Untitled
Abstract: No abstract text available
Text: XC6213 Series High Speed LDO Regulators, Low ESR Cap. Compatible, Ultra Small Package September 14, 2004 V6 Input Voltage Range Output Voltage Range Output Current 2.0 ~ 6.0V 1.2 ~ 5.0V 150mA APPLICATIONS Mobile phones Cordless phones, wireless communication equipment
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XC6213
150mA
SSOT-24
OT-25
OT-23-5)
400mV
100p-pAC
XC6213B302
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Untitled
Abstract: No abstract text available
Text: PTFA192401E PTFA192401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications
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PTFA192401E
PTFA192401F
PTFA192401E
PTFA192401F
240-watt
H-36260-2
H-37260-2
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LM7805
Abstract: BCP56 PTFA192401E PTFA192401F RF35 RO4350
Text: PTFA192401E PTFA192401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications
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PTFA192401E
PTFA192401F
PTFA192401E
PTFA192401F
240-watt
H-36260-2
H-37260-2
LM7805
BCP56
RF35
RO4350
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a2324
Abstract: PTFA192401E PTFA192401F RF35 RO4350 BCP56 LM7805 PTFA192401F V4
Text: PTFA192401E PTFA192401F Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,
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PTFA192401E
PTFA192401F
PTFA192401E
PTFA192401F
240-watt
H-36260-2
H-37260-2
a2324
RF35
RO4350
BCP56
LM7805
PTFA192401F V4
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Untitled
Abstract: No abstract text available
Text: PTFA192401E PTFA192401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications
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PTFA192401E
PTFA192401F
PTFA192401E
PTFA192401F
240-watt
H-36260-2
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7909 regulator
Abstract: PTFA092213ELV4
Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier
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PTFA092213EL
PTFA092213FL
PTFA092213FL
220-watt,
H-33288-6
H-34288-4/2
7909 regulator
PTFA092213ELV4
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evox rifa PEG 122
Abstract: BHC ALS capacitor Evox Rifa PEH169 Rifa PEG 124 RIFA PEG 123 Rifa PEH 165 bhc capacitor als31 Rifa PEH169 EVOX RIFA CAPACITORS PEH200 BS5267
Text: Quality Policy KEMET exceeds customer expectations through operational excellence and continuous improvement. • • • • • • Zero Defects 100% On-Time Delivery Technology Leader Lowest Total Cost of Ownership Six Sigma Process Capability World-Class Cycle Time Efficiencies
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15bis
evox rifa PEG 122
BHC ALS capacitor
Evox Rifa PEH169
Rifa PEG 124
RIFA PEG 123
Rifa PEH 165
bhc capacitor als31
Rifa PEH169
EVOX RIFA CAPACITORS PEH200
BS5267
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PTFA092213EL
Abstract: LM7805 resistor 51k transistor c331 BCP56 R250 RO4350
Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier
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PTFA092213EL
PTFA092213FL
PTFA092213EL
PTFA092213FL
220-watt,
LM7805
resistor 51k
transistor c331
BCP56
R250
RO4350
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woofer
Abstract: woofer circuit diagram bass line circuit woofer circuit diagram TA1217AF TA1217AN 5.1 woofer
Text: TA1217AN/AF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA1217AN,TA1217AF TV-SOUND PROCESSOR TA1217AN incorporates the following circuits : l Four sound processor circuit channels Sound processor circuit for left channel of stereo Sound processor circuit for right channel of stereo
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TA1217AN/AF
TA1217AN
TA1217AF
36-pin
woofer
woofer circuit diagram bass line circuit
woofer circuit diagram
TA1217AF
5.1 woofer
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2.1 woofer circuit diagram
Abstract: woofer circuit diagram bass line circuit bass treble control circuit for woofer SUB WOOFER LOWPASS FILTER CIRCUIT woofer circuit diagram 5.1 woofer sound ic WOOFER TA1217AN
Text: TA1217AN/AF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA1217AN,TA1217AF TV-SOUND PROCESSOR TA1217AN incorporates the following circuits : Four sound processor circuit channels Sound processor circuit for left channel of stereo Sound processor circuit for right channel of stereo
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TA1217AN/AF
TA1217AN
TA1217AF
36-pin
2.1 woofer circuit diagram
woofer circuit diagram bass line circuit
bass treble control circuit for woofer
SUB WOOFER LOWPASS FILTER CIRCUIT
woofer circuit diagram
5.1 woofer
sound ic
WOOFER
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CXA2194Q
Abstract: No abstract text available
Text: CXA2194Q US Audio Multiplexing Decoder Description The CXA2194Q is an IC designed as a decoder for the Zenith TV Multi-channel System and also corresponds with I2C bus. Functions include stereo demodulation, SAP Separate Audio Program demodulation, dbx noise reduction and sound
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CXA2194Q
CXA2194Q
490mVrms
48PIN
QFP-48P-L04
QFP048-P-1212
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elna capacitor 22uf
Abstract: No abstract text available
Text: PTFA041001E PTFA041001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 460 – 470 MHz Description The PTFA041001E and PTFA041001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for GSM/ EDGE applications. Thermally-enhanced packaging provides the
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PTFA041001E
PTFA041001F
100-watt,
H-30248-2
PTFA041001FT
H-31248-2
elna capacitor 22uf
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Untitled
