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Winbond Electronics Corp W25Q128BVEBG IC FLASH 128MBIT SPI/QUAD 8WSON
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DigiKey	W25Q128BVEBG	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
White-Rodgers BVE/BVS-LOCKING-SEAL-CAP-M
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Onlinecomponents.com	BVE/BVS-LOCKING-SEAL-CAP-M					1 $64.6 10 $50.39 100 $42.23 1000 $40.6 10000 $40.6	Buy Now
White-Rodgers BVE/BVS-LOCKING-SEAL-CAP-S
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Onlinecomponents.com	BVE/BVS-LOCKING-SEAL-CAP-S					1 $42.83 10 $29.12 100 $24.4 1000 $23.46 10000 $23.46	Buy Now
White-Rodgers BVE/BVS-LOCKING-SEAL-CAP-L
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Onlinecomponents.com	BVE/BVS-LOCKING-SEAL-CAP-L					1 $64.87 10 $50.59 100 $42.4 1000 $40.77 10000 $40.77	Buy Now
Sharp Microelectronics of the Americas LH28F800BVE-BTL90
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Bristol Electronics	LH28F800BVE-BTL90		20			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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BVEB Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BVEB24TZ-WPC		YellowStone	REFLECTOR COATING TYPE HIGH-PERFORMANCE LEDS		Original	PDF

BVEB Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
H11G1 datasheet Abstract: H11G1 H11G3 H11G2 Photodarlington Text: Optoelectronics Products High Voltage Photodarlington Output with integral base-emitter resistor ; DC Sensing Input Part Number CTR @10 mA IF (%) Min BVCEO(V) BVCBO(V) BVEBO(V) tON/tOFF(µs) Max Min Min Min Max VISOACRMS (kV)1 minute 6-Pin Package H11G1 1000	Original	PDF	H11G1 H11G2 H11G3 H11G1 datasheet H11G1 H11G3 H11G2 Photodarlington
switch NPN Abstract: BSY18 2N2369 2n4390 Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF ICES ICEV	Original	PDF	2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390
SM58B Abstract: transistor 0190 8178 LE17 Text: SILICON NPN TRANSISTOR SM58B • Advanced Distributed Base Technology • Designed For Use In Electronic Ballast Applications • Efficient Power Switching ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated BVCBO BVCEO BVEBO IC ICM IB PD TJ Tstg	Original	PDF	SM58B O-220 SM58B transistor 0190 8178 LE17
Untitled Abstract: No abstract text available Text: FMMT491 Medium power NPN transistor in SOT23 Summary BVCEO > 60V BVEBO > 7V IC cont = 1A PD = 500mW RCE(sat) = 160m⍀ at 1A Complementary part number : FMMT591 Description C Medium power planar NPN bipolar transistor. Features • VCE(sat) maximum specification improvement	Original	PDF	FMMT491 500mW FMMT591 FMMT491TA D-81541
ZXTN5551 Abstract: sot223 marking 840 Text: A Product Line of Diodes Incorporated ZXTN5551G 160V NPN VOLTAGE TRANSISTOR Features • • • • • • • • Mechanical Data BVCEO > 160V BVEBO > 6V IC = 600mA Continuous Collector Current Low Saturation Voltage 150mV max @10mA hFE specified up to 50mA for a high gain hold up	Original	PDF	ZXTN5551G 600mA 150mV AEC-Q101 OT223 J-STD-020 MIL-STDF-202 DS33671 ZXTN5551 sot223 marking 840
transistor 13003L Abstract: APT13003LZ Text: A Product Line of Diodes Incorporated Green APT13003L 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V   BVCES > 700V   BVEBO > 9V  IC = 0.8A high Continuous Collector Current  Lead-Free Finish; RoHS Compliant Notes 1 & 2	Original	PDF	APT13003L MIL-STD-202, 200mg DS36306 transistor 13003L APT13003LZ
