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    BSM25GD12 Price and Stock

    Infineon Technologies AG BSM25GD120DN2BOSA1

    IGBT MOD 1200V 35A 200W
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    DigiKey BSM25GD120DN2BOSA1 Tray 10
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    Infineon Technologies AG BSM25GD120DN2E3224BOSA1

    IGBT MOD 1200V 35A 200W
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    Infineon Technologies AG BSM25GD120DN2E3224BPSA1

    LOW POWER ECONO AG-ECONO2A-211
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    Infineon Technologies AG BSM25GD120DN2BPSA1

    Transistor IGBT Module N-CH 1200V 35A 20V Screw Mount Tray - Trays (Alt: BSM25GD120DN2BPSA1)
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    Infineon Technologies AG BSM25GD120DN2E3224

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    Bristol Electronics BSM25GD120DN2E3224 740
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    BSM25GD12 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSM25GD120D Siemens IGBT Module Scan PDF
    BSM25GD120D2 Eupec TRANS IGBT MODULE N-CH 1200V 35A 17IS2 Original PDF
    BSM25GD120D2 Siemens IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) Original PDF
    BSM25GD120DLCE3224 Eupec TRANS IGBT MODULE N-CH 1200V 50A Original PDF
    BSM25GD120DLCE3224 Eupec IGBT Module Original PDF
    BSM25GD120DN2 Eupec IGBT Power Module Original PDF
    BSM25GD120DN2 Eupec IGBT Power Module Original PDF
    BSM25GD120DN2 Infineon Technologies IGBT Power Module Original PDF
    BSM25GD120DN2 Infineon Technologies TRANS IGBT MODULE N-CH 1200V 35A 17ECONOPACK 2 Original PDF
    BSM 25 GD120DN2E3224 Eupec Original PDF
    BSM25GD120DN2E3224 Eupec TRANS IGBT MODULE N-CH 1200V 35A 17ECONOPACK 2K Original PDF
    BSM25GD120DN2E3224 Eupec Original PDF
    BSM25GD120DN2E3224 Eupec IGBT Power Module Original PDF
    BSM25GD120DN2E3224 Infineon Technologies Circuit Diagram Original PDF
    BSM25GD120DN2E324 Eupec IGBT, IGBT Power Module, VCG 1200 V, VCE 1200 V, IC 35 A Original PDF
    BSM25GD120DNE32242 Eupec IGBT Power Module Original PDF

    BSM25GD12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE 394

    Abstract: BSM25GD120DLCE3224 BSM25GD120DLC-E3224
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage


    Original     		PDF BSM25GD120DLCE3224 BSM25GD120DLC-E3224 DIODE 394 BSM25GD120DLCE3224

    BSM25GD120DLCE3224

    Abstract: DIODE 394
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF BSM25GD120DLCE3224 BSM25GD120DLCE3224 DIODE 394

    Untitled

    Abstract: No abstract text available
    Text: SIGC42T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type VCE ICn This chip is used for: • power module BSM25GD120DLC E3224


    Original     		PDF SIGC42T120CL BSM25GD120DLC E3224 C67078-A4675A001 C67078-A4675A002 7151-P,

    BSM25GD120DLCE3224

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF BSM25GD120DLCE3224 BSM25GD120DLCE3224

    Untitled

    Abstract: No abstract text available
    Text: SIGC42T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type VCE ICn This chip is used for: • power module BSM25GD120DLC E3224


    Original     		PDF SIGC42T120CL BSM25GD120DLC E3224 C67078-A4675A001 C67078-A4675A002 7151-P,

    BSM25GD120DLCE3224

    Abstract: DIODE 394
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF BSM25GD120DLCE3224 BSM25GD120DLC-E3224 BSM25GD120DLCE3224 DIODE 394

    BSM25GD120DLCE3224

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF BSM25GD120DLCE3224 BSM25GD120DLCE3224

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Eupec BSM25GD120DN2E3224

    Abstract: BSM50GD120DN2E3226 EUPEC BSM50G*120DN2 BSM400GA170DLS BSM25GD120DN2E BSM20GP60 BSM25GD120DN2E3224 2902 BSM10GP120 BSM35GD120DLCE3224
    Text: MARKETING NEWS Datum: 2001-01-19 Seite 1 von 1 Document No.: MN2001-02 Dear colleagues, please be notified that Toshiba has withdrawn some products. To offer the costumer an exactly technical alternative solution or an matchable technical alternative we built up the following checklist.


    Original     		PDF MN2001-02 MG15Q6ES50 BSM15GD120DN2E3224 MG15Q6ES50A BSM15GD120DN2 MG25Q6ES50 BSM25GD120DN2E3224 MG25Q6ES50A BSM25GD120DN2 MG50Q6ES50 Eupec BSM25GD120DN2E3224 BSM50GD120DN2E3226 EUPEC BSM50G*120DN2 BSM400GA170DLS BSM25GD120DN2E BSM20GP60 BSM25GD120DN2E3224 2902 BSM10GP120 BSM35GD120DLCE3224

    thyristor Q 720 To220

    Abstract: siemens bsm200ga120dn2 bup transistor BSM50GD120DN2 BSM15GD siemens igbt BSM100GB120DN2 BSM30GD60DN2 BSM25GD120DN2 BSM20GD60DN2
    Text: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Mario Feldvoss ● Sven Konrad ● Thomas Laska Second-generation IGBTs: The mighty midgets Contemporary power electronics applications call for smaller, lighter and more rugged components. They must also consume less energy, have a wider dynamic


