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STMicroelectronics BY239-800
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	BY239-800		84			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics BY239-200 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	BY239-200		1,584			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics BY239L800 RECTIFIER DIODE Rectifier Diode, 1 Phase, 1 Element, 10A, 800V V(RRM), Silicon, TO-220AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	BY239L800		531			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BY239 Datasheets (22)

Part	Manufacturer	Description	Datasheet Type	PDF
BY239	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BY239	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BY239-1000	SGS-Thomson	10A Iout, 1.0kV Vrrm General Purpose Silicon Rectifier	Scan	PDF
BY239-1000	Thomson-CSF	Shortform Semiconductor Catalogue 1982	Short Form	PDF
BY239-200	SGS-Thomson	10A Iout, 200V Vrrm General Purpose Silicon Rectifier	Scan	PDF
BY239-200	Thomson-CSF	Shortform Semiconductor Catalogue 1982	Short Form	PDF
BY239-200A	STMicroelectronics	Shortform Data Book 1988	Short Form	PDF
BY239-400	SGS-Thomson	10A Iout, 400V Vrrm General Purpose Silicon Rectifier	Scan	PDF
BY239-400	Thomson-CSF	Shortform Semiconductor Catalogue 1982	Short Form	PDF
BY239-400A	STMicroelectronics	Shortform Data Book 1988	Short Form	PDF
BY239-600	SGS-Thomson	10A Iout, 600V Vrrm General Purpose Silicon Rectifier	Scan	PDF
BY239-600	Thomson-CSF	Shortform Semiconductor Catalogue 1982	Short Form	PDF
BY239-600A	STMicroelectronics	Shortform Data Book 1988	Short Form	PDF
BY239-800	SGS-Thomson	10A Iout, 800V Vrrm General Purpose Silicon Rectifier	Scan	PDF

BY239-800	Thomson-CSF	Shortform Semiconductor Catalogue 1982	Short Form	PDF
BY239-800A	STMicroelectronics	Shortform Data Book 1988	Short Form	PDF
BY239L200	SGS-Thomson	10A Iout, 200V Vrrm General Purpose Silicon Rectifier	Scan	PDF
BY239L400	SGS-Thomson	10A Iout, 400V Vrrm General Purpose Silicon Rectifier	Scan	PDF
BY239L600	SGS-Thomson	10A Iout, 600V Vrrm General Purpose Silicon Rectifier	Scan	PDF
BY239L-800	STMicroelectronics	DIODE STANDARD RECOVERY RECTIFIER 800V 10A 2TO220AC	Original	PDF

BY239 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BY239L-800 Abstract: stmicroelectronics Text: BY239L-800  RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF av 10 A VRRM 800 V VF (max) 1.45 V A K STANDARD RECTIFIER HIGH SURGE CURRENT CAPABILITY LOW FORWARD VOLTAGE DROP TO220AC (Plastic) ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol IF(AV) Parameter	Original	PDF	BY239L-800 O220AC BY239L-800 stmicroelectronics
Marking STMicroelectronics Abstract: BY239L-800 stmicroelectronics Text: BY239L-800 RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF av 10 A VRRM 800 V VF (max) 1.45 V A K STANDARD RECTIFIER HIGH SURGE CURRENT CAPABILITY LOW FORWARD VOLTAGE DROP TO220AC (Plastic) ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol IF(AV) Parameter	Original	PDF	BY239L-800 O220AC Marking STMicroelectronics BY239L-800 stmicroelectronics
Untitled Abstract: No abstract text available Text: BY239-1250 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current10 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.140 V(FM) Max.(V) Forward Voltage1.45 @I(FM) (A) (Test Condition)30 @Temp. (øC) (Test Condition)	Original	PDF	BY239-1250 Current10 Current500u StyleTO-220AA
BY239L400 Abstract: BY239L-800 SGS-Thomson Text: BY239L-800  RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF av 10 A VRRM 800 V VF (max) 1.45 V A K STANDARD RECTIFIER HIGH SURGE CURRENT CAPABILITY LOW FORWARD VOLTAGE DROP TO220AC (Plastic) ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol IF(AV) Parameter	Original	PDF	BY239L-800 O220AC BY239L400 80THOMSON BY239L400 BY239L-800 SGS-Thomson
epsilam 10 Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239 Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial	Original	PDF	LLE18150X epsilam 10 BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
philips ferrite 4330-030 Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	PDF	M3D159 LLE18010X SCA63 125002/00/02/pp12 philips ferrite 4330-030 philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips
k2645 Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt	Original	PDF	MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
KH5395 Abstract: KH4001 BY126 KH4007 KH4004 BY239-600 40KHR4 by239 diode BY126 datasheet 1205KH14 Text: KHEL KHEL Home About Us Products Wafer Fab QA & QC Other Activities Contact RECTIFIER DIODES AXIAL MOULDED RECTIFIERS Type No 1 AMPERE KH4001 KH4002 KH4003 KH4004 KH4005 KH4006 KH4007 KH4007A KH4007B 1.5 AMPERE KH5391 KH5392 KH5393 KH5395 KH5397 KH5398 KH5399	Original	PDF	KH4001 KH4002 KH4003 KH4004 KH4005 KH4006 KH4007 KH4007A KH4007B KH5391 KH5395 KH4001 BY126 KH4007 KH4004 BY239-600 40KHR4 by239 diode BY126 datasheet 1205KH14
BDT91 Abstract: BY239 LLE15370X Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE15370X NPN microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	PDF	LLE15370X SCA53 127147/00/02/pp12 BDT91 BY239 LLE15370X
motor driver full bridge 6A Abstract: 12V dc 6A motor driver BY239-200A L9937 LDP24A AN456 BY239 74HC4050 power transistor Text: AN456 APPLICATION NOTE 6A DOOR LOCK MOTOR DRIVER FOR AUTOMOTIVE by Stefano Vergani An application of the L9937 device Full Bridge Motor Drive is described. The interface between the L9937 and a m C is discussed. A complete protections circuitry description is also given.	Original	PDF	AN456 L9937 MULTI-WATT-11 motor driver full bridge 6A 12V dc 6A motor driver BY239-200A LDP24A AN456 BY239 74HC4050 power transistor
epsilam 10 Abstract: BDT91 BY239 LFE15600X Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE15600X NPN microwave power transistor Product specification Supersedes data of January 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	PDF	LFE15600X SCA53 127147/00/02/pp12 epsilam 10 BDT91 BY239 LFE15600X
LLE16350X Abstract: BDT91 BY239 Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	PDF	LLE16350X SCA53 127121/00/04/pp12 LLE16350X BDT91 BY239
BY239 Abstract: BY239-800 diode BY239 BY239L-800 BY239 400 BY239 600 Text: / = 7 SGS-THOMSON *>7 # 5 IL E « ! BY239 L -800 RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS lF(av) 10 A V rrm 800 V V f (max) 1.45 V K A • STANDARD RECTIFIER . HIGH SURGE CURRENT CAPABILITY T 02 2 0 A C (Plastic) T 02 2 0 A C (Plastic) BY239-800	OCR Scan	PDF	BY239 T0220AC T0220AC BY239-800 BY239L-800 diode BY239 BY239L-800 BY239 400 BY239 600
Untitled Abstract: No abstract text available Text: BY239L-800 _ RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS lF av 10 A V rrm 800 V V f (max) 1.45 V • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY ■ LOW FORWARD VOLTAGE DROP ABSOLUTE MAXIMUM RATINGS (limiting values)	OCR Scan	PDF	BY239L-800

