563 PN5130 PN5132 EBC fill PN3563 ABSOLUTE MAXIMUM RATINGS PN5I3Q PN5132 Collector-Base Voltage
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PN3563
PN5130
PN5132
O-92A
250mW
PN3563
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HY5117400A
Abstract: No abstract text available
Text: ••H Y U N D A I HY5117400A Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit, The HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117400A
1AD27-10-M
HY5117400AJ
HY5117400ASU
HY5117400AT
HY5117400ASLT
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5117404C
Abstract: HY5117404CJ 5117404
Text: ««Timoni > * HY5117404C,HY5t16404C 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY5117404C
HY5t16404C
A0-A11)
5117404C
HY5117404CJ
5117404
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HY5117400CJ
Abstract: MAX7523
Text: - « y u n d â « HY5117400C,HY5116400C T 4Mx4, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY5117400C
HY5116400C
A0-A11)
HY5117400CJ
MAX7523
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Untitled
Abstract: No abstract text available
Text: 19-0049; Rev 0; 10/92 Palm top Com puter and Flash M em ory Power-Supply R egulators The MAX717-MAX721 provide three improvements over prior-art devices. Physical size is reduced - th e high switch ing frequencies up to 0.5MHz m ade possible by MOSFET
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MAX717-MAX721
AX717-M
AX721
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PP-T20
Abstract: HY5117400B bel power QBS
Text: HY5117400B Series HYUNDAI 4M X 4-bit CM O S DRAM DESCRIPTION The HY5117400B is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117400B
HY5117400B
Y5117400B
4b750fl
1AD46-00-MAY9S
GG0457E
HY5117400BJ
HY5117400BSLJ
PP-T20
bel power QBS
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12v DC SMPS
Abstract: 12V 2A SMPS circuit diagram AD DC SMPS MAX717 smps based 6v battery charger circuit diagram 12V SMPS 2N2955 equivalent SMPS 12V, 5V voltage regulator transistor 2n2955 Power Transistor PNP forward smps 12v
Text: 19-0049; Rev O; 10/92 /l/l/JX I/l/l Palm top C om puter an d Flash M em ory P ow er-Supply Regulators 4 Low 0.9V to 5.5V Battery Operating Range 4 Unregulated 7V to 20V DC Input Range 4 Dual Regulated Outputs The MAX717-MAX721 provide three Improvements over
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X717-M
MAX717-MAX721
100nF,
200mA.
12v DC SMPS
12V 2A SMPS circuit diagram
AD DC SMPS
MAX717
smps based 6v battery charger circuit diagram
12V SMPS
2N2955 equivalent
SMPS 12V, 5V voltage regulator transistor
2n2955 Power Transistor PNP
forward smps 12v
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116404B
Abstract: HY5117404BT
Text: - H Y U N D A I • HY5117404B,H Y5116404B 4Mx4, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY5117404B
Y5116404B
AO-A11)
116404B
HY5117404BT
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