GU13005S Abstract: No abstract text available Text: A Product Line of Diodes Incorporated Green APT13005S 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V   BVCES > 700V   BVEBO > 9V  IC = 3.2A high Continuous Collector Current  Lead-Free Finish; RoHS Compliant Notes 1 & 2	Original	PDF	APT13005S O220F-3 MIL-STD-202, 400mg 340mg O220F-3: 1500mg DS36309 GU13005S
2N1015 Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B Text: POWER TRANSISTORS • PT TYPE NO. TO-82 m MAXIMUM RATINGS 25C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX le A Va V _ Sat Test Voltages Conditions le fa I ebo Va V« V A ma V A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5	OCR Scan	PDF	2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B
2N424 Abstract: 2N1722 2N389 to-53 2N389A 2N5067 2N5068 2N5630 2N5631 2N5632 Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2	OCR Scan	PDF	2N5067 2N5068 N5069 N5629 2N5630 2N5631 2N5632 2N5633 2N5634 TWX-510-224-6582 2N424 2N1722 2N389 to-53 2N389A
Untitled Abstract: No abstract text available Text: 2N 4123 NPN SILICO N IV IIC R O PLANAR EPITAX IA L bvebo C o lle cto r C utoff C urrent JCB0 Em itter Cutoff Current ^EBO Base-Em itter S aturation Voltage DC Current Gain SYMBOL BVCB0 bvceo MICRO FI F P T P O N ir^ I TH l\ V / lllV < 0 1 .1 V . MIN 40 30	OCR Scan	PDF	O-92A 2N4123 2N4124
NTE37 Abstract: NTE43 NTE50 NTE175 NTE36 NTE42 NTE45 T0126 T066 NTE55 Text: BI-POL AR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) •c BVCBo BVCeo BVEbo »FE Pd «T 12 160 140 6 100 100 15 2 400 350 6 50 35 20 7a 0.5 300 300 3 92 20 SIP-5 8a 0.05 100 100 5 400 Min 0.2/Unit 0.4 Total 100	OCR Scan	PDF	NTE36 59alt NTE36) 37MCP NTE36 NTE37 NTE175) T0126tchmode NTE55) T0220 NTE37 NTE43 NTE50 NTE175 NTE42 NTE45 T0126 T066 NTE55
Untitled Abstract: No abstract text available Text: POWER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25'C BV cbo B V ceo BVebo Ic V V Watts V A Ic VCE A V Sat Test Voltages Conditions VCE Ib V be Ic I ebo V V A A ma hFE MIN MAX 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10 250 2000 4	OCR Scan	PDF	2N2226 2N2227 2N2228 2N2229 2N2230 2N2231 2N3477 0Q43SC TWX-510-224-6582 O-114
ECG189 Abstract: ECG181 ECG162 ECG164 ECG186A ECG179 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG180 ECG172A ECG188 Text: Transistors cont'd E C G Type D escrip tio n and A pplicatio n (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To B a se V o lts Collector To Em itter V olts B a se to Em itter V o lts b v CBO b v CEO bvebo M ax. D e v ice D iss. P p W atts	OCR Scan	PDF	ECG162 ECG163A ECG164 ECG165 ECG171 BC6296) O-202 ECG172A O-92HS ECG192A ECG189 ECG181 ECG186A ECG179 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG180 ECG188
C9853 Abstract: No abstract text available Text: I\NE5 C9853 ^1 P ^NEW ENGLAND SEM ICONDUCTOR LOW LEVEL SWITCHING SILICON EPITAXIAL JUNCTION PNP TRANSISTORS • LOW (EC (sat • HIGH BVebo • ULTRA LOW LEAKAGE • LOW C* ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS MMMCTM SYMBOL UNITS C9S53 Collector To Emitter Voliate	OCR Scan	PDF	C9853 C9853 lg-200 20QMA M46-1158

germanium transistor ac 128 Abstract: germanium transistors NPN AC128 germanium af transistors germanium transistors pnp germanium npn pnp germanium transistor AC 128 Text: High Dissipation Germanium Transistors PIMP and NPN A F Alloy Transistors in T 0 1 metal case Type BVceo bvebo V V V 1CM A w °c hF E ^ v C B / ld V/ma f T ^VC E /'c1 MHz (V /m A I uA (V) — 16 32 32 10 10 1.0 1.0 0.22 0.22 90 90 60 . 175 (0/300) 6 0 . 175 (0/300)	OCR Scan	PDF
PN5133 Abstract: No abstract text available Text: DtVICE TYPE PA C KAG E BVCEO BVCBO BVEBO ICBO @ VCB IVI M I N {VI M I N IVI M I N 1-.A MA X IVI HFE VC & 1C MIN MAX \| V1 COB FT l\|.IIM A * iM H /\| 150 150 4 2 50 15 15 16 3 5 10 250 250 300 150 200 l*tA l PN4962 PN4963 PN5126 P N 5 I2 7 PN5128 N PN NPN	OCR Scan	PDF	PN4962 PN4963 PN5126 PN5128 PN5131 PN5132 PN5133 O-237 PN5133
2n3547 Abstract: 2N3549 Text: Small Signal Transistors TO-18 Case Continued TYPE NO. 2N2896 2N2897 DESCRIPTION (V) (V) (V) (lA) MIN MIN MIN MAX ICES "IC E V e ic h FE BVCBO BVCEO BVEBO •CBO « VCBO (mA) (V) MIN VCE V C E (S i iT) IC Cob (V) (V) (mA) MAX MAX (pF) MAX n- NF ton	OCR Scan	PDF	2N2896 2N2897 2N2906A 2N2907A 2N2952 2N3009 2N3011 2N3012 2N3013 2N3014 2n3547 2N3549
1ff TRANSISTOR SMD MARKING CODE Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p Text: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369	OCR Scan	PDF	DDDQS11 OT-23 350mW CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 1ff TRANSISTOR SMD MARKING CODE smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
PN2897 Abstract: PN2857 Text: DEVICE TYPE PACKAGE BVCEO BVCBO BVEBO CBO @ VCB IV I M IN I V M IN (V I M IN f« n A ) MAX IV ) HFE @ VC & 1C M IN MA* IV i i * "A i FT COB i \|. n m a • lM H ; i PN2353 PN2368 PN2369 PN2369A PN2405 NPN TO-92 (721 NPN TO-92 (72) NPN TO-92 ( 72) NPN TO-92 (72)	OCR Scan	PDF	PN2353 PN2368 PN2369 PN2369A PN2405 PN2475 PN2476 PN2477 PN2481 PN2483 PN2897 PN2857
diode t48 Abstract: ECG2302 ECG2305 t48 diode ECG488 ECG2300 ECG2310 ECG481 ECG2312 ECG2307 Text: Transistors cont'd Collector To Base Volts BVceo Description and Application ECG Type ECG478 ¡ 1 ECG479 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Emitter Volts bvceo Base to Emitter Volts BVeb O Max. Collector Current Ig Amps Max.	OCR Scan	PDF	ECG478 RF-50F6 ECG479 ECG480 ECG481 RF-38F6B ECG482 RF-23F6E ECG483 diode t48 ECG2302 ECG2305 t48 diode ECG488 ECG2300 ECG2310 ECG2312 ECG2307
2N4425 Abstract: GES6220-J1 2N3404 2N3405 GES6220 HS5306 Text: Sm all signal Transistors TO-92HS Case PD @ TC =25°C =1 0Watt TYPE NO. 2N3402 POLARITY BVc b o BVc e O NPN bveb0 >CBO v CBO <V) (V) (V) <nA) MIN MIN MIN MAX 25 25 5.0 100 hl•E 00 MIN o lC e v CE <mA) (V) MAX NF VCE(SA T ) « ' C c ob <mA) m (MHz) (dB)	OCR Scan	PDF	O-92HS 2n3402 2n3403 2n3404 2n3405 2n4425 hs3402 hs3403 ges6015-j1 ges6016-j1 GES6220-J1 GES6220 HS5306
2N1620 Abstract: 2N1211 N5069 2N1886 2N2032 2N5631 JANTX 2N389 2N389A 2N5067 2N5068 Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2	OCR Scan	PDF	2N5067 2N5068 N5069 N5629 2N5630 2N5631 2N5632 2N5633 2N5634 TWX-510-224-6582 2N1620 2N1211 2N1886 2N2032 2N5631 JANTX 2N389 2N389A
Untitled Abstract: No abstract text available Text: r le = 5.0 AMPS CONTINUED DATA P D@ 100°C <§> BVeb0 VOLTS JZ DEVICE VcE VcE sat @ lc SHEET 5.0 0.75 4.5 4.5 0.5 0.075 0.8 0.8 15 15 4.0 4.0 1.0 1.0 1.0 2.5 2.5 2.5 0.25 0.25 0.25 4.0 4.0 4.0 5.0 5.0 5.0 10.0 1.5 1.5 0.6 0.9 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5	OCR Scan	PDF	2N4150 2N4240 2N4395 2N4396 2N4913 2N4914 2N4915 2N5152 2N5154 2N5237
Untitled Abstract: No abstract text available Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo	OCR Scan	PDF	NTE248) NTE247) NTE250) NTE275) NTE244) NTE243) NTE246) NTE245) D003SSD

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BVEB Search Results

BVEB Price and Stock

Winbond Electronics Corp W25Q128BVEBG

White-Rodgers BVE/BVS-LOCKING-SEAL-CAP-M

White-Rodgers BVE/BVS-LOCKING-SEAL-CAP-S

White-Rodgers BVE/BVS-LOCKING-SEAL-CAP-L

Sharp Microelectronics of the Americas LH28F800BVE-BTL90

BVEB Datasheets (1)

BVEB Datasheets Context Search

H11G1 datasheet

switch NPN

SM58B

Untitled

ZXTN5551

transistor 13003L

GU13005S

2N1015

2N424

Untitled

NTE37

Untitled

ECG189

C9853

germanium transistor ac 128

PN5133

2n3547

1ff TRANSISTOR SMD MARKING CODE

PN2897

diode t48

2N4425

2N1620

Untitled

Untitled