Transistor Equivalent list Abstract: J3 transistor by239 1500 100A101kp diode J3 Text: Philips Semiconductors Product specification NPN microwave power transistor LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB	OCR Scan	PDF	LFE15600X Transistor Equivalent list J3 transistor by239 1500 100A101kp diode J3
diode BY239 Abstract: bd239 equivalent BD750 Transistor Equivalent list BD 750 PERMITTIVITY* 2.55 Text: Philips Sem iconductors Product specification NPN m icrow ave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency	OCR Scan	PDF	LLE16045X diode BY239 bd239 equivalent BD750 Transistor Equivalent list BD 750 PERMITTIVITY* 2.55
Transistor AND DIODE Equivalent list Abstract: No abstract text available Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very	OCR Scan	PDF	BDT85 BY239800 BY239800; LLE16120X Transistor AND DIODE Equivalent list
diode IN4148 Abstract: Transistor Equivalent list BDT85 IN4148 LXE18300X SC15 1250-003 BY239-800 Transistor AND DIODE Equivalent list Text: # I » IK DISCRETE SEMICONDUCTORS SG41EET L X E 1 83 00 X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, S C 1 5 January 1992 Philips Semiconductors PHILIPS • b b S B ^ l D03SÜ73 ‘•T‘1 ■	OCR Scan	PDF	LXE18300X 00350fll diode IN4148 Transistor Equivalent list BDT85 IN4148 LXE18300X SC15 1250-003 BY239-800 Transistor AND DIODE Equivalent list
BY239-800 Abstract: MGA247 BDT85 LLE16120X SC15 resistor 3.3 k Class D Amplifier Circuit Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16120X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides	OCR Scan	PDF	LLE16120X OT437A. BY239-800 MGA247 BDT85 LLE16120X SC15 resistor 3.3 k Class D Amplifier Circuit
Transistor Equivalent list Abstract: diode IN4148 Transistor AND DIODE Equivalent list copper permittivity TRIMMER capacitor by239-800 erie feedthrough capacitors BDT85 IN4148 LXE16350X Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R • Interdigitated structure provides high emitter efficiency	OCR Scan	PDF	LXE16350X MBC423 OT439A. Transistor Equivalent list diode IN4148 Transistor AND DIODE Equivalent list copper permittivity TRIMMER capacitor by239-800 erie feedthrough capacitors BDT85 IN4148 LXE16350X
erie 1500 z Abstract: BDT91 BY239 LFE15600X SC15 by239 1500 Text: Philips Semiconductors Product specification NPN microwave power transistor LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides	OCR Scan	PDF	LFE15600X erie 1500 z BDT91 BY239 LFE15600X SC15 by239 1500
by239 Abstract: No abstract text available Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16350X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB	OCR Scan	PDF	LLE16350X by239
j78 transistor Abstract: j78 transistor equivalent Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very	OCR Scan	PDF	LLE15180X j78 transistor j78 transistor equivalent
Transistor AND DIODE Equivalent list Abstract: 100A101kp Text: Philips Semiconductors Product specification LLE15370X NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency	OCR Scan	PDF	LLE15370X MBD764 Transistor AND DIODE Equivalent list 100A101kp

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STMicroelectronics BY239-800

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BY239 Datasheets (22)

BY239 Datasheets Context Search

BY239L-800

Marking STMicroelectronics

Untitled

BY239L400

epsilam 10

philips ferrite 4330-030

k2645

KH5395

BDT91

motor driver full bridge 6A

epsilam 10

LLE16350X

BY239

Untitled

Transistor Equivalent list

diode BY239

Transistor AND DIODE Equivalent list

diode IN4148

BY239-800

Transistor Equivalent list

erie 1500 z

by239

j78 transistor

Transistor AND DIODE Equivalent list