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    BQ4011 Price and Stock

    Rochester Electronics LLC BQ4011MA-150

    IC NVSRAM 256KBIT PARALLEL 28DIP
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    DigiKey BQ4011MA-150 Tube 16
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    Texas Instruments BQ4011MA-150

    IC NVSRAM 256KBIT PARALLEL 28DIP
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    DigiKey BQ4011MA-150 Tube
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    Verical BQ4011MA-150 385 16
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    BQ4011MA-150 280 16
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    BQ4011MA-150 98 16
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    Rochester Electronics BQ4011MA-150 763 1
    • 1 $19.01
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    • 100 $17.87
    • 1000 $16.16
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    Rochester Electronics LLC BQ4011MA-200

    IC NVSRAM 256KBIT PARALLEL 28DIP
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    DigiKey BQ4011MA-200 Tube 56
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    • 100 $5.41
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    Texas Instruments BQ4011MA-200

    IC NVSRAM 256KBIT PARALLEL 28DIP
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    DigiKey BQ4011MA-200 Tube 42
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    • 100 $12.99024
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    Rochester Electronics BQ4011MA-200 594 1
    • 1 $5.2
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    • 100 $4.89
    • 1000 $4.42
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    Texas Instruments BQ4011MA-100

    IC NVSRAM 256KBIT PARALLEL 28DIP
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    Find more BQ4011 price and stock on Findchips.com

    BQ4011 Datasheets (100)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    bq4011 Texas Instruments 32Kx8 Nonvolatile SRAM Original PDF
    BQ4011-100 Texas Instruments 32Kx8 Nonvolatile SRAM Original PDF
    BQ4011-150 Texas Instruments 32Kx8 Nonvolatile SRAM Original PDF
    BQ4011-200 Benchmarq nvSRAM Original PDF
    bq4011H-35 Texas Instruments IC NVRAM NVSRAM SERIAL 256KBIT 5V 28DIP Scan PDF
    bq4011H-45 Texas Instruments IC NVRAM NVSRAM SERIAL 256KBIT 5V 28DIP Scan PDF
    BQ4011HMA-20 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM, 20 ns, DMA28, Static RAM Original PDF
    BQ4011HMA-25 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM, 25 ns, DMA28, Static RAM Original PDF
    BQ4011HMA-35 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM, 35 ns, DMA28, Static RAM Original PDF
    BQ4011HMA-45 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM, 45 ns, DMA28, Static RAM Original PDF
    bq4011HY-45 Texas Instruments IC NVRAM NVSRAM SERIAL 256KBIT 5V 28DIP Scan PDF
    BQ4011HYMA-20 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM, 20 ns, DMA28, Static RAM Original PDF
    BQ4011HYMA-25 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM, 25 ns, DMA28, Static RAM Original PDF
    BQ4011HYMA-35 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM, 35 ns, DMA28, Static RAM Original PDF
    BQ4011HYMA-45 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM, 45 ns, DMA28, Static RAM Original PDF
    BQ4011LYMA-70N Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDMA28, ROHS COMPLIANT, PLASTIC, DIP-28, Static RAM Original PDF
    BQ4011LYMA-70N Texas Instruments 32Kx8 Nonvolatile SRAM, 3.3-V Input, 10% Voltage Tolerance 28-DIP MODULE -40 to 85 Original PDF
    BQ4011MA-100 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDMA28, ROHS COMPLIANT, PLASTIC, DIP-28, Static RAM Original PDF
    bq4011MA-100 Texas Instruments 32k x 8 Nonvolatile SRAM Original PDF
    bq4011MA-100 Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF

    BQ4011 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    bq4011

    Abstract: BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N benchmarq BQ4011YMA-70
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N benchmarq BQ4011YMA-70

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit

    benchmarq BQ4011YMA-70

    Abstract: bq4011 BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin benchmarq BQ4011YMA-70 BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N

    bq4011

    Abstract: bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 BQ4011YMA-100
    Text: bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit bq4011 bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 BQ4011YMA-100

    benchmarq BQ4011YMA-70

    Abstract: Benchmarq BQ4011MA-150
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit benchmarq BQ4011YMA-70 Benchmarq BQ4011MA-150

