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    BQ4013Y Price and Stock

    Texas Instruments BQ4013YMA-70

    IC NVSRAM 1MBIT PAR 32DIP MODULE
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    Texas Instruments BQ4013YMA-85

    IC NVSRAM 1MBIT PAR 32DIP MODULE
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    Rochester Electronics BQ4013YMA-85 7 1
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    Texas Instruments BQ4013YMA-120

    IC NVSRAM 1MBIT PAR 32DIP MODULE
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    Texas Instruments BQ4013YMA-85N

    IC NVSRAM 1MBIT PAR 32DIP MODULE
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    Rochester Electronics BQ4013YMA-85N 2 1
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    Texas Instruments BQ4013YMA-70N

    IC NVSRAM 1MBIT PAR 32DIP MODULE
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    Verical BQ4013YMA-70N 5,710 5,001
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    Arrow Electronics BQ4013YMA-70N 5,710 110 Weeks 1
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    BQ4013Y Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    bq4013/Y Texas Instruments 128K x 8 Nonvolatile SRAM Original PDF
    bq4013Y Texas Instruments 128K x 8 Nonvolatile SRAM Original PDF
    BQ4013Y-120 Benchmarq nvSRAM Original PDF
    BQ4013Y-70 Benchmarq nvSRAM Original PDF
    BQ4013Y-85 Benchmarq nvSRAM Original PDF
    BQ4013YMA-120 Texas Instruments BQ4013 - IC 128K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDMA32, ROHS COMPLIANT, PLASTIC, DIP-32, Static RAM Original PDF
    bq4013YMA-120 Texas Instruments 128k x 8 Nonvolatile SRAM Original PDF
    BQ4013YMA-120 Texas Instruments 128Kx8 Nonvolatile SRAM, 10% Voltage Tolerance 32-DIP MODULE 0 to 70 Original PDF
    BQ4013YMA-120 Texas Instruments 128K x 8 NONVOLATILE SRAM Original PDF
    BQ4013YMA-120N Texas Instruments BQ4013 - IC 128K X 8 NON-VOLATILE SRAM MODULE, 120 ns, DMA32, Static RAM Original PDF
    bq4013YMA-120N Texas Instruments 128k x 8 Nonvolatile SRAM Original PDF
    BQ4013YMA-70 Texas Instruments BQ4013 - IC 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDMA32, ROHS COMPLIANT, PLASTIC, DIP-32, Static RAM Original PDF
    bq4013YMA-70 Texas Instruments 128k x 8 Nonvolatile SRAM Original PDF
    BQ4013YMA-70 Texas Instruments 128K x 8 NONVOLATILE SRAM Original PDF
    BQ4013YMA-70 Texas Instruments 128Kx8 Nonvolatile SRAM, 10% Voltage Tolerance 32-DIP MODULE 0 to 70 Original PDF
    BQ4013YMA-70N Texas Instruments BQ4013 - IC 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDMA32, ROHS COMPLIANT, PLASTIC, DIP-32, Static RAM Original PDF
    bq4013YMA-70N Texas Instruments 128k x 8 Nonvolatile SRAM Original PDF
    BQ4013YMA-70N Texas Instruments 128Kx8 Nonvolatile SRAM, 10% Voltage Tolerance 32-DIP MODULE -40 to 85 Original PDF
    BQ4013YMA-70N Texas Instruments 128K x 8 NONVOLATILE SRAM Original PDF
    BQ4013YMA-8 Texas Instruments Original PDF

    BQ4013Y Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bq4013YMA-120N

    Abstract: bq4013 bq4013Y Benchmarq BENCHMARQ MICROELECTRONICS bq4013ma
    Text: bq4013/bq4013Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4013/bq4013Y 128Kx8 bq4013 576-bit 32-pin 10-year bq4013YMA-120N bq4013Y Benchmarq BENCHMARQ MICROELECTRONICS bq4013ma

    BQ4013Y

    Abstract: bq4013
    Text: bq4013/bq4013Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4013/bq4013Y 128Kx8 bq4013 576-bit 32-pin 10-year bq4013Y

    Untitled

    Abstract: No abstract text available
    Text: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    bq4013MA-120

    Abstract: bq4013Y bq4013YMA-120 bq4013
    Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4013/Y 128Kx8 576-bit 32-pin bq4013MA-120 bq4013Y bq4013YMA-120 bq4013

    TMS44C256

    Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
    Text: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore


    Original     		PDF 16Kbit 64Kbit 256Kbit 600mil) 300mil) TMS44C256 HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross

