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    United Chemi-Con Inc LESM050010P1BV0E

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    DigiKey LESM050010P1BV0E Bulk 264 1
    • 1 $3.42
    • 10 $2.657
    • 100 $2.06
    • 1000 $1.70631
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    Mouser Electronics LESM050010P1BV0E 225
    • 1 $3.5
    • 10 $2.3
    • 100 $2.11
    • 1000 $1.93
    • 10000 $1.78
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    United Chemi-Con Inc LHDM010330CTBV0E

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    DigiKey LHDM010330CTBV0E Bulk 132 1
    • 1 $9.44
    • 10 $7.322
    • 100 $5.6663
    • 1000 $4.9933
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    United Chemi-Con Inc LHDM020200CYBV0E

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    DigiKey LHDM020200CYBV0E Bulk 50 1
    • 1 $26.63
    • 10 $20.636
    • 100 $16.4312
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    United Chemi-Con Inc LHDM015301DZBV0E

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    DigiKey LHDM015301DZBV0E Bulk 15 1
    • 1 $41.43
    • 10 $32.076
    • 100 $27.2926
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    United Chemi-Con Inc LHDM010401DYBV0E

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    DigiKey LHDM010401DYBV0E Bulk 1
    • 1 $20.07
    • 10 $15.552
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    BV0E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bv0T

    Abstract: bv0e NEC L213 FO09B2 f57a EB S913 l914 F204A L462 D1H01
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original
    PDF PD6782X PD6783X A11957XJ2V0UM00 bv0T bv0e NEC L213 FO09B2 f57a EB S913 l914 F204A L462 D1H01

    se617

    Abstract: SE641 transistor f423 sd667 transistor hh 004 transistor f422 bv0T F423 n010x L442
    Text: Block Library CMOS-9HD Family, EA-9HD Family CMOS Gate Array, CMOS Embedded Array Ver.6.0 Document No. Date Published A13052EJ6V0BL00 6th edition December 2000 NS CP(K) NEC Corporation 1997 Printed in Japan [MEMO] Block Library A13052EJ6V0BL Summary of Contents


    Original
    PDF A13052EJ6V0BL00 A13052EJ6V0BL se617 SE641 transistor f423 sd667 transistor hh 004 transistor f422 bv0T F423 n010x L442

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358
    Text: Design Manual CMOS-8L Family CMOS Gate Array Ver. 5.0 Document No. A12158EJ5V0DM00 5th edition Date Published June 1999 N CP(K) 1997, 1998 Printed in Japan 1 [MEMO] 2 Design Manual A12158EJ5V0DM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS


    Original
    PDF A12158EJ5V0DM00 Semiconductor2/9044 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358

    MJE2370

    Abstract: transistor mje29 MJE30 2N5190 MOTOROLA MJE31 mje29 MJE4918 Motorola transistors 2N5192 MJE32 2N6122 transistor
    Text: MOTOROLA SC -CDIODES/OPTO]- 6367255 MOTOROLA "Ï4 SC DE | b 3 t . 7 5 S S DIODES/OPTO 34C O D a ? 1^ 37933 SILICON POWER TRANSISTOR DICE (continued) 2C5192 DIE NO. — NPN LINE SOURCE — PL500.E248 NPN 2C5195 DIE NO. — PNP LINE SOURCE — PL500.E249 /


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    PDF PL500 2C5192 2C5195 2N5190 2N5191 2N5192 2N5869 2NS870 2N6121 MJE2370 transistor mje29 MJE30 2N5190 MOTOROLA MJE31 mje29 MJE4918 Motorola transistors 2N5192 MJE32 2N6122 transistor

    qe 200

    Abstract: C1002
    Text: International IOR Rectifier Provisional Data Sheet PD-9.1190 IRGNIN150K06 Low conduction loss IGBT "CHOPPER" IGBT INT-A-PAK VCE = 600V lc = 100 A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated


    OCR Scan
    PDF IRGNIN150K06 C-1002 qe 200 C1002