BTB1424N3
Abstract: BTD2150N3
Text: CYStech Electronics Corp. Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2006.10.25 Page No. : 1/5 Low VCE sat NPN Epitaxial Planar Transistor BTD2150N3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.1A • Excellent current gain characteristics
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PDF
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C848N3-A
BTD2150N3
BTB1424N3
OT-23
Pw350s,
UL94V-0
BTB1424N3
BTD2150N3
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BTB1424N3
Abstract: BTD2150N3
Text: CYStech Electronics Corp. Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2004.11.08 Page No. : 1/4 Low VCE sat NPN Epitaxial Planar Transistor BTD2150N3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.1A • Excellent current gain characteristics
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Original
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PDF
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C848N3-A
BTD2150N3
BTB1424N3
OT-23
UL94V-0
BTB1424N3
BTD2150N3
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BTB1424N3
Abstract: BTD2150N3
Text: CYStech Electronics Corp. Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2004.09.30 Page No. : 1/5 Low VCE sat PNP Epitaxial Planar Transistor BTB1424N3 Features • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.3V(typ)(IC=-2A, IB=-100mA).
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Original
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PDF
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C817N3-R
BTB1424N3
-100mA)
BTD2150N3
OT-23
UL94V-0
BTB1424N3
BTD2150N3
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BTB1424N3
Abstract: BTD2150N3 N3 SOT-23 transistor marking 2A H
Text: CYStech Electronics Corp. Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2006.10.13 Page No. : 1/5 Low VCE sat PNP Epitaxial Planar Transistor BTB1424N3 Features • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.25V(typ)(IC=-2A, IB=-100mA).
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Original
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PDF
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C817N3-R
BTB1424N3
-100mA)
BTD2150N3
OT-23
UL94V-0
BTB1424N3
BTD2150N3
N3 SOT-23
transistor marking 2A H
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