    Original     		PDF

    FS20R06XE3

    Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
    Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors


    Original     		PDF D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd

    BSM25GD120DLC

    Abstract: E3224 SIGC42T120CL
    Text: Preliminary SIGC42T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC42T120CL VCE ICn 1200V 25A This chip is used for:


    Original     		PDF SIGC42T120CL BSM25GD120DLC E3224 C67078-A4675A003 7151-P, E3224 SIGC42T120CL

    bsm25gp120 b2

    Abstract: FF300R12KE3 BSM50GD120DN2E3226 FZ1600R12KF4 FZ1200R16KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3
    Text: IGBT High Power Modules 1200 VCES 1200 VCES Type * Dual modules IH1/4 IH7 Single modules Standard 2. Generation FF400R12KF4 FF600R12KF4 FF800R12KF4 Low Loss 2. Generation FF400R12KL4C FF600R12KL4C FF800R12KL4C IGBT3 ◆ FF600R12KE3 ◆ FF800R12KE3 ◆ FF1200R12KE3


    Original     		PDF FF400R12KF4 FF600R12KF4 FF800R12KF4 FF400R12KL4C FF600R12KL4C FF800R12KL4C FF600R12KE3 FF800R12KE3 FF1200R12KE3 FZ800R12KS4 bsm25gp120 b2 FF300R12KE3 BSM50GD120DN2E3226 FZ1600R12KF4 FZ1200R16KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3

    BSM25GD120DN2

    Abstract: GD120DN2 BSM25GD120DN
    Text: BSM 25 GD 120 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 25 GD 120 DN2 BSM 25 GD120DN2E3224 IC Package Ordering Code 1200V 35A ECONOPACK 2 C67076-A2505-A67


    Original     		PDF GD120DN2E3224 641-BSM25GD120DN2 BSM25GD120DN2 BSM25GD120DN2 GD120DN2 BSM25GD120DN

    bsm25gd12

    Abstract: A001 BSM25GD120DLC E3224 SIGC42T120CL infineon igbt die 1200V
    Text: Preliminary SIGC42T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type VCE ICn This chip is used for: • power module


    Original     		PDF SIGC42T120CL BSM25GD120DLC E3224 C67078-A4675sawn C67078-A4675unsawn 7151-P, bsm25gd12 A001 E3224 SIGC42T120CL infineon igbt die 1200V

    FS450R12KE3 S1

    Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
    Text: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.


    Original     		PDF E-103, FS450R12KE3 S1 infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120

    BSM25GP120 b2

    Abstract: BSM15GP120 b2 BSM50GD120DN2E3226 FS10R06VL4_B2 BSM35GP120 F4-150R12KS4 FS10R06VL4 BSM30GD60DLCE3224 FZ1200R16KF4 BSM15GD120DN2E3224
    Text: kuka-2003-inhalt.qxd 17.04.2003 10:33 Uhr Seite 7 EasyPIM 600 V-1200 V Type VCES V Low Loss 2. Generation ◆ FB6R06VL4 ◆ FB10R06VL4 FB10R06KL4 FB10R06KL4G FB10R06KL4G_B1 FP10R06KL4 FP10R06KL4_B3 FB15R06KL4 FB15R06KL4_B1 FP15R06KL4 FB20R06KL4 FB20R06KL4_B1


    Original     		PDF kuka-2003-inhalt FB6R06VL4 FB10R06VL4 FB10R06KL4 FB10R06KL4G FB10R06KL4G FP10R06KL4 FP10R06KL4 FB15R06KL4 FB15R06KL4 BSM25GP120 b2 BSM15GP120 b2 BSM50GD120DN2E3226 FS10R06VL4_B2 BSM35GP120 F4-150R12KS4 FS10R06VL4 BSM30GD60DLCE3224 FZ1200R16KF4 BSM15GD120DN2E3224

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC42T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type VCE ICn This chip is used for: • power module


    Original     		PDF SIGC42T120CL BSM25GD120DLC E3224 SIGC42T120CL C67078-A4675sawn C67078-A4675unsawn 7151-P,

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / eupec Technical Information BSM25GD120DLCE3224 lü B T - M o d u le s vorläufige Daten preliminary data H öchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties K o lle kto r-E m itte r-S p e rrs p a n n u n g


    OCR Scan     		PDF BSM25GD120DLCE3224 BSM25GD120DLC-E3224

    BSM25GD120D

    Abstract: No abstract text available
    Text: bGE » ûaaSbGS 0045032 47T « S I E G • SIEMENS SIEMENS AKTIENGESELLSCHAF - 9 7 BSM 25 GD 120 D IGBT Module Preliminary Data V CE = 1200 V / c = 6 x 35 A at Tc = 25 C I c = 6 x 25 A at Tc = 80 C • • • • • Power m odule 3-phase full bridge Including fast free-wheel diodes


    OCR Scan     		PDF C67076-A2505-A2 sii00219 sii00220 BSM25GD120D