Abstract: No abstract text available
Text: Page 1 FS: 04/93 SIEMENS AG IC-SPECIFICATION TDA 4362 Differences to the last edition Last Edition: Page 11: Page 12: DOK-Nr. V66047-S1603-C100-G1 date: 16.12.97 # P 1 1: Test values and units changed #P12: Test values and units changed #P16: Test values changed, wrong values in previous version
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V66047-S1603-C100-G1
V66047-S1603-C100-G2
B53SbQS
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Untitled
Abstract: No abstract text available
Text: TECHNOLOGY INC Tfi *1300347 0 0 0 1 7 3 ^ 7 ^ VLSI T e c h n o l o g y , in c . PRELIMINARY rT : V6:35 VT2KF9 2,064X9 FIFO MEMORY FE A T U R E S DESCRIPTION • FlraMn, flret-out dual-port memory The VT2KF9 Is a flrst-ln, flrst-out FIFO memory that uses a h igh *
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064X9
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Untitled
Abstract: No abstract text available
Text: cP September 1996 Révision 1.0 ~ DATA SHEET - £ OB2U V6482- 60/70 TG-S 16MByte (2Mx 64) CMOS EDO DRAM Module - 3.3V General Description TheEOB2UV6482-(60/70)TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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V6482-
16MByte
TheEOB2UV6482-
16-megabyte
144-pins,
V17805A-
144-pin
158x2
0070x2
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ic tea 2025
Abstract: LM2972 63821 TEA 2025 equivalent C18 ph diode 7V1N DIODE C18 ph LM2672-5 lm297 LM2672-ADJ
Text: ' July 1997 LM2672 SIMPLE SWITCHER Power Converter High Efficiency 1A Step-Down Voltage Regulator with Features General Description The LM2672 series of regulators are monolithic Integrated circuits built with a LMDMOS process. These regulators pro vide all the active functions for a step-down buck switching
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LM2672
LM2672
b50112M
010b70b
ic tea 2025
LM2972
63821
TEA 2025 equivalent
C18 ph diode
7V1N
DIODE C18 ph
LM2672-5
lm297
LM2672-ADJ
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TGS 880
Abstract: No abstract text available
Text: FUJITSU September 1996 Revision 1.0 DATA SHEET - EOB2U V6482- 60/70 T G -S 16MByte (2Mx 64) CMOS EDO DRAM Module -3.3V General Description TheEOB2UV6482-(60/70)TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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V6482-
16MByte
TheEOB2UV6482-
16-megabyte
144-pins,
MB81V17805A-
TGS 880
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Untitled
Abstract: No abstract text available
Text: September 1996 Revision 1.0 FUJITSU DATA SHEET - EDC4U V644 2/4 -(60/70)(J/T)G-S 32MByte (4Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDG4UV644(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module
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32MByte
EDG4UV644
32-megabyte
168-pins,
MB81V1
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Untitled
Abstract: No abstract text available
Text: cP August 1996 Revision 2.0 FUJI' DATA SHEET - * EDC2U V6482- 60/70 (J/T)G-S 16MByte (2Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDG2UV6482-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module orga
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V6482-
16MByte
EDG2UV6482-
16-megabyte
168-pins,
V17805A-
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PJ 976
Abstract: No abstract text available
Text: September 1996 Revision 1.0 FUJITSU DATA SHEET - EDC4U V6482- 60/70 (J/T)G-S 32MByte (4Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDG4UV6482-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module orga
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V6482-
32MByte
EDG4UV6482-
32-megabyte
168-pins,
B81V17805A-
PJ 976
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woofer circuit diagram
Abstract: TA1217AN TA1217AF TA-1217 digital sub woofer ic
Text: TO SHIBA TA1217AN/AF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T A 1 2 1 7 A N , SILICON MONOLITHIC T A 1 2 1 7 A F TV-SOUND PROCESSOR TA1217AN incorporates the following circuits : • Four sound processor circuit channels Sound processor circuit for left channel of stereo
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TA1217AN/AF
TA1217AN,
TA1217AF
TA1217AN
TA1217AN
36-pin
SDIP36-P-500-1
TA1217AN)
woofer circuit diagram
TA1217AF
TA-1217
digital sub woofer ic
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TA1217AN/AF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T A 1 717 A N mm m a • m m m. ■ v g SILICON MONOLITHIC T A 1 717 AF mm m a ■ m m m. ■ TV-SOUND PROCESSOR TA1217AN incorporates the following circuits : • Four sound processor circuit channels
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TA1217AN/AF
TA1217AN
36-pin
TA1217AN)
SDIP36-P-500-1
TA1217AF)
SSOP36-P-375-1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TA1217AN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT Tm m A 1• 9 m SILICON MONOLITHIC mA mMm 1■ 7m TV-SOUND PROCESSOR TA1217AN incorporates the following circuits : ^ i j u i j l /u i iu v ii v u it v . i i a i 11 i 13 Sound processor circuit for left channel of stereo
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TA1217AN
TA1217AN
36-pin
SDIP36-P-500-1
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Untitled
Abstract: No abstract text available
Text: TA1217AN T O SH IB A TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT Tm mA m 1• 7 SILICON MONOLITHIC 1■ 7m mA m N■ v TV-SOUND PROCESSOR TA1217AN incorporates the following circuits : • Four sound processor circuit channels Sound processor circuit for left channel of stereo
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TA1217AN
TA1217AN
36-pin
SDIP36-P-500-1
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