Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    C20000 Search Results

    SF Impression Pixel

    C20000 Price and Stock

    Abracon Corporation ABM3C-20.000MHZ-D4Y-T

    CRYSTAL 20.0000MHZ 18PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ABM3C-20.000MHZ-D4Y-T Reel 101,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.42633
    • 10000 $0.39553
    		Buy Now
    Avnet Americas ABM3C-20.000MHZ-D4Y-T Reel 10,000 12 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.37086
    • 10000 $0.37086
    		Buy Now
    Newark ABM3C-20.000MHZ-D4Y-T Reel 6,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.616
    • 10000 $0.579
    		Buy Now
    ABM3C-20.000MHZ-D4Y-T Cut Tape 1,648 1
    • 1 $0.82
    • 10 $0.716
    • 100 $0.696
    • 1000 $0.668
    • 10000 $0.668
    		Buy Now
    Chip 1 Exchange ABM3C-20.000MHZ-D4Y-T 13,757
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Avnet Abacus ABM3C-20.000MHZ-D4Y-T Reel 13,000 14 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Master Electronics ABM3C-20.000MHZ-D4Y-T 195,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.4041
    • 10000 $0.3471
    		Buy Now

    Citizen Finedevice Co Ltd CSX-750FBC20000000T

    XTAL OSC XO 20.0000MHZ CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CSX-750FBC20000000T Cut Tape 10,241 1
    • 1 $2.15
    • 10 $1.851
    • 100 $1.5975
    • 1000 $1.44224
    • 10000 $1.44224
    		Buy Now
    CSX-750FBC20000000T Digi-Reel 10,241 1
    • 1 $2.15
    • 10 $1.851
    • 100 $1.5975
    • 1000 $1.44224
    • 10000 $1.44224
    		Buy Now
    CSX-750FBC20000000T Reel 10,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.38037
    • 10000 $1.22125
    		Buy Now
    Newark CSX-750FBC20000000T Cut Tape 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.07
    • 10000 $3.07
    		Buy Now

    Eaton Bussmann AMLV22V16C20000

    VARISTOR MLV 2220 16VW 42VC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AMLV22V16C20000 Cut Tape 1,583 1
    • 1 $6.14
    • 10 $4.132
    • 100 $3.0266
    • 1000 $2.74316
    • 10000 $2.74316
    		Buy Now
    AMLV22V16C20000 Reel 800 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.125
    • 10000 $2.125
    		Buy Now
    Sager AMLV22V16C20000 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.92
    • 10000 $2.92
    		Buy Now

    Infineon Technologies AG S6J336CHTBSC20000

    TRAVEO-40NM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey S6J336CHTBSC20000 Tray 813 1
    • 1 $19.15
    • 10 $15.259
    • 100 $13.33262
    • 1000 $12.40155
    • 10000 $12.40155
    		Buy Now
    Win Source Electronics S6J336CHTBSC20000 3,600
    • 1 -
    • 10 $13.1451
    • 100 $10.6804
    • 1000 $10.6804
    • 10000 $10.6804
    		Buy Now

    Lantronix Inc XPDNC2000-01

    IC MOD DSTNI-EX 25MHZ 256KB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey XPDNC2000-01 Box 639 1
    • 1 $60.65
    • 10 $60.65
    • 100 $60.65
    • 1000 $60.65
    • 10000 $60.65
    		Buy Now
    Mouser Electronics XPDNC2000-01 1
    • 1 $60.65
    • 10 $60.65
    • 100 $60.65
    • 1000 $60.65
    • 10000 $60.65
    		Buy Now
    Symmetry Electronics XPDNC2000-01 1
    • 1 $60.65
    • 10 $60.65
    • 100 $59.17073
    • 1000 $59.17073
    • 10000 $59.17073
    		Buy Now
    Find more C20000 price and stock on Findchips.com

    C20000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


    Original     		PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    HC49U/N-R1.8432MHZT