    32kx8 bit low power cmos sram

    Abstract: bq4011 bq4011Y
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin 10-year bq4011Y-70 bq4011Y 32kx8 bit low power cmos sram

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit

    bq4011

    Abstract: bq4011Y bq4011YMA-150N bq4011YMA-70N BENCHMARQ MICROELECTRONICS
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin bq4011Y bq4011YMA-150N bq4011YMA-70N BENCHMARQ MICROELECTRONICS

    Untitled

    Abstract: No abstract text available
    Text: bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit

    bq4011MA-150

    Abstract: bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 bq4011
    Text: bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 bq4011

    bq4011

    Abstract: bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 BQ4011YMA-70N
    Text: Not Recommended For New Designs bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit bq4011 bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 BQ4011YMA-70N

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin 10-year bq4011YMA-150N bq4011

    Untitled

    Abstract: No abstract text available
    Text: Advance Information Addendum b BENCHMARQ _ bq4011H/bq4011HY High-Speed 32Kx8 Nonvolatile SRAM Features General Description >• Acces^cycle tim es of 20 and 25 ns The CMOS bq4011H is a nonvolatile 2 6 2 ,1 4 4 -b it fa s t s ta tic RAM organized as 32,768 words by 8 bits.


    OCR Scan     		PDF bq4011H/bq4011HY 32Kx8 bq4011H 28-pin BO-41 bq4011H-20 bq4011H-25 bq4011HY

    bq4011

    Abstract: No abstract text available
    Text: BENCHMARÛ MICROELEC b 43E ]> 137001=1 0 0 0 0 5 7 0 1 IBEN bq4011H/bq4011HY BENCHMARQ 32Kx8 Nonvolatile Fast SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011H is a nonvolatile 262,144-bit fast static RAM organized as 32,768 words by 8 bits.


    OCR Scan     		PDF GD0DS70 bq4011 H/bq4011HY 32Kx8 28-pin 10-year bq4011H 144-bit A0-A14

    1993e

    Abstract: A14C bq4011 bq4011-100 bq4011-150
    Text: bq4011/foq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM General Description Features >- D ata retention in the absence of power ► Automatic write-protection during power-up/power-down cycles >• Industry-standard 28-pin 32K x 8 pinout >- Conventional SRAM operation;


    OCR Scan     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit condit11YMA-150N. bq4011-70 bq4011Y-70 bq4011YMA-70N 1993e A14C bq4011-100 bq4011-150

    Z7777

    Abstract: No abstract text available
    Text: bq4011/bq4011Y UNITRODE- 32Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF 28-pin 10-year bq4011/bq4011Y 32Kx8 bq4011 144-bit bq4011YMA-150N bq4011Y-70 bq4011YMA-70N Z7777

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011 Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4011/bq4011 32Kx8 bq4011 144-bit lit1YMA-150N. bq4011-70 bq4011Y-70 bq4011YMA-70N

    Untitled

    Abstract: No abstract text available
    Text: b bq 4011 /bq 4011 Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry an d lithium energy


    OCR Scan     		PDF 32Kx8 bq4011 144-bit bq4011/bq4011

    Untitled

    Abstract: No abstract text available
    Text: bq401 Q/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq401 Q/bq4010Y bq4011 144-bit 28-pin 10-year

    Untitled

    Abstract: No abstract text available
    Text: b q 4 0 1 1 H /b q 4 0 1 1 H Y BENCHMARQ 32Kx8 Nonvolatile Fast SRAM Features General Description Pin Connections Pin Names > Data retention in the absence of The CMOS bq4011H is a nonvolatile 262,144-bit fast static RAM power organized as 32,768 words by 8 bits.


    OCR Scan     		PDF 32Kx8 bq4011H 144-bit 28-pin

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit bq4011-70 bq4011Y-70 bq4011YMA-70N bq4011