    ST L1117

    Abstract: ST MICROELECTRONICS L1117 33 LM7905 TO-92 ENE CP2211 CP2211 TL496 equivalent cp2206 MC34153 L7805 SOT 89 transistor L7905
    Text: Technology for Innovators TM Standard Linear Products Cross-Reference Including Amplifiers, Comparators, Timers, Peripheral Drivers, Power Management Controllers, References, Regulators, Supervisors, Shunts, Transmitters and Receivers INTERFACE COMPARATORS


    Original     		PDF A011905 ST L1117 ST MICROELECTRONICS L1117 33 LM7905 TO-92 ENE CP2211 CP2211 TL496 equivalent cp2206 MC34153 L7805 SOT 89 transistor L7905

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    TL3843 flyback schematic

    Abstract: ccfl inverter schematic tl494 uc3854 sepic uc3845 lead acid battery charger LM337 LM317 pwm schematic inverter uc3844 TL3845 dc dc applications power inverter schematic diagram uc3846 UC3843 application note buck laptop TL494 CCFL inverter SCHEMATIC
    Text: R E A L W O R L D S I G N A L P TM R O C E S S I N G Power Management Selection Guide 4Q 2004 TI Power Solutions: Power Behind Your Designs 2 ➔ Power Management Selection Guide Table of Contents Typical Power Applications 3 System Power and Plug-In Solutions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3


    Original     		PDF

    winbond 25080

    Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
    Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010


    Original     		PDF 2732B 27C100 27HB010 27C256 27HC64 27C128 27C040 7128A winbond 25080 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB

    bq4013

    Abstract: bq4013Y
    Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power ➤ Automatic write-protection during power-up/power-down cycles ➤ Conventional SRAM operation, including unlimited write cycles ➤ Internal isolation of battery before power application


    Original     		PDF bq4013/Y 128Kx8 32-pin 34-pin bq40MS) 576-bit bq4013 bq4013Y

    CCD 5pfm

    Abstract: UC3637 class D audio CCD linear array RL 1502 L Infrared Data Access flyback uc3843 tl431 18V 5A Voltage to Current Converter 4-20mA XTR110 A 457 20w RF Receiver TRANSMITTER PAIR LM1111 CDC2509 TL31161
    Text: Selection Guide NINTH EDITION Analog Master Selection Guide October 2003 1996, 1997, 1999, 2000, 2001, 2002, 2003 Texas Instruments Incorporated IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications,


    Original     		PDF

    bq4013

    Abstract: bq4013MA-120 bq4013Y bq4013YMA-120
    Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4013/Y 128Kx8 576-bit 32-pin bq4013 bq4013MA-120 bq4013Y bq4013YMA-120

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Untitled

    Abstract: No abstract text available
    Text: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The in teg ral control circuitry and lithium energy source provide reli­


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 bq4013 576-bit 32-pin 10-year

    BO42

    Abstract: No abstract text available
    Text: bq4013/bq4013Y BENCHMARQ h 128Kx8 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq40l3 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 bq40l3 576-bit bq4013 bq4013YMA-120N bq4013-70 bq4013Y-70 bq4013 BO42

    Untitled

    Abstract: No abstract text available
    Text: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features > Data retention in the absence of power >- Automatic write-protection during power-uj/power- down cycles >• Industry-standard 32-pin 128K x 8 pinout >- Conventional SRAM operation; unlimited write cycles


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 32-pin 10-year bq4013 576-bit bq4013YMA-120N bq4013

    bq4013ma

    Abstract: No abstract text available
    Text: bq4013/bq4013Y 128Kx8 Nonvolatile SRAM Features General Description > D ata retention in th e absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 32-pin 10-year bq4013 576-bit bq4013 bq4013ma

    Untitled

    Abstract: No abstract text available
    Text: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 bq4013 576-bit 32-pin bq4013YMA-120N bq4013-70 bq4013Y-70 bq4013

    Untitled

    Abstract: No abstract text available
    Text: bq4013/bq4013Y 128Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The in te g r a l co n tro l c irc u itry an d


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 bq4013 576-bit 32-pin 10-year bq4013YMA-120N bq4013

    Untitled

    Abstract: No abstract text available
    Text: b bq4013/bq4013Y BENCHMARQ. 128Kx8 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 b its. The i n t e g r a l c o n tr o l c ir c u it r y a n d


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 bq4013 576-bit

    Untitled

    Abstract: No abstract text available
    Text: BENCHMARQ_bq4013/bq4013Y 128Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The in te g r a l co n tro l c irc u itry a n d


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 32-pin 10-year bq4013 576-bit bq4013YMA-120N bq4013-70 bq4013Y-70 bq4013

    Untitled

    Abstract: No abstract text available
    Text: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 bq4013 576-bit bq4013YMA-120N bq4013-70 bq4013Y-70 bq4013