    Abstract: No abstract text available
    Text: HA-Series Specifications 11.05L x 4.65W x 13.46H mm PDI HA-Series is a hermetically sealed quartz crystal in a HC-49U through-hole package. This crystal, designed to meet your most demanding specification, is available in standard or custom frequencies and/or with customized


    Original     		PDF HC-49U 25000Xâ 03000X 99999X 000MHz C10000 C20000 2002/95/EC MIL-STD-202 HC49U/N-R1.8432MHZT

    Untitled

    Abstract: No abstract text available
    Text: U1-Series Specifications 7.90L x 3.18W x 8.00H mm PDI U1-Series provides a broad rang of frequencies in a small profile, robust, high reliability UM1 resistance-weld enclosure. The U1 is available in a variety of frequency stabilities and tolerances, operating temperature ranges, and load capacitances and


    Original     		PDF 25000Xâ 08000X 99999X 000MHz 999MHz C10000 C20000 MIL-STD-202,

    C000H-DFFFH

    Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
    Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation


    Original     		PDF MX29LW128T/B/U/D 128M-BIT JAN/27/2003 MAR/28/2003 MAY/16/2003 MAY/29/2003 C000H-DFFFH 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh

    JESD97

    Abstract: M29DW128F TSOP56 6C80
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29DW128F TSOP56 32-Word 16Mbit 48Mbit 16Mbit TBGA64 JESD97 M29DW128F TSOP56 6C80

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


    Original     		PDF Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871

    S29WS256N

    Abstract: S71WS512NE0BFWZZ
    Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip


    Original     		PDF S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N

    M29W128FL

    Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) M29W128FL Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56

    FL128P

    Abstract: SPANSION FL128P
    Text: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


    Original     		PDF S25FL128P 104-MHz S25FL128P FL128P SPANSION FL128P

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    NS064N

    Abstract: S29NS128N S29NS256N VDC048 S29NS256
    Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70


    Original     		PDF S29NSxxxN S29NS256N, S29NS128N, S29NS064N 16/8/4M 16-bit) 32-Word S29NS256/128/64N NS064N S29NS128N S29NS256N VDC048 S29NS256

    JESD97

    Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW128F TSOP56 32-Word TBGA64 16Mbit 48Mbit 16Mbit JESD97 M29DW128F TSOP56 esn 234 D2578 5PWA

    IS29GL256

    Abstract: No abstract text available
    Text: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 90 ns


    Original     		PDF IS29GL256 32768K 16384K 16-bit) 8-word/16-byte 32-word/64-byte 128-word/256-byte 8-word/16byte IS29GL256 IS29GL256-JTLE

    MX29GL256FLT2I-90Q

    Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
    Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC


    Original     		PDF MX29GL256F PM1544 MX29GL256F 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word 100mA MX29GL256FLT2I-90Q MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544

    S25FL129

    Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024
    Text: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


    Original     		PDF S25FL129P 128-Mbit 104-MHz S25FL129P S25FL129 s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


    Original     		PDF S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63

    120R

    Abstract: C8800
    Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29LV2562M 120R C8800

    DQ141

    Abstract: No abstract text available
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW128F 32-Word 16Mbit 48Mbit 16Mbit DQ141

    l256mh113

    Abstract: L256ML123R
    Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29LV256M l256mh113 L256ML123R

    06SEC

    Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
    Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash

    Untitled

    Abstract: No abstract text available
    Text: Am29LV128MH/L Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29LV128MH/L

    Untitled

    Abstract: No abstract text available
    Text: S25FL128R 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet (Advance Information) S25FL128R Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


    Original     		PDF S25FL128R 104-MHz S25FL128R

    C350AVB

    Abstract: full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder
    Text: FUJITSU MICROELECTRONICS F U JIT S U wmmm 7flC D B 37MT7bH □D03c]4b 3 • JZ CMOS Gate Array GENERAL INFORMATION The Fujitsu CM O S gate array fam ily consists of tw en tyeight device types which are fabricated w ith advanced silicon gate CMOS technology. And more than 14 devices


    OCR Scan     		PDF 37MT7bH 74LS175 74LS181 74LS183 74LS190 74LS191 74LS192 74LS193 74LS194A 74LS195A C350AVB full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder