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    Essentra Components CBSS110A

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    onsemi BSS110

    MOSFET P-CH 50V 170MA TO92-3
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    Glenair Inc MWDM2L-15PCBSS-.110

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    BSS110 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSS110 Fairchild Semiconductor TRANS MOSFET P-CH 50V 0.17A 3TO-92 Original PDF
    BSS110 Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    BSS110 Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    BSS110 Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor Original PDF
    BSS110 Siemens Original PDF
    BSS110 Siemens SIPMOS Small-Signal Transistor Original PDF
    BSS110 Siemens SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) Original PDF
    BSS110 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BSS110 Fairchild Semiconductor P -Channel Enhancement Mode Field Effect Transistor Scan PDF
    BSS110 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BSS110 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BSS110 Unknown FET Data Book Scan PDF
    BSS110 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BSS110 National Semiconductor P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    BSS110 Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor Scan PDF
    BSS110E6288 Infineon Technologies Transistor Mosfet P-CH 50V 0.17A 3TO-92 T/R Original PDF
    BSS110E6325 Infineon Technologies Transistor Mosfet P-CH 50V 0.17A 3TO-92 T/R Original PDF

    BSS110 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BSS110 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)170m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)680m @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)630m Minimum Operating Temp (øC)-55


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    PDF BSS110

    BSS110

    Abstract: BSS84
    Text: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


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    PDF BSS84 BSS110 BSS84: BSS110: BSS110

    BSS110

    Abstract: BSS84 CBVK741B019 F63TNR PN2222N
    Text: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


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    PDF BSS84 BSS110 BSS84: BSS110: BSS110 CBVK741B019 F63TNR PN2222N

    BSS110

    Abstract: BSS84
    Text: May 2000 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original
    PDF BSS84 BSS110 BSS84: BSS110: BSS110

    BSS110

    Abstract: CGY20
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 07 Philips Semiconductors Product specification P-channel enhancement mode


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    PDF BSS110 MAM144 CGY2020G SCA50 647021/1200/01/pp12 BSS110 CGY20

    DS2505

    Abstract: 007H DS2505P DS2505T DS2505V 2n7000 equivalent
    Text: DS2505 DS2505 16K bit Add–Only Memory FEATURES • 16384 bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground • Unique, factory–lasered and tested 64–bit registration number (8–bit family code + 48–bit serial number


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    PDF DS2505 DS2505 007H DS2505P DS2505T DS2505V 2n7000 equivalent

    dallas 2502

    Abstract: dallas ds2502 C3H 6-pin SOIC DS2502 BSS110 DS2502P DS2502S DS2502T DS2502V DS2502Y
    Text: DS2502 DS2502 1Kbit Add–Only Memory FEATURES PIN ASSIGNMENT • 1024 bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground • Unique, factory–lasered and tested 64–bit registration number (8–bit family code + 48–bit serial number


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    PDF DS2502 dallas 2502 dallas ds2502 C3H 6-pin SOIC DS2502 BSS110 DS2502P DS2502S DS2502T DS2502V DS2502Y

    Untitled

    Abstract: No abstract text available
    Text: DS2406 Dual Addressable Switch Plus 1kbit Memory www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT Open drain PIO pins are controlled and their logic level can be determined over 1-Wire bus for closed-loop control Replaces and is fully compatible with


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    PDF DS2406 DS2407 DS2406 64-bit

    DS2480B

    Abstract: No abstract text available
    Text: DS2480B Serial 1-Wire Line Driver with Load Sensor www.maxim-ic.com FEATURES § § § § § § § § § § § § § Universal, Common-Ground Serial Port to 1Wire Line Driver for MicroLAN Applications Works with All iButtons® and MicroLANCompatible 1-Wire Slave Devices


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    PDF DS2480B 5130ms DS2480B

    Untitled

    Abstract: No abstract text available
    Text: DS1985 16-kbit Add-Only iButtonÒ www.iButton.com SPECIAL FEATURES § § § § § § § § 16384 bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground EPROM partitioned into sixty-four 256-bit pages for randomly accessing packetized


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    PDF DS1985 16-kbit 256-bit

    TD2A

    Abstract: B7S2 BSN10A TLC2272 4066 74AC04 MAX232N DATASHEET TD1A S1 UM1 MAX232N
    Text: 20k CCW G N D 1 CONS1:4 CONS1:3 2 3 QP3 MPS2907A XM1 10MHz 2 A 1 3 14 n/c 15 MCLR 1N5242B 2 35 12 VCC QO1 DS1 1N5817 VN2222LL DO1 AOUT1 AOUT2 TRIGGER VREF TP2 XO1 GND GND <OSC2 MCLR VDD VDD 3 4 5 6 7 8 22p 44 43 42 41 39 38 37 36 TD1A TD1B TD2A TD2B DISCH


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    PDF MPS2907A 10MHz 1N5242B 1N5817 VN2222LL 74AC04 BSN10A 74AC0 74HC164 TD2A B7S2 BSN10A TLC2272 4066 74AC04 MAX232N DATASHEET TD1A S1 UM1 MAX232N

    Untitled

    Abstract: No abstract text available
    Text: DS2480B Serial to 1-Wire Line Driver FEATURES • •           Universal, Common-Ground Serial Port to | 1-Wire Line Driver Works with All iButton® and 1-Wire Slave Devices Communicates at Standard and Overdrive 1-Wire speed and Serial Port Data Rates of


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    PDF DS2480B RS232

    SP2083

    Abstract: ST72F344 ST72F521 74FCT 74HCT AN1179 ST662A ST72344 ST72F264 74HC40103
    Text: ST7 FAMILY ICC Protocol REFERENCE MANUAL April 2003 1 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF


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    PDF

    EPROM MEMORY

    Abstract: ic rom 2816 DS1986 DS1986-F3 DS9092 DS9093F DS9093RA DS9096P DS9101 2816b
    Text: 19-4893; Rev 8/09 DS1986 64Kb Add-Only iButton www.maxim-ic.com COMMON iButton FEATURES SPECIAL FEATURES • •        65536 bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground


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    PDF DS1986 142kbps 256-bit H020201. EPROM MEMORY ic rom 2816 DS1986 DS1986-F3 DS9092 DS9093F DS9093RA DS9096P DS9101 2816b

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    BSS84

    Abstract: BSS110
    Text: FAIRCHILD M ay 1999 MICDNDUCTÜR i BSS84 / BSS110 P -Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


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    PDF BSS84 BSS110 BSS84: BSS110: BSS110. BSS110

    Untitled

    Abstract: No abstract text available
    Text: F /M R C H II-D May 1999 M ICONDUCTQR i BSS84 / BSS110 P -Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


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    PDF BSS84 BSS110 BSS84: BSS110: BSS110.

    bss110

    Abstract: 017adc bss84
    Text: PAIRCHII-D June 1995 M ICDNDUCTQ R tm BSS84/ BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


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    PDF BSS84/ BSS110 BSS84: BSS110: BSS84 017adc

    BSS84

    Abstract: ROB SOT23 BSS110
    Text: National Semiconductor~ June 1995 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


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    PDF BSS84 BSS110 BSS84: BSS110: b501130 0Q401fl3 ROB SOT23 BSS110

    TRANSISTOR D 570

    Abstract: BSS110 INFINEON BSS110 B34 transistor
    Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS110 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High speed switching • No secondary breakdown. APPLICATIONS • Intended for use as a Line current interruptor in


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    PDF BSS110 nat25Â 7110fl2b 0CH3015 TRANSISTOR D 570 BSS110 INFINEON BSS110 B34 transistor

    16-Bit-CRC

    Abstract: DS1985 DS1985-F3 DS1985-F5 DS9092 DS9093F DS9093RA DS9096P DS9101
    Text: DS1985 "I 6K SPECIAL FEATURES • 163 8 4 -b its Electrically Program m able Read Only M em ory EPR O M com m unicates with the econom y of one signal plus ground • EPROM partitioned into s ix ty -fo u r 2 5 6 -b it pages for random ly accessing packetized data records


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    PDF DS1985 16384-bits 256-bit 16-Bit-CRC DS1985 DS1985-F3 DS1985-F5 DS9092 DS9093F DS9093RA DS9096P DS9101

    Untitled

    Abstract: No abstract text available
    Text: DS1986 PRELIMINARY 64K bit Add— Only {Button SPECIAL FEATURES COMMON {Button FEATURES • 6 5 5 36 -b its Electrically Program mable Read Only M em ory EPROM com m unicates with the econom y of one signal plus ground • Unique, fa ctory-lasered and tested 6 4 -b it registra­


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    PDF DS1986

    BSS97

    Abstract: 2SK564 BSS95 J3303 2SK616 buz349 2SK562 BUZ350 BSS98 BSS101
    Text: SÉ*G siPMos«npicjnz., mííMüs-FET07r>ígíA a^\ iz)i,ammitâumæ£xyi&ÿi<D 4 IS H « ® *S S It« « A r5 *lC « fc O , r|])ALM aS-s±yV°9-M OS-FET^Z:'íífflU/c/-c j-^-ro jt* i= • e t ^ v ís ía •Z'fy+yymm m • M u ffig •-tzJb^ftCD/JvM-íb


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    PDF BSS110 BSS98 BUZ71L T0220 BUZ71 BUZ10 BUZ11A BSS97 2SK564 BSS95 J3303 2SK616 buz349 2SK562 BUZ350 BSS101

    BSS87

    Abstract: BSP315 SOT223 BSP171 BSS125
    Text: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type M axim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP 125 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSP297 BSP298 BSP299 BSP315 BSP316 BSP317


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    PDF BSP17 BSP88 BSP89 BSP92 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSS87 BSP315 SOT223 BSS125